HGTG Search Results

HGTG Datasheets (204)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HGTG10N120BN	Fairchild Semiconductor	35A,1200V, NPT Series N-Channel IGBT	Original	PDF	101.08KB	8
HGTG10N120BN	Fairchild Semiconductor	35 A, 1200 V, NPT N-Channel IGBT	Original	PDF	177.56KB	8
HGTG10N120BN	Intersil	35A, 1200V, NPT Series N-Channel IGBT	Original	PDF	82.48KB	7
HGTG10N120BND	Fairchild Semiconductor	35 A, 1200 V, NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	111.41KB	8
HGTG10N120BND	Fairchild Semiconductor	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	100.51KB	8
HGTG10N120BND	Intersil	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	83.52KB	7
HGTG10N120BND_NL	Fairchild Semiconductor	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	111.42KB	8
HGTG10N120C3D	Harris Semiconductor	600V / 1200V UFS Series IGBTs	Original	PDF	45.36KB	2
HGTG11N120CN	Fairchild Semiconductor	43 A, 1200 V, NPT N-Channel IGBT	Original	PDF	137.95KB	7
HGTG11N120CN	Fairchild Semiconductor	43A,1200V, NPT Series N-Channel IGBT	Original	PDF	100.7KB	8
HGTG11N120CN	Intersil	43A, 1200V, NPT Series N-Channel IGBT	Original	PDF	82.71KB	7
HGTG11N120CND	Fairchild Semiconductor	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	100.01KB	8
HGTG11N120CND	Fairchild Semiconductor	43 A, 1200 V, NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	110.59KB	8
HGTG11N120CND	Intersil	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	83.01KB	7

HGTG11N120CND_NL	Fairchild Semiconductor	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	110.59KB	8
HGTG12N60A4	Fairchild Semiconductor	600V SMPS Series N-Channel IGBT	Original	PDF	116.13KB	8
HGTG12N60A4	Fairchild Semiconductor	600 V, SMPS N-Channel IGBT	Original	PDF	183.57KB	8
HGTG12N60A4	Intersil	600V, SMPS Series N-Channel IGBT	Original	PDF	117.72KB	10
HGTG12N60A4D	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	231.76KB	12
HGTG12N60A4D	Fairchild Semiconductor	600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF	173.74KB	8

...

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onsemi HGTG10N120BND IGBT NPT 1200V 35A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG10N120BND	Tube	8,930		1	1 $5.03 10 $5.03 100 $2.81 1000 $1.97 10000 $1.84	Buy Now
Rochester Electronics	HGTG10N120BND		20,781		1	1 - 10 - 100 $1.94 1000 $1.73 10000 $1.63	Buy Now
Chip Stock	HGTG10N120BND		15,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi HGTG11N120CND IGBT NPT 1200V 43A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG11N120CND	Tube	1		1	1 $6.42 10 $6.42 100 $6.42 1000 $6.42 10000 $6.42	Buy Now
Mouser Electronics	HGTG11N120CND		556			1 $6.91 10 $5.06 100 $4.09 1000 $3.22 10000 $3.22	Buy Now
Newark ()	HGTG11N120CND	Bulk	1,215		1	1 $6.42 10 $5.50 100 $3.36 1000 $3.06 10000 $3.06	Buy Now
	HGTG11N120CND	Bulk			450	1 - 10 - 100 - 1000 $2.95 10000 $2.95	Buy Now
Onlinecomponents.com	HGTG11N120CND		900			1 - 10 $5.00 100 $3.02 1000 $2.85 10000 $2.85	Buy Now
Rochester Electronics	HGTG11N120CND		213		1	1 - 10 - 100 $2.56 1000 $2.29 10000 $2.15	Buy Now

Richardson RFPD	HGTG11N120CND				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	HGTG11N120CND		7,356			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	HGTG11N120CND		7,650			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	HGTG11N120CND		900		2	1 - 10 $7.00 100 $4.23 1000 $3.99 10000 $3.99	Buy Now
Master Electronics	HGTG11N120CND		900			1 - 10 $5.00 100 $3.02 1000 $2.85 10000 $2.85	Buy Now
onsemi HGTG7N60A4 IGBT 600V 34A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG7N60A4	Tube			150	1 - 10 - 100 - 1000 $1.43 10000 $1.43	Buy Now
Chip Stock	HGTG7N60A4		5,040			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	HGTG7N60A4		3,540			1 - 10 - 100 $3.64 1000 $3.27 10000 $3.27	Buy Now
onsemi HGTG12N60A4 IGBT 600V 54A TO-247-3
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DigiKey	HGTG12N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	HGTG12N60A4	Tube			300	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	HGTG12N60A4	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	HGTG12N60A4		3,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	HGTG12N60A4		2,000			1 - 10 $6.77 100 $4.51 1000 $4.51 10000 $4.51	Buy Now
onsemi HGTG30N60B3 IGBT 600V 60A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG30N60B3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	HGTG30N60B3	Bulk	39		1	1 $0.35 10 $0.35 100 $0.35 1000 $0.35 10000 $0.35	Buy Now
Bristol Electronics	HGTG30N60B3		57		2	1 - 10 $3.20 100 $2.30 1000 $2.30 10000 $2.30	Buy Now
Quest Components	HGTG30N60B3		45			1 $6.60 10 $3.30 100 $3.30 1000 $3.30 10000 $3.30	Buy Now

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HGTG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
g30n60 Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at	Original	HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60	PDF
G30N60 Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse Contextual Info: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. G30N60 TA49053 TA49172 TA49170 G30N60B3 G30N60B3D LD26 HGTG30N60b 200pulse	PDF
G40N60 Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3 Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3	PDF
g12n60c3d Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d LD26 RHRP1560 TA49061 TA49123	PDF
18n120bnd Abstract: HGTG18N120BND 12V 200A Relay LD26 TA49304 Contextual Info: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG18N120BND HGTG18N120BND 18n120bnd 12V 200A Relay LD26 TA49304	PDF
G20N120CN Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120 Contextual Info: HGTG20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 G20N120	PDF
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Contextual Info: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347	PDF
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347	PDF
Contextual Info: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar	Original	HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281.	PDF
TG12N60C3D Abstract: g12n60c3d TG12N60 g12n G12N60 Contextual Info: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .	OCR Scan	HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60	PDF
g7n60 Abstract: g7n60a Contextual Info: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These	Original	HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC g7n60 g7n60a	PDF
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent	PDF
10N120BND Abstract: 10n120bnd equivalent Contextual Info: HGTG10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best	OCR Scan	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 1-800-4-HARRIS 10N120BND 10n120bnd equivalent	PDF
10N120BN Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN	PDF

P channel 600v 20a IGBT Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 Contextual Info: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ	Original	HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3	PDF
20n60c3DR Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D Contextual Info: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	Original	HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D	PDF
G40N60B3 Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3	PDF
G40N60 Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 Contextual Info: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678	PDF
30N60A4 Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345 Contextual Info: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 TA49373 30N60A HGTP30N60A4D TA49345	PDF
15N120C3 Contextual Info: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching	OCR Scan	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3	PDF
G12N60b3 Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A Contextual Info: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A	PDF
IGBT 12n60a4D Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337 Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and	Original	HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. IGBT 12n60a4D 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTG*N60A4D ta49337	PDF
G12N60B3 Abstract: HGTG12N60B3 HGTG12N60B3D LD26 Contextual Info: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26	PDF
g20n60 Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a	PDF

HGTG Search Results

HGTG Datasheets (204)

HGTG Price and Stock

onsemi HGTG10N120BND

onsemi HGTG11N120CND

onsemi HGTG7N60A4

onsemi HGTG12N60A4

onsemi HGTG30N60B3

HGTG Datasheets Context Search

g30n60

G30N60

G40N60

g12n60c3d

18n120bnd

G20N120CN

40N60A4

40N60A4

TG12N60C3D

g7n60

HG20N60B3

10N120BND

10N120BN

P channel 600v 20a IGBT

20n60c3DR

G40N60B3

G40N60

30N60A4

15N120C3

G12N60b3

IGBT 12n60a4D

G12N60B3

g20n60