1200V 30A TO247 Search Results

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

HGTG30N120D2

Abstract: AN7254 AN7260 HGTG20N100D2 G30N120D2
Contextual Info: HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss

APT10035LLL

Abstract: APT30D120B APT30D120S 30A 1200V Diode APT TO-247
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D120B 1200V APT30D120S 1200V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

STGW30NC120HD

Abstract: GW30NC120HD JESD97
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

GW30NC120HD

Abstract: STGW30NC120HD schematic diagram induction heating JESD97 W313 9915 H
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

STGW30NC120HD

Abstract: GW30NC120HD JESD97 STGW30NC120HD ST
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

1200v 30A to247

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

STGW30NC120HD ST

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

HGTG30N120D2

Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
Contextual Info: HGTG30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL

600v 30a IGBT

Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

schematic diagram "induction heating"

Abstract: schematic diagram induction heating induction heating schematic schematic induction heating GW30NC120HD ic MARKING QG induction heating control circuit diagram schematic diagram for induction welding JESD97 STGW30NC120HD
Contextual Info: STGW30NC120HD N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH IGBT TARGET SPECIFICATION General features Type VCES STGW30NC120HD 1200V VCE sat (Max) @ 25°C < 2.8V • LOW ON-LOSSES ■ LOW ON-VOLTAGE DROP (Vcesat) ■ HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE

30N120D2

Contextual Info: m a r i a HGTG30N120D2 s 30A, 1200V N-Channel IGBT A p ril 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The H G T G 30 N 1 20 D 2 is a M O S g ate d high vo lta g e sw itch in g

Contextual Info: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200

IXGH30N120B3

Abstract: ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns
Contextual Info: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200

30120CC

Contextual Info: RHRG30120CC fJi HARRIS S E M I C O N D U C T O R 30A, 1200V Hyperfast Dual Diode Aprii 1995 Features Package • Hyperfast with Soft Recovery . <65ns • Operating Tem perature. +175°C • Reverse V oltage. .1200V JEDEC STYLE TO-247

Contextual Info: 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP30N120C3 IXYH30N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

12v 30a smps

Contextual Info: IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXYP30N120C3

Contextual Info: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M