110A Search Results

5lpcv2411

Contextual Info: LPCV Series • Linear proportional controller • Ratings from 15A to 110A @ 240 VAC • 0-5 V DC, 0-10 V DC, or 4-20mA input PRODUCT SELECTION Description 15 A 25 A 40 A 75 A 110 A 0-5 VDC Control 0-10 VDC Control 4-20 VDC Control 5LPCV2415 10LPCV2415 20LPCV2415

Rectifiers

Abstract: MIMMD110A180DK
Contextual Info: 110A180DK 1800V 110A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

MIMMK110A160UA

Abstract: 110A 1600V thyristor
Contextual Info: 110A160UA 1600V 110A thyristor Module RoHS Compliant Features • Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives

110L2G43

Abstract: 110U2G43 110Q2G43 30-BRIDGE
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE 110 G,L,Q,U 2G43 SINGLE & THREE PHASE FULL WAVE BRIDGE APPLICATIONS. Unit in mm FEATURES: 3 - C M 5 X 10 ) %-<t 6,3±CL2 . Repetitive Peak Reverse Voltage : V r r m =^00~1600V 7 92.3± Q S 6. 3 . Average Output Rectified Current : Io=110A(l$)

siemens phototransistor

Abstract: siemens k50
Contextual Info: SIEMENS CMPNTSi OPTO " MME Ô23b32b 0005234 O BiS IEX ]> LPT100/100A/100B LPT110/110A/110B S IE M E N S PHOTOTRANSISTOR T—41—67 Package Dimensions in Inches LPT100/A/B LPT110/AyB .200 OIA LENS—s. t 1r ^ .105 TYP k ±.035 t U ÏÏ1 019 d i a . - / ±.003

Contextual Info: 110AT 110AT 1 to 10 LVDS Data/Clock Distributor with Failsafe T ex a s In s t r u m e n t s Literature Number: SNOSAC2I £/r Semiconductor D S 9 0L V 1 10 A T 1 to 10 LVD S D a ta/C lock D istrib u to r w ith Failsafe Features D S 90LV 110A isa 1 to 10 data/clock distributor utilizing LVDS

Contextual Info: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

SUM110N06-06

Abstract: SUM110N06-06-E3
Contextual Info: SUM110N06-06 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.006 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Industrial D

SUM110N04-04

Abstract: SUM110N04-04-E3
Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0035 at VGS = 10 V 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-263 D G G D S

TFS110AA

Contextual Info: Filename: 110AA.doc Version 1.2 Vectron International 22.03.2011 Filter specification TFS 110AA 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 939 Ω | -12,09 pF 809 Ω | -11,79 pF

NPIM74C100MTRF

Abstract: NPIM104CR22MTRF NPIM143C1R0MTRF NPIM74C NPIM74C1R0MTRF NPIM53C1R0MTRF NPIM53CR68MTRF NPIM103C1R0MTRF fd1h NPIM145C2R2MTRF
Contextual Info: NPIM Shielded Power Inductors NPIM_C Series FEATURES • SHIELDED POWER INDUCTOR • MOLDED METAL COMPOSITE CONSTRUCTION RoHS • HIGH SATURATION CURRENT CHARACTERISTICS ~ 110A* Compliant • HIGH EFFICIENCY (2X IMPROVEMENT OVER includes all homogeneous materials

111RKI

Abstract: Si2170
Contextual Info: Bulletin I25152 rev. E 09/03 110/111RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features 110A High current and high surge ratings Hermetic ceramic housing Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics

IRF3205

Abstract: IA418 AN-994 IRF3205L IRF3205S IA-418
Contextual Info: PD - 94149 IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International Rectifier

Contextual Info: IR L R /U 110A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

20X127

Abstract: S079964 E075744 Q081457 E082804 Z098600 L075703 C088368 N076303 Q098592
Contextual Info: 660VDC FERRULE FUSES /SPECIAL PURPOSE 660V DC gRB FROM 0.8 TO 110A SIZE: 27X60 ➤ Dimensions 60,3 Ø 27 7 Ø5 Trip force: 4.5N at 0mm-2.5N at 7mm G APPLICATIONS DATA SIZE CURRENT RATING IN A 27 x 60 0.8 1 1.5 2 3.15 4 5 6.3 8 10 12 16 20 25 32 40 50 63 80

Contextual Info: MSFC110 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 110Amp Applications     Circuit Features   MSFC 1 2 Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control 3   5 4   International standard package

Contextual Info: THROUGH-HOLE RADIAL SLUG CORE POWER CHOKES AIRD-110A&B SERIES FEATURES: OPTIONS: COMMON APPLICATIONS: • • • • • Bulk Packaging is Standard • Custom Design Available • • • • High Saturation Material Polyolefin Shrink Tubing Low DC Resistance

Contextual Info: LPCV Series • Linear proportional controller • Ratings from 15A to 110A @ 240 VAC • 0-5 V DC, 0-10 V DC, or 4-20mA input • For use with resistive loads only 25 A 40 A 5LPCV2425 5LPCV2440 0-10 VDC Control 10LPCV2415 10LPCV2425 10LPCV2440 4-20 mA Control

Contextual Info: SHF55N06-007L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4988, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 60 Volt, 0.007 Ohm, 110A MOSFET current limited to 55A by package • Characterized at VGS of 4.5V for Logic Level Drive

Dioden BY 251

Contextual Info: 5KP 6.5 . 5KP 110A 5KP 6.5C . 5KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 7,5 ±0.1 62.5 ±0.5 Ø 8 ±0.1

IRFP064N

Abstract: IRFP064N equivalent f1010e irf3205 DRIVER otto IRF3205 equivalent irf3205 mosfet transistor IRF3205 IR 190h IRF3205
Contextual Info: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRL3502 IRL3502S
Contextual Info: PD -9.1676A IRL3502S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.007W G Description ID = 110A† S These HEXFET Power MOSFETs were designed

C164

Abstract: C165 ci 827 c164 scr general electric
Contextual Info: HIGH SPEED Silicon Controlled Rectifier 800Volts 110A RMS C164/C165 AMPLIFYING GATE f The General Electric C l 64 and C l65 Silicon Controlled Rectifiers are de signed for power switching at high frequencies. These are all-diffused Pic Pic devices, employing the field-proven amplifying gate.

FPT100 phototransistor

Abstract: FPT100 FPT110 FPT100A FPT100B FPT110A FPT110B OPTO-26 OPTO-28 FPT100/A/B
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 D l Ê j 3 4 h clti 74 0DS73SA FPTIOO/A/B FPT110/A/B T ^ General Purpose Silicon Planar Phototransistor PACKAGE. FPT100 FPT100A FPT100B FPT110 110A FPT110B General Description The FPTIO Oand FPT 110are 3-terminal npn Planar phototransistors with exceptionally stable characteristics and high Illumination-sensltivity. The availability of the base pin