FPT100 phototransistor
Abstract: FPT100 FPT110 FPT100A FPT100B FPT110A FPT110B OPTO-26 OPTO-28 FPT100/A/B
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 D l Ê j 3 4 h clti 74 0DS73SA FPTIOO/A/B FPT110/A/B T ^ General Purpose Silicon Planar Phototransistor PACKAGE. FPT100 FPT100A FPT100B FPT110 FPT110A FPT110B General Description The FPTIO Oand FPT 110are 3-terminal npn Planar phototransistors with exceptionally stable characteristics and high Illumination-sensltivity. The availability of the base pin
|
OCR Scan
|
0ds73sfpt110/a/bfpt100fpt110+8opto-26fpt100afpt100bfpt100 phototransistorfpt110afpt110bopto-28fpt100/a/b
|
PDF
|
OPTO-26
Abstract: FPT100 FPT100A FPT100B FPT101 FPT110 FPT110A FPT110B FPT120 FPT120A
Contextual Info: Phototransistors 14 Device No. Description VCF.O 1 0 nnA V Min Typ ICEÜ0 VCE 5.0 V mA Min Typ Max IC VCE sat H 20 mW/cm2 V Min Typ Max tr/tf Package /is No. Typ FPTIOO Plastic, D om e Lens G eneral P u rp o se 30 50 H — 5.0 m W /cm 2 0.2 1.4 Ic 500 ,iA
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+7fpt110fpt110afpt110bfpt120fpt120afpt120bopto-26
|
PDF
|
FPT100 phototransistor
Abstract: FPT100A FPT100B FPT101 FPT110A FPT100 FPT110 FPT110B FPT120 FPT120A
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+6fpt110fpt110afpt100 phototransistorfpt110bfpt120fpt120a
|
PDF
|
FPT100 phototransistor
Abstract: FPT100 phototransistor FPT 100 FPT100A FPT120 FPT100B FPT101 FPT110 FPT110A FPT110B
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+7fpt110fpt110afpt100/a/bfpt100 phototransistorphototransistor fpt 100fpt120fpt110b
|
PDF
|
FPT131
Abstract: FPT100A FPT100 FPT100B FPT101 FPT110 FPT110A FPT110B FPT120 FPT120A
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+7fpt110fpt110attl1/6-9016fpt131fpt110bfpt120fpt120a
|
PDF
|
OPTO-26
Abstract: FPT100 FPT100A FPT100B FPT101 FPT102 FPT110 FPT110B FPT120
Contextual Info: FAIRCHILD OPTOELECTRONICS OPTO PHOTO TRANSISTORS VCEO 1.0mA V Min Typ •c = DEVICE Item NO. Description ■CE lt VC E = 5.0V mA Min Typ Max v CE(sat) H = 20mW/cm2 V Min Typ Max tf/tf Typ Package No. MS 1 FPT100 Plastic, Dome Lens General Purpose 30 50 H = 5.0mW/cm2
|
OCR Scan
|
20mw/cm2fpt100opto-26fpt100a+8500/jafpt100b500mafpt101fpt102fpt110fpt110bfpt120
|
PDF
|
MAL100
Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
|
OCR Scan
|
cl138o-106fpt100fpt100a+8fpt100bfpt110fpt110amal100mel12mel31mel32transistor case to 106
|
PDF
|
MEL12
Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
|
OCR Scan
|
cl138o-106fpt100fpt100a+9fpt100bfpt110fpt110amel12mal100transistor case to 106mel32 photo transistormel11mel11a
|
PDF
|
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
|
OCR Scan
|
11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
|
PDF
|
WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
|
OCR Scan
|
rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
|
PDF
|
MEL12
Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Contextual Info: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A
|
OCR Scan
|
cl138o-106fpt100fpt100a+11fpt100bfpt110fpt110ao-106ffpt110bmel12mal100mel31mel32mel32 photo transistormel11
|
PDF
|
mw 137
Abstract: "mw 137" FPT-120 FPt100A pt136 FPT100 FPT100B FPT101 FPT110 FPT110B
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+7fpt110fpt110afpt120mw 137fpt-120pt136fpt110b
|
PDF
|
FPT100A
Abstract: pt136 FPT132 FPT100 mw 137 PT120 PT130 FPT100B FPT101 FPT110
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,
|
OCR Scan
|
fpt100fpt100afpt100bfpt101+8fpt110fpt110afpt137fpt132pt136mw 137pt120pt130
|
PDF
|
1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
|
OCR Scan
|
301pt1115302pt1115303pt1115311pt1110+15312pti110319pti110327pti110351pt1115353pt11151n524081n52428 zenersfc231178m12hm21l02a54175irs 9530 transistor10116dcbb105g962pc
|
PDF
|
|
|
