03N60 Search Results

HVR-1X 7 diode

Abstract: HV9805 HVR-1X 2 diode HVR-1X 6 diode
Contextual Info: Supertex inc. HV9805 High Voltage LED Driver General Description The HV9805 driver IC is targeted at driving high voltage LED strings from mains. High voltage LED strings offer an inherent cost advantage with respect to cooling and optics. A boundary mode boost

03N60C3

Abstract: SPD03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2

03N60S5

Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
Contextual Info: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

FMD03N60G

Abstract: 03n60 on semiconductor marking code dpack Diode SMD SJ 28
Contextual Info: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27 -'05 CHECKED Oct .-27 -'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

03n60s5

Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

DIODE JS.9 smd

Contextual Info: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

03n60s5

Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances

P-TO263-3-2

Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

03N60

Abstract: SPB03N60S5
Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Contextual Info: 03N60C3 03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated R DS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability

transistor smd 6.z

Abstract: SPN03N60S5
Contextual Info: 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance

Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

03n60

Abstract: 03n60c3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω

Contextual Info: 03N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

03N60S5

Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

03n60s5

Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances

SPPX4N60S5

Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
Contextual Info: 03N60S5 03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated

03N60C3

Abstract: SPP03N60C3 SDP06S60 SPB03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)

SPN03N60S5

Contextual Info: 03N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax 650 V • Optimized capacitances RDS on 1.4 Ω • Improved noise immunity ID

03n60s5

Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

diode 1538

Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances

Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances

03N60C3

Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
Contextual Info: 03N60C3 03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)