20N60 Search Results

20N60 Datasheets (9)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1

20N60 Price and Stock

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Infineon Technologies AG SPA20N60C3XKSA1 - Rail/Tube (Alt: SPA20N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPA20N60C3XKSA1	Tube	26,116	17 Weeks	1	1 $1.20 10 $1.20 100 $1.20 1000 $1.20 10000 $1.20	Buy Now
RS	SPA20N60C3XKSA1	Bulk	3	3 Weeks	1	1 $1.07 10 $1.07 100 $1.07 1000 $1.07 10000 $1.07	Buy Now
EBV Elektronik	SPA20N60C3XKSA1		1,500	18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCB20N60TM - Tape and Reel (Alt: FCB20N60TM)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCB20N60TM	Tape & Reel	5,600	64 Weeks	800	1 - 10 - 100 - 1000 $2.71 10000 $2.67	Buy Now
Chip 1 Exchange	FCB20N60TM		624			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	FCB20N60TM			64 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FCB20N60TM		14,400	53 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCP20N60 - Rail/Tube (Alt: FCP20N60)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCP20N60	Tube	400	31 Weeks	50	1 - 10 - 100 $2.69 1000 $2.62 10000 $2.62	Buy Now
Avnet Silica	FCP20N60		900	53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCP20N60		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FCP20N60					1 - 10 - 100 $3.13 1000 $3.04 10000 $3.01	Buy Now
Infineon Technologies AG IGP20N60H3XKSA1 IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-220, 3 Pins - Rail/Tube (Alt: IGP20N60H3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IGP20N60H3XKSA1	Tube	20		1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IGP20N60H3XKSA1	Bulk	522		1	1 $1.88 10 $1.66 100 $1.41 1000 $1.21 10000 $1.03	Buy Now
onsemi HGTG20N60B3 600V, PT IGBT - Rail/Tube (Alt: HGTG20N60B3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTG20N60B3	Tube			450	1 - 10 - 100 - 1000 $2.60 10000 $2.41	Get Quote
Rochester Electronics	HGTG20N60B3		11,700		1	1 - 10 - 100 $2.95 1000 $2.64 10000 $2.48	Buy Now
Avnet Silica	HGTG20N60B3			53 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	HGTG20N60B3		2,700			1 $1.86 10 $1.86 100 $1.86 1000 $1.86 10000 $1.86	Get Quote

Find more 20N60 price and stock on Findchips.com

20N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20n60b o-24s s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20n60b o-220ab o-263	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b +420n60 datasheet 20n60 g 20n60 to220 igbt 20n60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20n60 qw-r502-587 mosfet 20n60	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20n60 qw-r502-587 20n60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20n60 20n60b o-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20n60c5m o-220	PDF
20n60c5 Abstract: DSA003709 Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	20n60c5 o-247 o-220 20070625a +1dsa003709	PDF
Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20n60c5m o-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	isoplus220tm 20n60c 220lvtm o-220lv +3728b1 065b1 123b1	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20n60c5 o-247 o-220 20080523d	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b +620n60 to220 igbt 20n60 20n60 g 20n60 igbt 20n60 datasheet ixdp 20n60 bd1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20n60b o-268 o-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20n60c isoplus220tm e72873 20080523a	PDF

20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20n60b o-220ab o-263	PDF
Contextual Info: h IXYS v HiPerFET Power MOSFETs " IXFH/IXFM15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15	OCR Scan	ixfh/ixfm15n60 15n60 20n60 o-247 +1o-204	PDF
20N60C Abstract: UPS 380v Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	isoplus220tm 20n60c 220lvtm 728b1 +3065b1 123b1 ups 380v	PDF
UPS 380v Abstract: 20n60c power switching Contextual Info: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM	Original	20n60c isoplus220tm 220lvtm e153432 +5728b1 065b1 123b1 ups 380v power switching	PDF
IXYS CS 2-12 Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD	OCR Scan	15n60 20n60 o-247 ixys cs 2-12	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	20n60c5m o-220 20070704a	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20n60c5m o-220	PDF
Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20n60b2d1 ic110 8-06b 405b2	PDF
20N60 Contextual Info: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient	Original	20n60 15n60 o-247 o-204	PDF

20N60 Search Results

20N60 Datasheets (9)

20N60 Price and Stock

Infineon Technologies AG SPA20N60C3XKSA1

onsemi FCB20N60TM

onsemi FCP20N60

Infineon Technologies AG IGP20N60H3XKSA1

onsemi HGTG20N60B3

20N60 Datasheets Context Search

20N60B

20n60B

20N60 datasheet

mosfet 20n60

20N60

20n60c5

20n60c

20N60 to220

20n60b

20N60C

20n60

20N60C

UPS 380v

IXYS CS 2-12

20N60