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    IPB79CN10NG Search Results

    IPB79CN10NG Datasheets (1)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB79CN10N G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 79.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 13.0 A; Original PDF 558.65KB 12
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    IPB79CN10NG Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB79CN10N G

    MOSFET N-CH 100V 13A D2PAK
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    DigiKey IPB79CN10N G Tape & Reel 1,000
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    Infineon Technologies AG IPB79CN10NG

    Power Field-Effect Transistor, 13A I(D), 100V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Vyrian IPB79CN10NG 7,585
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