11N80C Search Results
11N80C Price and Stock
Infineon Technologies AG SPW11N80C3FKSA1Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole - Rail/Tube (Alt: SPW11N80C3FKSA1) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SPW11N80C3FKSA1 | Tube | 134 | 30 |
|
Buy Now | |||||
|
SPW11N80C3FKSA1 | 180 |
|
Buy Now | |||||||
|
SPW11N80C3FKSA1 | Bulk | 84 | 1 |
|
Buy Now | |||||
| SPW11N80C3FKSA1 | Bulk | 30 |
|
Buy Now | |||||||
|
SPW11N80C3FKSA1 | 14,474 | 1 |
|
Buy Now | ||||||
|
SPW11N80C3FKSA1 | 30 |
|
Get Quote | |||||||
|
SPW11N80C3FKSA1 | Tube | 3,150 | 240 |
|
Buy Now | |||||
|
SPW11N80C3FKSA1 | 720 | 9 Weeks | 240 |
|
Buy Now | |||||
Infineon Technologies AG SPA11N80C3XKSA1- Bulk (Alt: 98K0552) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SPA11N80C3XKSA1 | Bulk | 1 |
|
Get Quote | ||||||
| SPA11N80C3XKSA1 | Tube | 13 Weeks | 500 |
|
Buy Now | ||||||
|
SPA11N80C3XKSA1 |
|
Get Quote | ||||||||
|
SPA11N80C3XKSA1 | Bulk | 533 | 1 |
|
Buy Now | |||||
|
SPA11N80C3XKSA1 | 50 |
|
Get Quote | |||||||
|
SPA11N80C3XKSA1 | Tube | 900 | 500 |
|
Buy Now | |||||
|
SPA11N80C3XKSA1 | 16 Weeks | 500 |
|
Get Quote | ||||||
|
SPA11N80C3XKSA1 | 2,913 |
|
Get Quote | |||||||
Infineon Technologies AG SPP11N80C3XKSA1- Bulk (Alt: 47Y8131) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SPP11N80C3XKSA1 | Bulk | 1 |
|
Get Quote | ||||||
| SPP11N80C3XKSA1 | Tube | 20 Weeks | 50 |
|
Buy Now | ||||||
|
SPP11N80C3XKSA1 | 4 |
|
Buy Now | |||||||
|
SPP11N80C3XKSA1 | Bulk | 340 | 1 |
|
Buy Now | |||||
|
SPP11N80C3XKSA1 | 150 | 1 |
|
Buy Now | ||||||
|
SPP11N80C3XKSA1 | 50 |
|
Get Quote | |||||||
|
SPP11N80C3XKSA1 | Tube | 100 | 50 |
|
Buy Now | |||||
|
SPP11N80C3XKSA1 | 41 Weeks | 500 |
|
Get Quote | ||||||
Infineon Technologies AG SPA11N80C3XKSA2Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole - Rail/Tube (Alt: SPA11N80C3XKSA2) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SPA11N80C3XKSA2 | Tube | 52 Weeks | 500 |
|
Buy Now | |||||
|
SPA11N80C3XKSA2 | 304 |
|
Buy Now | |||||||
|
SPA11N80C3XKSA2 | Bulk | 265 | 1 |
|
Buy Now | |||||
|
SPA11N80C3XKSA2 | 28 | 1 |
|
Buy Now | ||||||
|
SPA11N80C3XKSA2 | 500 |
|
Get Quote | |||||||
|
SPA11N80C3XKSA2 | Tube | 500 | 500 |
|
Buy Now | |||||
|
SPA11N80C3XKSA2 | 1,000 | 53 Weeks | 500 |
|
Buy Now | |||||
|
SPA11N80C3XKSA2 | 13,387 |
|
Get Quote | |||||||
Infineon Technologies AG SPA11N80C3MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SPA11N80C3 | 698 |
|
Buy Now | |||||||
|
SPA11N80C3 | 2,686 |
|
Get Quote | |||||||
|
SPA11N80C3 | 332 | 1 |
|
Buy Now | ||||||
|
SPA11N80C3 | 1 |
|
Get Quote | |||||||
|
SPA11N80C3 | 28 |
|
Buy Now | |||||||
11N80C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
11n80c3
Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
|
Original |
spw11n80c3p-to247q67040-s444011n80c3+3 | |
11n80c3
Abstract: SPA11N80C3
|
Original |
spp11n80c3spa11n80c3pg-to220-3-31pg-to220+4 | |
SPA11N80C3Contextual Info: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated |
Original |
spa11n80c3p-to220-3-3111n80c3q67040-s4439 | |
11n80c3Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications |
Original |
spa11n80c3pg-to220-311n80c3 | |
11N80C3Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31 |
Original |
spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+2 | |
MOSFET 11N80c3
Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R
|
Original |
spw11n80c3pg-to247-311n80c3mosfet 11n80c3+4 | |
MOSFET 11N80c3
Abstract: 11N80
|
Original |
spa11n80c3pg-to220-311n80c3mosfet 11n80c3+1 | |
|
Contextual Info: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package |
Original |
spw11n80c3p-to247q67040-s444011n80c3 | |
11N80C3
Abstract: 11n80c
|
Original |
spp11n80c3spa11n80c3p-to220-3-31p-to-220-3-31+4 | |
Q67040-S4440
Abstract: 11N80C3 11N8
|
Original |
spw11n80c3p-to247q67040-s444011n80c3+1 | |
11n80c3Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications |
Original |
spa11n80c3pg-to220-311n80c3 | |
11n80c3
Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c
|
Original |
spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+5 | |
MOSFET 11N80c3
Abstract: MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3
|
Original |
spw11n80c3pg-to247-311n80c3009-134-a+9 | |
11N80C3Contextual Info: 11N80C3 11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31 |
Original |
spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+2 | |
|
|
|||
Q67040-S4439Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances |
Original |
spp11n80c3spa11n80c3p-to220-3-31pg-to220-3-31+4 | |
MOSFET 11N80c3
Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
|
Original |
spa11n80c3pg-to220fp11n80c3mosfet 11n80c3+4 | |
MOSFET 11N80c3
Abstract: 11n80c3
|
Original |
spw11n80c3pg-to247-311n80c3mosfet 11n80c3 | |
11n80c
Abstract: 11N80C3 SPP11N80C3 max8210
|
Original |
spp11n80c3p-to220-3-1q67040-s443811n80c3+2 | |
PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
|
Original |
b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13 | |
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
|
Original |
b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10 | |
11N80C3
Abstract: SPW11N80C3
|
Original |
spw11n80c3p-to247q67040-s444011n80c3 | |
11n80c3
Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31
|
Original |
spp11n80c3spa11n80c3pg-to220-3-31pg-to220+8 | |
MOSFET 11N80c3
Abstract: 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3
|
Original |
spp11n80c3pg-to220-311n80c3mosfet 11n80c3+3 | |
11N80C3
Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3
|
Original |
spp11n80c3spa11n80c3p-to220-3-31pg-to220-3-31+5 | |