Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    30JL2C41 Search Results

    30JL2C41 Datasheets (5)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    30JL2C41
    Toshiba High efficiency diode stack for switching type power supply applications, converter and chopper applications Original PDF 190.49KB 3
    30JL2C41
    Toshiba Discrete IGBTs Original PDF 586.27KB 15
    30JL2C41
    Toshiba High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 50); I O (A): (max 600) Original PDF 122.69KB 4
    30JL2C41
    Toshiba High Efficiency Diode Stack (HED) Silicon Epitaxial Type Scan PDF 157.13KB 2
    30JL2C41(F)
    Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 600V 30A TO3PN Original PDF 4

    30JL2C41 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current


    OCR Scan
    30jl2c41961001eaa2 PDF

    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Average Output Rectified Current : VRRM = 600 V : IO = 30 A z Ultra Fast Reverse-Recovery Time


    Original
    30jl2c4112-16d1a PDF

    Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE B0JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SYMBOL Vr r m io If SM Tj Tstg RATING 600 30 150 (50Hz) 165 (60Hz) -4 0 -1 5 0


    OCR Scan
    30jl2c41b0jl2c41 PDF

    30JL2C

    Abstract: toshiba a10 30JL2C41
    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION ! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A


    Original
    30jl2c4130jl2ctoshiba a10 PDF

    30JL2C41

    Abstract: toshiba diode 1A 30jl2c
    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 30A Ultra Fast Reverse-Recovery Time


    Original
    30jl2c41toshiba diode 1a30jl2c PDF

    30JL2C41

    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A


    Original
    30jl2c41 PDF

    kone

    Abstract: 30JL2C41 OT63
    Contextual Info: TOSHIBA 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 M A X. V r r m = 600V • Repetitive Peak Reverse Voltage IO = 30A • Average Output Reeified Current


    OCR Scan
    30jl2c41961001eaa2koneot63 PDF

    30JL2C

    Abstract: 30JL2C41 VRRM 600 IO 20
    Contextual Info: 30JL2C41 東芝高効率高速整流スタック シリコンエピタキシャル接合形 30JL2C41 ○ スイッチング電源の高周波整流用 ○ コンバータチョッパの高周波整流用 z ピーク繰り返し逆電圧 : VRRM = 600V z 平均整流電流


    Original
    30jl2c4112-16d1a30jl2c20070701-ja+1vrrm 600 io 20 PDF

    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600 V : IO = 30 A Ultra Fast Reverse-Recovery Time


    Original
    30jl2c4112-16d1a PDF

    Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 30JL2C41 U nit in mm S W IT C H IN G T Y P E P O W E R SUPPLY A P P L IC A T IO N . C O N V E R T E R & C H O PPER A P P L IC A T IO N . • • • • Repetitive Peak Reverse Voltage : V r r ;m = 600V


    OCR Scan
    30jl2c41 PDF

    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 30A


    Original
    30jl2c4112-16d1a PDF

    30jl2c

    Contextual Info: 30JL2C41 TOSHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED 3fl I I IC SILICON EPITAXIAL TYPE 4 1 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 MAX. • • • 2 + 0.2 Vrrm = 600V Repetitive Peak Reverse Voltage Average Output Recifled Current


    OCR Scan
    30jl2c41961001eaa230jl2c PDF

    smd 1gw

    Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
    Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N


    OCR Scan
    do-15do-41do-201ads5277b+15s5566bs5688bu1bc441s1885a1r5bz41smd 1gwdiode z471zb361zb20 zeneru1dl491zb206b4b41fast recovery diode 200ns 2a1b4b41j2c42 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original
    scj0004ntpc6k01hmg01crg02+14crg07crg03cmg05cmg07cmg02crg01jdv2s71edf2s6.8ufs015az3.31ss421cmz24crs06df2s5.6scdf3s6.8ect PDF

    CMG07

    Abstract: 10lc48 CMG08 CMG03 CRH02 CRG01 CRG02 CRS14 CRS15 TPC6K01
    Contextual Info: 製品カタログ 2009-3 東芝半導体 製品カタログ ダイオード 中小型編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1. ダイオード体系図 . 3


    Original
    12-10c1a12-16d1a12-16e1abcj0001h+11bcj0001gcmg0710lc48cmg08cmg03crh02crg01crg02crs14crs15tpc6k01 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    tpc6k01hmg01crg02crg07+16crg03cmg05cmg02crg01crg04cmg06variable capacitance diodes1sv283b2fu smd transistorbidirectional zener diode015dz4015az15crs06smd diode lz zenergeneral purpose zener diode 256cmz24 PDF

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original
    gt50j101gt50t101mosfet 500v 50agt60m102+6s5j53gt60j101gt15q101 equivalentgt60m101s5783f500v n-channel igbt to-3p PDF

    1ZB36

    Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
    Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47


    OCR Scan
    15j4b42160g2g43160l2g43160q2g43+16160u2g43160dl2c41a16fl2c41a16dl2cz47a16fl2cz47a1b4b411zb362z471j4b411b4b42100l6p431z166g4b413z15030l6p4510gl2cz PDF

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Contextual Info: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original
    tlcs-870/c1sce0013be-28831sce0013c+10tb6584tk8a50d equivalentcircuit diagram of luminous invertercircuit diagram of toshiba washing machinegt35j321gt50n322full automatic washing machines microcontrollertb6574samsung washing machine circuit diagramwashing machine control panel circuit diagram PDF

    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


    Original
    bce0001abce0001bzener diode 1nu 9fdiode 1nu+8dla diode toshibadiode 1nu 7.1nh5 diodeschottky diode to220 15a 1000vdiode 1nu 5.1diode 1nu 6f10lc48gu 1r5 PDF

    cmg07

    Abstract: CRS15 5DL2CZ 10lc48 CMS19 CMZ24 CUS01 rf semiconductors CRH02 5DL2CZ transistor
    Contextual Info: 2009-9 PRODUCT GUIDE Small and Medium Diodes SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng ▲ Diode Product Tree Rectifier Diodes General-Purpose Rectifiers High-Speed Rectifiers Super-Fast Recovery Diodes High-Efficiency Diodes Schottky Barrier Diodes


    Original
    bce0001gcmg07crs155dl2cz+710lc48cms19cmz24cus01rf semiconductorscrh025dl2cz transistor PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    sce0004itpc6k01hmg01crg02+15crg07crg03cmg05cmg07cmg02crg01cmg031ss3912fu smd transistordf2s6.8stoshiba diode catalogdsr520cttoshiba semiconductor general catalogcmf05crs01 PDF

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    tpc6k01hmg01crg02crg07+16crg03cmg02o-220smcrg01crg04cmg032fu smd transistor2fk transistor3fv 60 43smd diode lz zenerhn2s02jecmz24crs01df2s6.2s1sv1011sv283b PDF

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original
    scj0004otpc6k01hmg01crg02+13crg07crg03crg09cmg05cmg07cmg02df2s3.6sccrh021ss416ctcms19cmz24hn2d01jejdv2s10fs PDF