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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK4A60DB(STA4,Q,M)

    MOSFET N-CH 600V 3.7A TO220SIS
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    DigiKey TK4A60DB(STA4,Q,M) Tube
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    Toshiba America Electronic Components TK4A60DB(STA4,X,S)

    TK4A60DB - TRANSISTOR (SILICON)
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    Rochester Electronics TK4A60DB(STA4,X,S) 415,550 1
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    K4A60DB Datasheets Context Search

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    k4a60db

    Abstract: K4A60 K4A60D
    Contextual Info: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		TK4A60DB k4a60db K4A60 K4A60D PDF

    K4A60DB

    Abstract: K4A60 TK4A60DB K4A60D
    Contextual Info: K4A60DB 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60DB ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original     		TK4A60DB K4A60DB K4A60 TK4A60DB K4A60D PDF

    K4A60DB

    Abstract: TK4A60DB K4A60D k4a60
    Contextual Info: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		TK4A60DB K4A60DB TK4A60DB K4A60D k4a60 PDF

    k4a60db

    Contextual Info: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		TK4A60DB k4a60db PDF

    k4a60db

    Contextual Info: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		TK4A60DB k4a60db PDF