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Infineon Technologies AG


Infineon Technologies AG SPP11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N80C3XKSA1	Tube	2,599		1	1 $3.06 10 $3.06 100 $1.61 1000 $1.21 10000 $1.18	Buy Now
Avnet Americas ()	SPP11N80C3XKSA1	Bulk			1	1 $2.96 10 $2.49 100 $2.01 1000 $1.53 10000 $1.53	Buy Now
	SPP11N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.86 10000 $0.82	Buy Now
Mouser Electronics	SPP11N80C3XKSA1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	SPP11N80C3XKSA1	Bulk	137		1	1 $1.80 10 $1.80 100 $1.52 1000 $1.25 10000 $1.25	Buy Now
Bristol Electronics	SPP11N80C3XKSA1		150		2	1 - 10 $2.12 100 $1.06 1000 $1.06 10000 $1.06	Buy Now

Rochester Electronics	SPP11N80C3XKSA1		2,064		1	1 - 10 - 100 $1.52 1000 $1.36 10000 $1.28	Buy Now
Rutronik	SPP11N80C3XKSA1	Tube	500		50	1 - 10 - 100 $1.32 1000 $1.01 10000 $1.01	Buy Now
Chip One Stop	SPP11N80C3XKSA1	Tube	766	0 Weeks, 1 Days	1	1 $2.95 10 $2.32 100 $1.58 1000 $1.27 10000 $1.12	Buy Now
Chip Stock	SPP11N80C3XKSA1		14,152			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPP11N80C3XKSA1		500	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SPP11N80C3XKSA1		1,000		50	1 - 10 - 100 $1.37 1000 $1.29 10000 $1.24	Buy Now
Vyrian	SPP11N80C3XKSA1		687			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP11N80C3XKSA1		9,460			1 - 10 - 100 $2.05 1000 $1.72 10000 $1.72	Buy Now
Infineon Technologies AG SPA11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA11N80C3XKSA1	Tube	2,211		1	1 $3.35 10 $3.35 100 $1.54 1000 $1.17 10000 $1.13	Buy Now
Avnet Americas ()	SPA11N80C3XKSA1	Bulk			1	1 $3.29 10 $3.10 100 $1.68 1000 $1.39 10000 $1.39	Buy Now
	SPA11N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.99 10000 $0.94	Buy Now
Mouser Electronics	SPA11N80C3XKSA1		185			1 $3.28 10 $3.10 100 $1.55 1000 $1.12 10000 $1.12	Buy Now
Newark	SPA11N80C3XKSA1	Bulk	492		1	1 $1.12 10 $1.12 100 $1.12 1000 $1.12 10000 $1.12	Buy Now
Rutronik	SPA11N80C3XKSA1	Tube	900		50	1 - 10 - 100 $1.50 1000 $1.16 10000 $1.16	Buy Now

Chip Stock	SPA11N80C3XKSA1		16,100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPA11N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPA11N80C3XKSA1		787			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA11N80C3XKSA1		12,400			1 - 10 - 100 $1.81 1000 $1.52 10000 $1.52	Buy Now
Infineon Technologies AG SPW11N80C3FKSA1 MOSFET N-CH 800V 11A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW11N80C3FKSA1	Tube	455		1	1 $3.84 10 $3.84 100 $1.75 1000 $1.40 10000 $1.33	Buy Now
Avnet Americas	SPW11N80C3FKSA1	Tube	178	15 Weeks	30	1 - 10 - 100 $1.25 1000 $1.13 10000 $1.13	Buy Now
Mouser Electronics	SPW11N80C3FKSA1		237			1 $3.84 10 $3.81 100 $1.69 1000 $1.34 10000 $1.33	Buy Now
Newark ()	SPW11N80C3FKSA1	Bulk	607		1	1 $3.84 10 $3.81 100 $1.69 1000 $1.34 10000 $1.34	Buy Now
	SPW11N80C3FKSA1	Bulk	178		30	1 - 10 - 100 $1.95 1000 $1.59 10000 $1.59	Buy Now
Rochester Electronics	SPW11N80C3FKSA1		10,915		1	1 - 10 - 100 $1.32 1000 $1.18 10000 $1.11	Buy Now

Rutronik	SPW11N80C3FKSA1	Tube	3,300		30	1 - 10 - 100 $1.68 1000 $1.38 10000 $1.38	Buy Now
Chip One Stop	SPW11N80C3FKSA1	Tube	238	0 Weeks, 1 Days	1	1 $3.19 10 $2.33 100 $1.61 1000 $1.59 10000 $1.42	Buy Now
Chip Stock	SPW11N80C3FKSA1		275			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPW11N80C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPW11N80C3FKSA1		2,966			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N80C3XKSA2 MOSFET N-CH 800V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA11N80C3XKSA2	Tube	159		1	1 $3.17 10 $3.17 100 $1.55 1000 $1.17 10000 $1.13	Buy Now
Avnet Americas	SPA11N80C3XKSA2	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.01 10000 $0.98	Buy Now
Mouser Electronics	SPA11N80C3XKSA2		380			1 $3.29 10 $3.22 100 $1.59 1000 $1.12 10000 $1.12	Buy Now
Rochester Electronics	SPA11N80C3XKSA2		33		1	1 - 10 - 100 $1.45 1000 $1.30 10000 $1.22	Buy Now
TME	SPA11N80C3XKSA2		492		50	1 - 10 - 100 $1.50 1000 $1.50 10000 $1.50	Buy Now

Rutronik	SPA11N80C3XKSA2	Tube	500		50	1 - 10 - 100 $1.50 1000 $1.16 10000 $1.16	Buy Now
Chip Stock	SPA11N80C3XKSA2		16,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPA11N80C3XKSA2		1,000	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SPA11N80C3XKSA2		1,800		50	1 - 10 - 100 $1.46 1000 $1.37 10000 $1.32	Buy Now
New Advantage Corporation	SPA11N80C3XKSA2		1,000		1	1 - 10 - 100 - 1000 $2.12 10000 $2.12	Buy Now
Vyrian	SPA11N80C3XKSA2		595			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA11N80C3XKSA2		12,500			1 - 10 - 100 $1.68 1000 $1.36 10000 $1.36	Buy Now
Infineon Technologies AG SPP11N80C3 MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPP11N80C3		4,224			1 $3.64 10 $2.37 100 $1.86 1000 $1.33 10000 $1.26	Buy Now
TME	SPP11N80C3		91		1	1 $3.26 10 $2.41 100 $1.98 1000 $1.56 10000 $1.55	Buy Now
ComSIT USA	SPP11N80C3		23			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP11N80C3		2,234			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP11N80C3		10,652			1 - 10 - 100 $1.53 1000 $1.24 10000 $1.24	Buy Now

Wuhan P&S	SPP11N80C3		50		1	1 $1.89 10 $1.89 100 $1.58 1000 $1.35 10000 $1.35	Buy Now

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11N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247	Original	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80	PDF
11n80c3 Abstract: SPA11N80C3 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3	PDF
SPA11N80C3 Contextual Info: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3	PDF
11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3	PDF
11N80C3 Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3	PDF
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R	PDF
MOSFET 11N80c3 Abstract: 11N80 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80	PDF
Contextual Info: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3	PDF
11N80C3 Abstract: 11n80c Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c	PDF
Q67040-S4440 Abstract: 11N80C3 11N8 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking	Original	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8	PDF
11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3	PDF
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c Contextual Info: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 80011a 11n80c	PDF
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW11N80C3 PG-TO247-3 11N80C3 009-134-A O-247 PG-TO247-3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3	PDF
11N80C3 Contextual Info: 11N80C3 11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3	PDF

Q67040-S4439 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 Q67040-S4439	PDF
MOSFET 11N80c3 Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220FP 11N80C3 MOSFET 11N80c3 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22	PDF
MOSFET 11N80c3 Abstract: 11n80c3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 11n80c3	PDF
11n80c Abstract: 11N80C3 SPP11N80C3 max8210 Contextual Info: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 11n80c 11N80C3 SPP11N80C3 max8210	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
11N80C3 Abstract: SPW11N80C3 Contextual Info: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11N80C3 SPW11N80C3	PDF
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET	PDF
MOSFET 11N80c3 Abstract: 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3 Contextual Info: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3	PDF
11N80C3 Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3 Contextual Info: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 11n80c 3C100	PDF

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11N80C Price and Stock

Infineon Technologies AG SPP11N80C3XKSA1

Infineon Technologies AG SPA11N80C3XKSA1

Infineon Technologies AG SPW11N80C3FKSA1

Infineon Technologies AG SPA11N80C3XKSA2

Infineon Technologies AG SPP11N80C3

11N80C Datasheets Context Search

11n80c3

11n80c3

SPA11N80C3

11n80c3

11N80C3

MOSFET 11N80c3

MOSFET 11N80c3

11N80C3

Q67040-S4440

11n80c3

11n80c3

MOSFET 11N80c3

11N80C3

Q67040-S4439

MOSFET 11N80c3

MOSFET 11N80c3

11n80c

PEF 24628

BCM 4336

11N80C3

11n80c3

MOSFET 11N80c3

11N80C3