2SK3683
Abstract: 2SK3683-01MR
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current
|
Original
|
2sk3683-01mr00v/038/19ao-220f15r+2mt5f125822sk3683
|
PDF
|
2Sk3683
Abstract: 2SK3683-01MR equivalent 2SK3683-01MR MOSFET 2sk3683 Data sheet
Contextual Info: 2SK3683-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
|
Original
|
2sk3683-01mro-220f2sk36832sk3683-01mr equivalent+1mosfet 2sk3683 data sheet
|
PDF
|
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
|
Original
|
ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
|
PDF
|
mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
|
Original
|
rh011h2007-10b120fismp2a5100ya868c12+8ya868c152sk4004yg865c10f5049diode 3a05diode smd sj 24diode smd sj 09diode smd sj 28
|
PDF
|
YG97256
Abstract: 2SK3683 MOSFET 2sk3683 fa5551 FA5550
Contextual Info: Under development FA5550 / 51 Fuji Switching Power Supply Control IC FA5550 / 51 Application Note (Under development) August 2007 Fuji Electric Device Technology Co.,Ltd. Rev.0 Augu-2007 1 Fuji Electric Device Technology (Under development) FA5550 / 51 Caution
|
Original
|
fa5550augu-2007200uf500uf+4yg972562sk3683mosfet 2sk3683fa5551
|
PDF
|
2SK3679
Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1
|
Original
|
2sk3598-012sk3599-01mr2sk3600-01l2sk3601-01+152sk3644-012sk3645-01mr2sk3646-01l2sk3647-012sk3586-012sk3587-01mr2sk36792sk35982sk3677-01mr2sk3680-012sk3580-01mr2sk36032sk35322sk3469-01mr2sk3532-01mr
|
PDF
|