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SPA11 Datasheets (25)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPA-1118	RF Micro Devices	RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC	Original	PDF		6
SPA-1118	Sirenza Microdevices	850 MHz 1 Watt Power Amp with Active Bias	Original	PDF	209.54KB	5
SPA-1118	Sirenza Microdevices	850 MHz 1 Watt Power Amplifier with Active Bias	Original	PDF	108.3KB	5
SPA-1118	Stanford Microdevices	850 MHz 1 watt power amplifier with active bias.	Original	PDF	253.83KB	6
SPA-1118Z	RF Micro Devices	RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC	Original	PDF		6
SPA-1118Z	Sirenza Microdevices	850 MHz 1 Watt Power Amplifier with Active Bias	Original	PDF	108.31KB	5
SPA11N60C2	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A	Original	PDF	133.82KB	12
SPA11N60C2	Infineon Technologies	Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced	Original	PDF	161.93KB	14
SPA11N60C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 600.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25Â°C V_GS=10: 380.0 mOhm; I_D(max) @ T_C=25Â°C: 11.0 A; I_Dpuls (max): 33.0 A;	Original	PDF	664.86KB	16
SPA11N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced	Original	PDF	357.21KB	14
SPA11N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A	Original	PDF	136.67KB	12
SPA11N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	156.67KB	15
SPA11N60C3E8152	Infineon Technologies	Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R	Original	PDF	238.33KB	9
SPA11N60C3IN	Infineon Technologies	MOSFET N-CH 650V 11A TO220-3-31	Original	PDF	669.7KB

SPA11N60C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3	Original	PDF	654.09KB
SPA11N60CFD	Infineon Technologies	CoolMOS Power Transistor	Original	PDF	264.55KB	12
SPA11N60CFDXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3	Original	PDF	557.82KB
SPA11N65C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 650.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25Â°C V_GS=10: 380.0 mOhm; I_D(max) @ T_C=25Â°C: 11.0 A; I_Dpuls (max): 33.0 A;	Original	PDF	578.2KB	15
SPA11N65C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	285.4KB	14
SPA11N65C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220	Original	PDF	569.6KB

SPA11 Price and Stock

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Infineon Technologies AG SPA11N80C3XKSA1 Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA11N80C3XKSA1		12,150		6	1 - 10 $1.55 100 $1.43 1000 $1.14 10000 $1.14	Buy Now
Avnet Americas	SPA11N80C3XKSA1	Bulk			1	1 $3.60 10 $2.34 100 $1.63 1000 $1.30 10000 $1.25	Get Quote
Mouser Electronics	SPA11N80C3XKSA1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Arrow Electronics	SPA11N80C3XKSA1		12,150	17 Weeks	1	1 $2.43 10 $1.55 100 $1.43 1000 $1.14 10000 $1.14	Buy Now
Newark	SPA11N80C3XKSA1	Bulk	533		1	1 $3.60 10 $2.34 100 $1.63 1000 $1.30 10000 $1.25	Buy Now

TME	SPA11N80C3XKSA1				50	1 - 10 - 100 $1.33 1000 $1.33 10000 $1.33	Get Quote
EBV Elektronik	SPA11N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPA11N80C3XKSA1		2,913			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N60C3XKSA1 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA11N60C3XKSA1		500		500	1 - 10 - 100 - 1000 $1.43 10000 $1.43	Buy Now
Avnet Americas	SPA11N60C3XKSA1	Tube			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Arrow Electronics	SPA11N60C3XKSA1		500	52 Weeks	500	1 - 10 - 100 - 1000 $1.43 10000 $1.43	Buy Now
Newark	SPA11N60C3XKSA1	Bulk	34		1	1 $3.73 10 $2.72 100 $1.71 1000 $1.49 10000 $1.43	Buy Now
TME	SPA11N60C3XKSA1				500	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Get Quote

EBV Elektronik	SPA11N60C3XKSA1			44 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPA11N60C3XKSA1		4,185			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N60CFDXKSA1 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA11N60CFDXKSA1		500		1	1 $2.96 10 $2.96 100 $2.96 1000 $2.96 10000 $2.96	Buy Now
Avnet Americas	SPA11N60CFDXKSA1	Tube		17 Weeks	500	1 - 10 - 100 - 1000 $1.45 10000 $1.35	Buy Now
Arrow Electronics	SPA11N60CFDXKSA1		500	17 Weeks	1	1 $2.96 10 $2.96 100 $2.96 1000 $2.96 10000 $2.96	Buy Now
TME	SPA11N60CFDXKSA1				500	1 - 10 - 100 - 1000 $1.61 10000 $1.61	Get Quote
Vyrian	SPA11N60CFDXKSA1		11,508			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N80C3E8115XKSA1 SPA11N80C3E8115XKSA1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA11N80C3E8115XKSA1		258		226	1 - 10 - 100 - 1000 $1.49 10000 $1.40	Buy Now
Rochester Electronics	SPA11N80C3E8115XKSA1		258		1	1 - 10 - 100 $1.33 1000 $1.19 10000 $1.12	Buy Now
Fairview Microwave Inc SPA-110-30-04-SMA High Power Amplifier at 4 Watt P1dBOperating From 8.5 GHz to 11 GHz with 30 dB Gain, 45 dBm IP3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA-110-30-04-SMA		1		1	1 $3310.00 10 $3045.20 100 $2780.40 1000 $2648.00 10000 $2648.00	Buy Now
Mouser Electronics	SPA-110-30-04-SMA					1 $2710.13 10 $2710.13 100 $2710.13 1000 $2710.13 10000 $2710.13	Get Quote
Newark	SPA-110-30-04-SMA	Bulk	1		1	1 $2683.42 10 $2683.42 100 $2683.42 1000 $2683.42 10000 $2683.42	Buy Now
Onlinecomponents.com	SPA-110-30-04-SMA					1 $2793.69 10 $2614.61 100 $2614.61 1000 $2614.61 10000 $2614.61	Buy Now

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SPA11 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +10p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 11n60c3 transistor 11n60c3 11n60c 11n60 q67040-s4395 q67040-s4396	PDF
Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic	Original	spa1118z 850mhz mch18 100nh +11008hq	PDF
SPA11N60C2 Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 Contextual Info: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated	Original	spa11n60c2 p-to220-3-31 q67040-s4332 11n60c2 +4an-to220-3-31-01 11n60c gpt09301 sdp06s60	PDF
11n80c3 Abstract: SPA11N80C3 Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 pg-to220-3-31 pg-to220 +4p-to220-3-31 pg-to-220-3-31 q67040-s4438 11n80c3	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +8p-to220-3-31 pg-to220fp pg-to262 pg-to220 pg-to-220-3-31 11n60c3 transistor 11n60c3 spa11n60c3e8185	PDF
SPA11N80C3 Contextual Info: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	spa11n80c3 p-to220-3-31 11n80c3 q67040-s4439	PDF
11n80c3 Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220-3 11n80c3	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +12pg-to220fp pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 11n60c3 11n60c spa11n60c3 equivalent spa11n60c3e8185 11n60 spd06s60 transistor 11n60c3	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +12pg-to220fp pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 11n60c3 spa11n60c3e8185 11n60c spa11n60c3 equivalent 11n60 transistor 11n60c3 q67040-s4395	PDF
11n60cfd Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172 Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	spa11n60cfd pg-to220-3-31 o-220-3-31 sp000216317 +311n60cfd jesd22 d8172	PDF
11N80C3 Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4438 11n80c3	PDF
11N65C3 Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6 Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated	Original	spp11n65c3 spa11n65c3 spi11n65c3 pg-to262 +10pg-to220fp pg-to220 q67040-s4557 11n65c3 11n65c 11n65 transistor smd marking code transistor smd marking code 7a sp000216318 11n6	PDF
11N65C3 Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated	Original	spp11n65c3 spa11n65c3 spi11n65c3 pg-to262 +4pg-to220fp pg-to220 q67040-s4557 11n65c3	PDF
11N60C Abstract: 11N60CFD Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	spa11n60cfd pg-to220-3-31 o-220-3-31 sp000216317 +211n60cfd 11n60c	PDF

Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +4p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1	PDF
11N65C3 Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3 Contextual Info: SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated	Original	spp11n65c3 spa11n65c3 spi11n65c3 p-to262-3-1 +11p-to220-3-31 p-to220-3-1 q67040-s4557 11n65c3 11n65 11n65c q67040-s4554 mil-std-750-1038 q67040-s4561 an-to220-3-31-01 transistor smd marking code 7a	PDF
Q67040-S4408 Abstract: 11N60C AR1010 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	spa11n60c3 p-to220-3-31 11n60c3 q67040-s4408 +211n60c ar1010	PDF
11n60c2 Abstract: transistor 11n60c2 spa 11n60c2 Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated	Original	spp11n60c2 spb11n60c2 spa11n60c2 p-to220-3-31 +5p-to263-3-2 p-to220-3-1 11n60c2 transistor 11n60c2 spa 11n60c2	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +7p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 p-to-220-3-31 11n60c3 transistor 11n60c3	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +6p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 11n60c3 transistor 11n60c3	PDF
11N80C3 Abstract: 11n80c Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to-220-3-31 +4p-to220-3-1 q67040-s4438 11n80c3 11n80c	PDF
SP000216312 Abstract: 11N6 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	spp11n60c3 spi11n60c3 spa11n60c3 p-to220-3-31 +6pg-to220-3-31 pg-to262-3 pg-to220 pg-to-220-3-31 sp000216312 11n6	PDF
transistor 11n60c3 Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	spp11n60c3 spi11n60c3 spa11n60c3 p-to220-3-31 +8pg-to220-3-31 pg-to262-3-1 pg-to220-3-1 pg-to-220-3-31 transistor 11n60c3 q67040-s4408 11n60c3 11n60c	PDF
11n80c3 Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220-3 11n80c3	PDF

SPA11 Search Results

SPA11 Datasheets (25)

SPA11 Price and Stock

Infineon Technologies AG SPA11N80C3XKSA1

Infineon Technologies AG SPA11N60C3XKSA1

Infineon Technologies AG SPA11N60CFDXKSA1

Infineon Technologies AG SPA11N80C3E8115XKSA1

Fairview Microwave Inc SPA-110-30-04-SMA

SPA11 Datasheets Context Search

11N60C3

SPA11N60C2

11n80c3

11n60c3

SPA11N80C3

11n80c3

11n60c3

11n60c3

11n60cfd

11N80C3

11N65C3

11N65C3

11N60C

11N65C3

Q67040-S4408

11n60c2

11N60C3

11N60C3

11N80C3

SP000216312

transistor 11n60c3

11n80c3