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    SPA11N80C3 Search Results

    SPA11N80C3 Datasheets (5)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPA11N80C3
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 450.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF 293.54KB 10
    SPA11N80C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 256.06KB 12
    SPA11N80C3 E8209
    Infineon Technologies 800V COOLMOS N-CHANNEL POWER MOS Original PDF 306.55KB
    SPA11N80C3XKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 11A TO220FP Original PDF 504.74KB
    SPA11N80C3XKSA2
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 11A TO220 Original PDF 504.74KB
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    SPA11N80C3 Price and Stock

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    Infineon Technologies AG SPA11N80C3XKSA1

    Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SPA11N80C3XKSA1 12,150 6
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    • 10 $1.55
    • 100 $1.43
    • 1000 $1.14
    • 10000 $1.14
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    Avnet Americas () SPA11N80C3XKSA1 Bulk 1
    • 1 $3.60
    • 10 $2.34
    • 100 $1.63
    • 1000 $1.30
    • 10000 $1.25
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    SPA11N80C3XKSA1 Tube 13 Weeks 500
    • 1 -
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    • 100 -
    • 1000 $1.12
    • 10000 $1.09
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    Arrow Electronics SPA11N80C3XKSA1 12,150 17 Weeks 1
    • 1 $2.44
    • 10 $1.55
    • 100 $1.43
    • 1000 $1.14
    • 10000 $1.14
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    Newark SPA11N80C3XKSA1 Bulk 533 1
    • 1 $3.60
    • 10 $2.34
    • 100 $1.63
    • 1000 $1.30
    • 10000 $1.25
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    TME SPA11N80C3XKSA1 50
    • 1 -
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    • 100 $1.33
    • 1000 $1.33
    • 10000 $1.33
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    Rutronik SPA11N80C3XKSA1 Tube 900 500
    • 1 -
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    • 1000 $1.36
    • 10000 $1.11
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    EBV Elektronik SPA11N80C3XKSA1 16 Weeks 500
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    Vyrian SPA11N80C3XKSA1 2,913
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    Infineon Technologies AG SPA11N80C3E8115XKSA1

    SPA11N80C3E8115XKSA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SPA11N80C3E8115XKSA1 258 226
    • 1 -
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    • 1000 $1.49
    • 10000 $1.40
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    Rochester Electronics SPA11N80C3E8115XKSA1 258 1
    • 1 -
    • 10 -
    • 100 $1.33
    • 1000 $1.19
    • 10000 $1.12
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    Infineon Technologies AG SPA11N80C3XKSA2

    Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole - Rail/Tube (Alt: SPA11N80C3XKSA2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPA11N80C3XKSA2 Tube 52 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.12
    • 10000 $1.07
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    Newark SPA11N80C3XKSA2 Bulk 265 1
    • 1 $4.05
    • 10 $2.79
    • 100 $2.08
    • 1000 $1.74
    • 10000 $1.67
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    Rochester Electronics SPA11N80C3XKSA2 28 1
    • 1 -
    • 10 -
    • 100 $1.45
    • 1000 $1.20
    • 10000 $1.07
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    TME SPA11N80C3XKSA2 500
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    • 1000 $1.12
    • 10000 $1.12
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    Rutronik SPA11N80C3XKSA2 Tube 500 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.36
    • 10000 $1.11
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    EBV Elektronik SPA11N80C3XKSA2 1,000 53 Weeks 500
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    Vyrian SPA11N80C3XKSA2 13,387
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    Infineon Technologies AG SPA11N80C3

    Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SPA11N80C3 2,686
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    TME SPA11N80C3 322 1
    • 1 $3.15
    • 10 $2.18
    • 100 $2.18
    • 1000 $2.18
    • 10000 $2.18
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    Chip 1 Exchange SPA11N80C3 1
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    Component Electronics, Inc SPA11N80C3 28
    • 1 $3.08
    • 10 $3.08
    • 100 $2.31
    • 1000 $2.00
    • 10000 $2.00
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    NXP Semiconductors SPA11N80C3

    Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian SPA11N80C3 834
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    SPA11N80C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11n80c3

    Abstract: SPA11N80C3
    Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3pg-to220-3-31pg-to220+4p-to220-3-31pg-to-220-3-31q67040-s443811n80c3 PDF

    SPA11N80C3

    Contextual Info: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original
    spa11n80c3p-to220-3-3111n80c3q67040-s4439 PDF

    11n80c3

    Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spa11n80c3pg-to220-311n80c3 PDF

    11N80C3

    Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original
    spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+2q67040-s443811n80c3 PDF

    MOSFET 11N80c3

    Abstract: 11N80
    Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spa11n80c3pg-to220-311n80c3mosfet 11n80c3+111n80 PDF

    11N80C3

    Abstract: 11n80c
    Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3p-to220-3-31p-to-220-3-31+4p-to220-3-1q67040-s443811n80c311n80c PDF

    11n80c3

    Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spa11n80c3pg-to220-311n80c3 PDF

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c
    Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+5p-to-220-3-31q67040-s443811n80c380011a11n80c PDF

    11N80C3

    Contextual Info: SPP11N80C3 SPA11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original
    spp11n80c3spa11n80c3p-to220-3-31p-to220-3-1+2q67040-s443811n80c3 PDF

    Q67040-S4439

    Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3p-to220-3-31pg-to220-3-31+4pg-to220-3-1pg-to-220-3-3111n80c3q67040-s4439 PDF

    MOSFET 11N80c3

    Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
    Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spa11n80c3pg-to220fp11n80c3mosfet 11n80c3+411n8011n80cmosfet 11n80c3 data sheetjesd22 PDF

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31
    Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3pg-to220-3-31pg-to220+8p-to220-3-31pg-to-220-3-31q67040-s443811n80c311n80spp11n8011n80c3 equivalentto220 heatsink datasheet PDF

    11N80C3

    Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3
    Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spp11n80c3spa11n80c3p-to220-3-31pg-to220-3-31+5pg-to220-3-1pg-to-220-3-3111n80c311n80c3c100 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6transistor marking code 12w sot-2324v application with ice3ar0680jzinduction cooker fault findingipw65r041igw40n60h3spw55n80c3 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    c548b

    Abstract: transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR
    Contextual Info: Application Note, V1.1, 2 February 2009 Application Note EVALQS-190W-ICE2QS02G 190W Evaluation Board Based on Quasi-resonant Flyback Converter for LCD TV SMPS Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG


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    evalqs-190w-ice2qs02gice3br4765jevalpfc2-ice2pcs02ice2pcs02+12evalqrs-ice2qs02g-80wice2qs02gan-coolmos-03ice2qs01c548btransistor d3042qs02gtransistor c548bic302transformer smps 300rquasi-resonant flyback transformerd304 transistor PDF

    BRIDGE-RECTIFIER 12v 5A

    Abstract: TV flyback transformer ETD-39 TV flyback transformer pinout inrush th1 flyback transformer tv MUR1100 equivalent ETD39 12v MUR1100 24-HN
    Contextual Info: DN06014/D Design Note – DN06014/D 170 Vdc Output, Quasi-Resonant Supply Device NCP1308 Application Input Voltage TVs, Monitors 90 – 270 Vac Output Power Topology I/O Isolation 100 W QuasiResonant Flyback Yes Other Specifications Output Voltage Ripple Nominal Current


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    dn06014/dncp1308bridge-rectifier 12v 5atv flyback transformer+8etd-39tv flyback transformer pinoutinrush th1flyback transformer tvmur1100 equivalentetd39 12vmur110024-hn PDF

    roland m dc1

    Abstract: D11/diode LP sd capacitor 226 35K 022 electrolytic PFC inductor 600UH SRW42EC AND8124 EER28 BOBBIN ece 5th sem OREGA smt HBD853
    Contextual Info: HBD853/D Rev. 2, Aug-2004 Power Factor Correction Handbook Power Factor Correction PFC Handbook Choosing the Right Power Factor Controller Solution HBD853/D Rev. 2, Aug−2004  SCILLC, 2004 “All Rights Reserved” For additional information on Power Factor Correction, contact the Technical Information Center at


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    hbd853/daug-2004roland m dc1d11/diode lp sd+8capacitor 226 35k 022 electrolyticpfc inductor 600uhsrw42ecand8124eer28 bobbinece 5th semorega smthbd853 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519b152-h9345-g2-x-7600px3544px7510+8px3560ice2as01 equivalentpx3540primarion px3540ice3br0665jprimarion px3560ice3br4765ice3br1765j PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9transistor smd code package sot89bts 2140 1b data sheettransistor smd code package sot23psb 6970 hl v1.3pef 24628 e v1.2-ginfineon psb 6970pef 4265 t v2.1ht 1200-4slb 9635 PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16spa16n50c3spi16n50c3spw21n50c3spp12n50c3spa12n50c3spi12n50c3ice3b0365jice3br4765jtda16888ice2a765p2ice2pcs01gice1pcs02gice2b0565ice1pcs02ice2pcs02ipi60r099cp PDF

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Contextual Info: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


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    o-218abo-220abo-220o-220fp+16o-247o-262o-252o-263ot-323ot-363bup213bss123l6327bss123e6327bup314dipd06n03lagbsp170pe6327tbsp315spd06n80c3xtbsp295-l6327bsp129e6327 PDF