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    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Search Results

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N P CHANNEL dual POWER MOSFET

    Abstract: marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A STC4516 SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet
    Text: STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially


    Original     		PDF STC4516 STC4516 -30V/-7 22m-ohm -30V/-5 40m-ohm 10m-ohm 16m-ohm STC5416 N P CHANNEL dual POWER MOSFET marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet

    STN9926

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet
    Text: STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STN9926 STN9926 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet

    160N04

    Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		PDF NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 160N04 D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY To-263-7 MP-25ZT

    transistor K4145

    Abstract: 2sk4145
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145

    K4201

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 K4201

    d1875

    Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note


    Original     		PDF NP160N04TUG NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) d1875 160N04 D18754EJ1V0DS00 NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin

    TPC8005-H

    Abstract: No abstract text available
    Text: TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed U−MOS TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package


    Original     		PDF TPC8005-H TPC8005-H

    k2995

    Abstract: transistor marking MH 2SK2995
    Text: 2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance : |Yfs| = 30 S (typ.)


    Original     		PDF 2SK2995 K2995 k2995 transistor marking MH 2SK2995

    K4078

    Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY


    Original     		PDF 2SK4078 2SK4078 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY O-252 O-252) K4078 C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY D18885EJ1V0DS

    160N04

    Abstract: MP-25ZT nec a640
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		PDF NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) 160N04 MP-25ZT nec a640

    K4143

    Abstract: TRANSISTOR K4143 D1877 transistor equivalent k4143 2SK4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)


    Original     		PDF 2SK4143 2SK4143 2SK4143-S17-AY O-220 K4143 TRANSISTOR K4143 D1877 transistor equivalent k4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE

    2SK3084

    Abstract: No abstract text available
    Text: 2SK3084 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK3084 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK3084 2SK3084

    K2466

    Abstract: transistor k2466 k2466 datasheet 2SK2466
    Text: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2466 K2466 transistor k2466 k2466 datasheet 2SK2466

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261

    k3497

    Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage


    Original     		PDF 2SK3497 2SJ618 k3497 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349

    82N06

    Abstract: transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY


    Original     		PDF NP82N06PLG NP82N06PLG NP82N06PLG-E1-AY NP82N06PLG-E2-AY O-263 MP-25ZP) O-263) 82N06 transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28

    TPCS8006

    Abstract: No abstract text available
    Text: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •


    Original     		PDF TPCS8006 TPCS8006

    TPC8003

    Abstract: No abstract text available
    Text: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8003 TPC8003

    2SK2467

    Abstract: No abstract text available
    Text: 2SK2467 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 High-Power Amplifier Application Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK2467 2SK2467

    k2013

    Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ

    TPC8006

    Abstract: TPC8006-H
    Text: TPC8006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed U−MOSII TPC8006−H High-Speed and High-Efficiency DC−DC Applications Portable Equipment Applications Notebook PC Applications Converter Unit: mm Small footprint due to small and thin package


    Original     		PDF TPC8006-H TPC8006 TPC8006-H

    NP86N04MHE

    Abstract: NP86N04NHE NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04EHE, NP86N04KHE NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP86N04EHE, NP86N04KHE NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE-E2-AY NP86N04KHE-E1-AY NP86N04MHE NP86N04NHE NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY

    k2952

    Abstract: 2SK2952
    Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)


    Original     		PDF 2SK2952 k2952 2SK2952

    k1930

    Abstract: 2SK1930
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 k1930 2SK1930