03N60C3 Search Results

HVR-1X 7 diode

Abstract: HV9805 HVR-1X 2 diode HVR-1X 6 diode
Contextual Info: Supertex inc. HV9805 High Voltage LED Driver General Description The HV9805 driver IC is targeted at driving high voltage LED strings from mains. High voltage LED strings offer an inherent cost advantage with respect to cooling and optics. A boundary mode boost

03N60C3

Abstract: SPD03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2

Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated R DS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability

03n60

Abstract: 03n60c3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω

03N60C3

Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
Contextual Info: Final data 03N60C3, 03N60C3 03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

03N60C3

Abstract: SPP03N60C3 SDP06S60 SPB03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)

03N60C3

Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)

03N60C3

Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω

SMD Transistor g20

Abstract: 03N60C3 2535-r
Contextual Info: 03N60C3, 03N60C3 03N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

smd diode UJ 64 A

Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability

SPD03N60C3

Abstract: 03N60C3 P-TO252 SDP06S60 SPU03N60C3
Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability

Contextual Info: 03N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 0.7 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type Package Ordering Code

03N60C3

Abstract: SMD Transistor g20 SPP03N60C3 SPA03N60C3 SPB03N60C3
Contextual Info: 03N60C3, 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

DIN 6784

Abstract: TRANSISTOR SMD MARKING CODE 2A SMD TRANSISTOR MARKING 2A SOT223 03n60c3 TRANSISTOR SMD MARKING CODE 7A SDP06S60 SPN03N60C3 VPS05163 smd diode UJ 64 A
Contextual Info: 03N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 0.7 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type Package

03N60C3

Abstract: SDP06S60 SPB03N60C3 SPP03N60C3 03n60
Contextual Info: 03N60C3 03N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A •=High peak current capability

03N60C3

Contextual Info: 03N60C3, 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

03N60C3

Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2

03N60C3

Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability

03N60C3

Abstract: DT SMD 03n60 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3 diode 420v smd diode sm 3c
Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability

03N60C3

Abstract: 03n60 SPN03N60C3 SDP06S60 VPS05163 VPS0516
Contextual Info: 03N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 0.7 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type Package Ordering Code