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Infineon Technologies AG


Infineon Technologies AG SPW11N80C3FKSA1 Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole - Rail/Tube (Alt: SPW11N80C3FKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPW11N80C3FKSA1	Tube	134		30	1 - 10 - 100 $1.36 1000 $1.27 10000 $1.27	Buy Now
Newark ()	SPW11N80C3FKSA1	Bulk	84		1	1 $4.35 10 $3.70 100 $2.16 1000 $1.93 10000 $1.93	Buy Now
	SPW11N80C3FKSA1	Bulk			30	1 - 10 - 100 $2.31 1000 $1.89 10000 $1.85	Buy Now
Rochester Electronics	SPW11N80C3FKSA1		14,474		1	1 - 10 - 100 $1.39 1000 $1.24 10000 $1.17	Buy Now
TME	SPW11N80C3FKSA1				30	1 - 10 - 100 $1.80 1000 $1.61 10000 $1.61	Get Quote
Rutronik	SPW11N80C3FKSA1	Tube	3,150		240	1 - 10 - 100 - 1000 $1.50 10000 $1.31	Buy Now

EBV Elektronik	SPW11N80C3FKSA1		720	9 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA11N80C3XKSA1 - Bulk (Alt: 98K0552)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPA11N80C3XKSA1	Bulk			1	1 $3.60 10 $2.34 100 $1.63 1000 $1.30 10000 $1.25	Get Quote
	SPA11N80C3XKSA1	Tube		13 Weeks	500	1 - 10 - 100 - 1000 $1.12 10000 $1.08	Buy Now
Newark	SPA11N80C3XKSA1	Bulk	533		1	1 $3.60 10 $2.34 100 $1.63 1000 $1.30 10000 $1.25	Buy Now
TME	SPA11N80C3XKSA1				50	1 - 10 - 100 $1.33 1000 $1.33 10000 $1.33	Get Quote
Rutronik	SPA11N80C3XKSA1	Tube	900		500	1 - 10 - 100 - 1000 $1.35 10000 $1.10	Buy Now
EBV Elektronik	SPA11N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	SPA11N80C3XKSA1		2,913			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP11N80C3XKSA1 - Bulk (Alt: 47Y8131)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPP11N80C3XKSA1	Bulk			1	1 $4.05 10 $2.38 100 $1.89 1000 $1.49 10000 $1.43	Get Quote
	SPP11N80C3XKSA1	Tube		20 Weeks	50	1 - 10 - 100 $1.24 1000 $0.97 10000 $0.97	Buy Now
Newark	SPP11N80C3XKSA1	Bulk	340		1	1 $4.05 10 $2.38 100 $1.89 1000 $1.49 10000 $1.43	Buy Now
Bristol Electronics	SPP11N80C3XKSA1		150		1	1 $2.83 10 $2.12 100 $1.75 1000 $1.41 10000 $1.41	Buy Now
TME	SPP11N80C3XKSA1				50	1 - 10 - 100 $1.57 1000 $1.17 10000 $1.17	Get Quote
Rutronik	SPP11N80C3XKSA1	Tube	100		50	1 - 10 - 100 $1.27 1000 $0.98 10000 $0.98	Buy Now

EBV Elektronik	SPP11N80C3XKSA1			41 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N80C3XKSA2 Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole - Rail/Tube (Alt: SPA11N80C3XKSA2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPA11N80C3XKSA2	Tube		52 Weeks	500	1 - 10 - 100 - 1000 $1.12 10000 $1.07	Buy Now
Newark	SPA11N80C3XKSA2	Bulk	265		1	1 $4.05 10 $2.79 100 $2.08 1000 $1.74 10000 $1.67	Buy Now
Rochester Electronics	SPA11N80C3XKSA2		28		1	1 - 10 - 100 $1.45 1000 $1.20 10000 $1.07	Buy Now
TME	SPA11N80C3XKSA2				500	1 - 10 - 100 - 1000 $1.11 10000 $1.11	Get Quote
Rutronik	SPA11N80C3XKSA2	Tube	500		500	1 - 10 - 100 - 1000 $1.35 10000 $1.10	Buy Now

EBV Elektronik	SPA11N80C3XKSA2		1,000	53 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPA11N80C3XKSA2		13,387			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N80C3 Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPA11N80C3		2,686			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	SPA11N80C3		332		1	1 $3.13 10 $2.16 100 $2.16 1000 $2.16 10000 $2.16	Buy Now
Chip 1 Exchange	SPA11N80C3		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	SPA11N80C3		28			1 $3.08 10 $3.08 100 $2.31 1000 $2.00 10000 $2.00	Buy Now

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11N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3 +311n80c 80011a 11n80	PDF
11n80c3 Abstract: SPA11N80C3 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 pg-to220-3-31 pg-to220 +4p-to220-3-31 pg-to-220-3-31 q67040-s4438 11n80c3	PDF
SPA11N80C3 Contextual Info: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	spa11n80c3 p-to220-3-31 11n80c3 q67040-s4439	PDF
11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220-3 11n80c3	PDF
11N80C3 Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4438 11n80c3	PDF
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spw11n80c3 pg-to247-3 11n80c3 mosfet 11n80c3 +4mosfet 11n80c3 data sheet jesd22 11n80c 1815r	PDF
MOSFET 11N80c3 Abstract: 11N80 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220-3 11n80c3 mosfet 11n80c3 +111n80	PDF
Contextual Info: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3	PDF
11N80C3 Abstract: 11n80c Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to-220-3-31 +4p-to220-3-1 q67040-s4438 11n80c3 11n80c	PDF
Q67040-S4440 Abstract: 11N80C3 11N8 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3 +111n8	PDF
11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220-3 11n80c3	PDF
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to220-3-1 +5p-to-220-3-31 q67040-s4438 11n80c3 80011a 11n80c	PDF
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spw11n80c3 pg-to247-3 11n80c3 009-134-a +9o-247 mosfet 11n80c3 mosfet 11n80c3 data sheet 11n80c 11n80 jesd22 pg-to247 11n8 pg-to-247-3	PDF
11N80C3 Contextual Info: 11N80C3 11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp11n80c3 spa11n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4438 11n80c3	PDF

Q67040-S4439 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 p-to220-3-31 pg-to220-3-31 +4pg-to220-3-1 pg-to-220-3-31 11n80c3 q67040-s4439	PDF
MOSFET 11N80c3 Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa11n80c3 pg-to220fp 11n80c3 mosfet 11n80c3 +411n80 11n80c mosfet 11n80c3 data sheet jesd22	PDF
MOSFET 11N80c3 Abstract: 11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spw11n80c3 pg-to247-3 11n80c3 mosfet 11n80c3	PDF
11n80c Abstract: 11N80C3 SPP11N80C3 max8210 Contextual Info: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	spp11n80c3 p-to220-3-1 q67040-s4438 11n80c3 +211n80c max8210	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
11N80C3 Abstract: SPW11N80C3 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3	PDF
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 pg-to220-3-31 pg-to220 +8p-to220-3-31 pg-to-220-3-31 q67040-s4438 11n80c3 11n80 spp11n80 11n80c3 equivalent to220 heatsink datasheet	PDF
MOSFET 11N80c3 Abstract: 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp11n80c3 pg-to220-3 11n80c3 mosfet 11n80c3 +311n80c 11n80 jesd22	PDF
11N80C3 Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp11n80c3 spa11n80c3 p-to220-3-31 pg-to220-3-31 +5pg-to220-3-1 pg-to-220-3-31 11n80c3 11n80c 3c100	PDF

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11N80C Price and Stock

Infineon Technologies AG SPW11N80C3FKSA1

Infineon Technologies AG SPA11N80C3XKSA1

Infineon Technologies AG SPP11N80C3XKSA1

Infineon Technologies AG SPA11N80C3XKSA2

Infineon Technologies AG SPA11N80C3

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Q67040-S4440

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11n80c3

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Q67040-S4439

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