600V Search Results

M16GZ47

Abstract: m16jz47 M16GZ47A SM16J 2428M SM16Z47A SM16JZ47A 16GZ47 16JZ47
Contextual Info: TOSHIBA SM16 GJ Z47 SM16(GJ)Z47A Triac U n it in m m Silicon Planar Type A C Power Control Applications F e a tu re s • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, O n-State Current ‘ ^T(RMS) = 1 6 A • High Com m utating (dv/dt) • Isolation Voltage

Contextual Info: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS

M25JZ51

Abstract: 25jz51 M25GZ51 25jz
Contextual Info: TOSHIBA SM25 GJ Z51 Triac Silicon Planar Type AC Power Control Applications F e a tu re s • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, On-State Current • 'k r m s j = 2 5 A • High Commutating - (dv/dt)c = 10V/jis • Isolation Voltage

M16JZ47

Abstract: M16GZ47 m16gz SM16J M16JZ47A
Contextual Info: I TRIAC SM16 G,J Z47 SM16(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage VuRif=400, 600V . R.M.S On-State Current It (RMS)=16A 0 3.2 ± 0 .2 1 0 .3 MAX . High Commutating (dv/dt) VlSOL=1500V AC . Isolation Voltage

M6JZ47

Abstract: M6GZ47 U5100 *M6JZ47 M6JZ u160d A0-125
Contextual Info: TRIAC SM6 G,J Z47 SM6(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage Vdrm*A00, 600V . R.M.S On-State Current I t Unit in mm 10.3 MAX (R M S)“ 6A & 32 ±0.2 . High Commutating (dv/dt) . Isolation Voltage v ISOL=1500V

TSS2G41

Abstract: TSS2D41S
Contextual Info: 9097250 TOSHIBA 39C <D I S C R E T E / O P T O > SSR ZERO-CROSS TYPE 02374 v D T 3 5 ^ / 3 TOSHIBA {DISCR E TE /O PTO } TSS2J41 " 600V 2A Unit in as MAXIMUM RATINGS ' CHARACTERISTIC TSS2D41S Repetitive Peat TSS2G41S Off-state Voltage TSS2H41S T S S 2J41S

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

SM8GZ46

Abstract: SM8DZ46 SM8JZ46 Bi-Directional Triode Thyristor SM8DZ
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8 D, G,J Z46 AC POWER C O N T R O L A P PL IC A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage v . R.M.S On-State Current JT(RMS)= 8A D R M = 200~- 600V . 4 Trigger Mode Guarantee

M12JZ47

Abstract: M12GZ47 M12j 2G74 M12JZ4 SM12G M12GZ SM12JZ47 SM12JZ47A
Contextual Info: SM12 G,J Z47 SM12(G,J)Z47A BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit . Repetitive Peak Off-State Voltage :V d RM=400, 600V . R.M.S On-State Current :I-p(r m s )= 1 2A in mm . High Commutating (dv/dt) . Isolation Voltage

Contextual Info: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS

Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current

M16JZ51

Abstract: m16gz51 SM16J M16G
Contextual Info: £ Ê S M 1 6 G Z 5 1 SILICON PLANAR TYPE g R / fl 6 J Z 5 1 AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage v DRIi“ 4 0 0 , 600V . R.M.S On-State Current lT RMS -16A . High Commutating (dv/dt)c

WO-61

Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO SSR (ZERO-CROSS TYPE) TOSHIBA {DISCRETE/OPTO} 1>FJ Í D ^ a S D □0DE37b ñ 600V 2A TSS2J44 Unit in na C H A R A C TER ISTIC SYMBOL a O T SS2G 44 T SS2H 44 T S S 2J44 RMS On-state Current P e ii O at C jd e S irfe O r i U t C t n o t IKa-Rcyctitrre}

TSZ1G43S

Contextual Info: 9 0 9 7 2 5 0 TOSHIBA { D I SC R E T E /O PT O 39C 02 380 SSR NON-ZERO-CROSS TYPE) d1 T | TOSHIBA O I S C R E T E / O P T O } TSZ1J43S Put 0k Cjcle S ir ji (V siife C m a l >N«rB«feUlmi 9 O. 9 g s st l— TCHTSSD T ~ 2 .$ - ) t 0002300 □ 600V 1A MAXIMUM RATINGS

12JZ47

Abstract: TM12G M12GZ47 M12JZ47 Z-47 m12jz47a ep 487
Contextual Info: TOSHIBA SM12 GJ Z47 SM12(GJ)Z47A Triac Unit in mm Silicon Planar Type AC Power Control Applications Features • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, O n-State Current • !t ( r m s ) = 1 2 A • High C om m utating (dv/dt) • Isolation Voltage

SM8G41

Abstract: SM8D41 SM8G4 SM8J41
Contextual Info: S M 8 D , G , BI-DIRECTIONAL TRIODE THYRISTOR 4 1 J SILICON PLANAR TYPE AC POWER CONTR O L A P P L I C A T I O N S . Unit in m m FEATURES: 1 0 .3 M AX . . Repetitive Peak Off-State Voltage : V q r h = 2 0 0 ~ 600V . R.M.S O n - S t a t e C u r r e n t : It (r m s )= 8A

Contextual Info: 10JL2CZ47 SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage 03.2±O.2 : V^juf=600V . Average Output Rectified Current : Io=10A

TRANSISTOR 0835

Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo

TSM2NB60

Abstract: mosfet 600V 2A
Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current

Contextual Info: 1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5JZ41, 1R5NZ41 General Purpose Rectifier Applications • Unit: mm Average Forward Current: IF AV = 1.5 A (Ta = 25°C) • Repetitive Peak Reverse Voltage: VRRM = 600V, 1000 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 100 A

k4a60db

Abstract: K4A60 K4A60D
Contextual Info: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)

M16GZ47

Abstract: m16jz47
Contextual Info: SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 16A