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    15N60C Search Results

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    Infineon Technologies AG SPP15N60C3XKSA1

    MOSFET N-CH 650V 15A TO220-3
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    DigiKey SPP15N60C3XKSA1 Tube 378 1
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    Avnet Americas SPP15N60C3XKSA1 Tube 15 Weeks 500
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    Mouser Electronics SPP15N60C3XKSA1 357
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    Rochester Electronics SPP15N60C3XKSA1 1,256 1
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    EBV Elektronik SPP15N60C3XKSA1 16 Weeks 500
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    Win Source Electronics SPP15N60C3XKSA1 80
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    Infineon Technologies AG SPW15N60C3FKSA1

    MOSFET N-CH 650V 15A TO247-3
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    DigiKey SPW15N60C3FKSA1 Tube 206 1
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    Rochester Electronics SPW15N60C3FKSA1 31,975 1
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    Infineon Technologies AG SPA15N60C3XKSA1

    MOSFET N-CH 650V 15A TO220-FP
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    DigiKey SPA15N60C3XKSA1 Tube 175 1
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    Avnet Americas SPA15N60C3XKSA1 Tube 15 Weeks 500
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    Newark SPA15N60C3XKSA1 Bulk 254 1
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    Rochester Electronics SPA15N60C3XKSA1 7,183 1
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    TME SPA15N60C3XKSA1 73 1
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    EBV Elektronik SPA15N60C3XKSA1 16 Weeks 500
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    Rochester Electronics LLC SPI15N60C3

    N-CHANNEL POWER MOSFET
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    DigiKey SPI15N60C3 Bulk 197
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    IXYS Corporation IXKC15N60C5

    MOSFET N-CH 600V 15A ISOPLUS220
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    DigiKey IXKC15N60C5 Tube 50
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    TME IXKC15N60C5 1
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    New Advantage Corporation IXKC15N60C5 735 1
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    Vyrian IXKC15N60C5 453
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    15N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


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    15N60C5 ISOPLUS220TM E72873 PDF

    Contextual Info: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


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    15N60C5 ISOPLUS220TM E72873 PDF

    Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


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    15N60C5 ISOPLUS220TM E72873 20090209b PDF

    GS54

    Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    15N60C5 ISOPLUS220TM E72873 20090209b GS54 PDF

    GS54

    Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


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    15N60C5 ISOPLUS220TM E72873 GS54 PDF

    15N60

    Abstract: 15N60C5 E72873 15n60c
    Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


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    15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c PDF

    TRANSISTOR 15n60c3

    Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 TRANSISTOR 15n60c3 PDF

    15N60CFD

    Abstract: JESD22 SPP15N60CFD D134 15n60c
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


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    SPP15N60CFD PG-TO220 15N60CFD 15N60CFD JESD22 SPP15N60CFD D134 15n60c PDF

    15N60CFD

    Abstract: 15N60 JESD22 SPW15N60CFD D134
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated


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    SPW15N60CFD PG-TO247 15N60CFD 009-134-A O-247 PG-TO247-3 15N60CFD 15N60 JESD22 SPW15N60CFD D134 PDF

    15N60C3

    Abstract: 15N60 SPP15N60C3 diode 400V 4A SPA15N60C3 TRANSISTOR 15n60c3 SPI15N60C3
    Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 15N60C3 15N60 SPP15N60C3 diode 400V 4A SPA15N60C3 TRANSISTOR 15n60c3 SPI15N60C3 PDF

    15N60C3

    Abstract: TRANSISTOR 15n60c3 SP000216325 SPP15N60C3 Q67040-S4600 VDD480V Q67040-S4601
    Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


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    SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPP15N60C3 15N60C3 TRANSISTOR 15n60c3 SP000216325 Q67040-S4600 VDD480V Q67040-S4601 PDF

    15N60CFD

    Abstract: D134
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated


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    SPW15N60CFD SPW15N60CFD PG-TO247 15N60CFD 15N60CFD D134 PDF

    15N60C3

    Abstract: VDD480V TRANSISTOR 15n60c3
    Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


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    SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPP15N60C3 15N60C3 VDD480V TRANSISTOR 15n60c3 PDF

    15N60CFD

    Abstract: 15N60 JESD22 SPA15N60CFD PG-TO220FP D134 transistor D94 15n60c
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO220FP • Extreme dv /dt rated


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    SPA15N60CFD PG-TO220FP 15N60CFD 15N60CFD 15N60 JESD22 SPA15N60CFD PG-TO220FP D134 transistor D94 15n60c PDF

    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 • Extreme dv /dt rated A PG-TO220


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    SPP15N60CFD PG-TO220 15N60CFD PDF

    15N60C3

    Abstract: 380v SPW15N60C3 TRANSISTOR 15n60c3
    Contextual Info: 15N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPW15N60C3 P-TO247 Q67040-S4604 15N60C3 15N60C3 380v SPW15N60C3 TRANSISTOR 15n60c3 PDF

    15N60CFD

    Abstract: JESD22 SPP15N60CFD D134 15n60
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 Ω ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220


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    SPP15N60CFD PG-TO220 15N60CFD 15N60CFD JESD22 SPP15N60CFD D134 15n60 PDF

    15N60CFD

    Abstract: 15N60 JESD22 SPW15N60CFD D134
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated


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    SPW15N60CFD PG-TO247 15N60CFD 15N60CFD 15N60 JESD22 SPW15N60CFD D134 PDF

    15N60CFD

    Abstract: 15N60 JESD22 SPI15N60CFD SPP15N60CFD D134
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO262 • Extreme dv /dt rated


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    SPI15N60CFD PG-TO262 SPP15N60CFD PG-TO220 15N60CFD 15N60CFD 15N60 JESD22 SPI15N60CFD SPP15N60CFD D134 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    15N60CFD

    Abstract: D134
    Contextual Info: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 • Extreme dv /dt rated A PG-TO220


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    SPP15N60CFD SPP15N60CFD PG-TO220 15N60CFD 15N60CFD D134 PDF

    VDD480V

    Abstract: 15N60C3 TRANSISTOR 15n60c3 Vdd-480V
    Contextual Info: 15N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPW15N60C3 P-TO247 Q67040-S4604 15N60C3 VDD480V 15N60C3 TRANSISTOR 15n60c3 Vdd-480V PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Contextual Info: 15N60C3, 15N60C3 15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 PDF