15N60 Search Results

Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: h IXYS v HiPerFET Power MOSFETs " IXFH/15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15

IXYS CS 2-12

Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD

15N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

Contextual Info: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

20n60 to-247

Abstract: 20N60 20N60D 91526E
Contextual Info: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous

15N60

Abstract: K 15N60
Contextual Info: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A 15N60

20N60

Abstract: 15N60 K 15N60 20n60 to-247
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A IDM TC = 25°C, pulse width limited by TJM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

20n60

Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A

Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

DSA008959

Abstract: 15N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

15N60

Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20

GS54

Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

15N60

Abstract: 15N60C5 E72873 15n60c
Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs 15N60, 55 15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 15N60 15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r

TRANSISTOR 15n60c3

Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

15N60CFD

Abstract: JESD22 SPP15N60CFD D134 15n60c
Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability

15N60CFD

Abstract: 15N60 JESD22 SPW15N60CFD D134
Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated

20N60

Abstract: 15N60 K 15N60 15n60 TO-247 20n60 G
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous

20N60

Contextual Info: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient