20N60 Search Results

20N60 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60A	AK Semiconductor	20A600V N-channel enhancement mode MOSFET with 20A continuous drain current, 600V drain-source voltage, 0.33Ω typical on-resistance at 10V gate voltage, available in TO-220F, TO-247 and TO-247S packages.	Original	PDF
SLF20N60S	Maplesemi	20A, 600V N-channel MOSFET with RDS(on) of 0.19 ohm at VGS = 10V, low gate charge of 27nC, designed for high-efficiency switching applications, featuring high ruggedness, fast switching, and 100% avalanche testing.	Original	PDF
JMPF20N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package.	Original	PDF
CWS20N60AC	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
CWS20N60AZ	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF

JMPC20N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220C-3L package.	Original	PDF
CWS20N60AF	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF

20N60 Price and Stock

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onsemi FCD620N60ZF MOSFET N-CH 600V 7.3A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FCD620N60ZF	Digi-Reel	6,598		1	1 $2.68 10 $1.73 100 $1.19 1000 $0.96 10000 $0.96	Buy Now
	FCD620N60ZF	Cut Tape	6,598		1	1 $2.68 10 $1.73 100 $1.19 1000 $0.96 10000 $0.96	Buy Now
	FCD620N60ZF	Tape & Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.79	Buy Now
Mouser Electronics	FCD620N60ZF		4,470			1 $1.12 10 $0.93 100 $0.90 1000 $0.82 10000 $0.79	Buy Now
Richardson RFPD	FCD620N60ZF				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FCD620N60ZF			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FCD620N60ZF			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MSJL20N60A-TP N-CHANNEL MOSFET,DFN8080A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MSJL20N60A-TP	Digi-Reel	5,717		1	1 $4.50 10 $2.97 100 $2.10 1000 $1.61 10000 $1.61	Buy Now
	MSJL20N60A-TP	Cut Tape	5,717		1	1 $4.50 10 $2.97 100 $2.10 1000 $1.61 10000 $1.61	Buy Now
	MSJL20N60A-TP	Tape & Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.59	Buy Now
Micro Commercial Components MSJL120N60FH-TP N-CHANNEL MOSFET,DFN8080A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MSJL120N60FH-TP	Digi-Reel	2,975		1	1 $4.96 10 $3.29 100 $2.35 1000 $2.22 10000 $2.22	Buy Now
	MSJL120N60FH-TP	Cut Tape	2,975		1	1 $4.96 10 $3.29 100 $2.35 1000 $2.22 10000 $2.22	Buy Now
Mouser Electronics	MSJL120N60FH-TP		3,000			1 $5.01 10 $3.32 100 $2.64 1000 $2.17 10000 $1.84	Buy Now
PanJit Group PJMH120N60EC_T0_00601 600V/ 120MOHM / 30A/ EASY TO DRI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJMH120N60EC_T0_00601	Tube	1,788		1	1 $3.92 10 $2.98 100 $2.70 1000 $2.34 10000 $2.34	Buy Now
Infineon Technologies AG IKQ120N60TXKSA1 IGBT TRENCH FS 600V 160A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKQ120N60TXKSA1	Tube	1,167		1	1 $10.62 10 $10.62 100 $6.31 1000 $4.98 10000 $4.98	Buy Now
Mouser Electronics	IKQ120N60TXKSA1		473			1 $10.62 10 $6.32 100 $5.37 1000 $4.97 10000 $4.97	Buy Now
Rochester Electronics	IKQ120N60TXKSA1		1,830		1	1 - 10 - 100 $4.98 1000 $4.45 10000 $4.19	Buy Now
Chip One Stop	IKQ120N60TXKSA1	Tube	1,435	0 Weeks, 1 Days	1	1 $10.50 10 $7.46 100 $5.74 1000 $5.74 10000 $5.74	Buy Now
EBV Elektronik	IKQ120N60TXKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263 20n60B	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 mosfet 20n60	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 20N60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20N60 20N60B O-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c5 Abstract: DSA003709 Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	20N60C5 O-247 O-220 20070625a DSA003709	PDF
Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20N60C5 O-247 O-220 20080523d	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B 20N60B O-268 O-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF

20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263	PDF
Contextual Info: h IXYS v HiPerFET Power MOSFETs " IXFH/IXFM15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15	OCR Scan	IXFH/IXFM15N60 15N60 20N60 20N60 O-247 O-204	PDF
20N60C Abstract: UPS 380v Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v	PDF
UPS 380v Abstract: 20n60c power switching Contextual Info: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM	Original	20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching	PDF
IXYS CS 2-12 Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD	OCR Scan	15N60 20N60 O-247 IXYS CS 2-12	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	20N60C5M O-220 20070704a	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2D1 IC110 8-06B 405B2	PDF
20N60 Contextual Info: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient	Original	20N60 15N60 O-247 O-204 O-204 O-247 20N60	PDF

20N60 Search Results

20N60 Datasheets (16)

20N60 Price and Stock

onsemi FCD620N60ZF

Micro Commercial Components MSJL20N60A-TP

Micro Commercial Components MSJL120N60FH-TP

PanJit Group PJMH120N60EC_T0_00601

Infineon Technologies AG IKQ120N60TXKSA1

20N60 Datasheets Context Search

20N60B

20n60B

20N60 datasheet

mosfet 20n60

20N60

20n60c5

20n60c

20N60 to220

20n60b

20N60C

20n60

20N60C

UPS 380v

IXYS CS 2-12

20N60