MEL12 Search Results

D78081

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /JPD78081,78082 8-BIT SIN GLE-CH IP M ICRO CO N TR O LLER DESCRIPTION The /iPD78081, 78082 are members of the /¿PD78083 subseries of the 78K/0 series microcontrollers. Besides a high-speed, high-performance CPU, these microcontrollers have on-chip ROM, RAM, I/O ports, 8-bit

2N4304 equivalent

Abstract: MEL12 2N4304 2N4302 MEU22 2N4303 meu22 silicon unijunction transistor MEF103 MEL11 MEL32
Contextual Info: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Ju n ction F .E .T .s REFEREN CE T A B L E Max. M in. B V qss V o lts Idss MEF103 MEF104 2N4302 30 40 40 0.2-20 0.2-1 0.9-4.5 500 1000 1500 10 1.5 4 50 30 4-20 2.0-5 2000

cso5

Abstract: MEL12 2SC 1209 1996P
Contextual Info: DATA SHEET LASER DIODE NDL7670P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7670P is a 1 310 nm DFB Distributed Feed-Back laser diode, that has a newly developed Multiple Quantum Well (MQW) structure, butterfly package module with optical isolator.

MAL100

Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30

MEL12

Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30

MEL12

Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Contextual Info: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A

Contextual Info: SPECIFICATION CONTROL DRAWING RECOMMENDED MOUNTING HOLE 1. MATING INTERFACE DIMENSIONS PER DYNAWAVE SPEC. AND MIL—STD—348 A—326 . 2 MD-21 SM P MALE 2 . ELECTRICAL FREQUENCY RANGE G H z - •DC TO 39.0 GHz. VSWR (MAX.) * -INSERTION LOSS (dB MAX.) HU-

Contextual Info: SPECIFICATION CONTROL DRAWING RECOM M ENDED MOUNTING HOLE 1. MATING INTERFACE DIMENSIONS PER DYNAWAVE SPEC. AND MIL—STD—348 A—326 .2 MD-21 SM P MALE 2 . ELECTRICAL •DC TO 39.0 GHz. ■1.02 + .003 x FGHz. .045 dB x ^ F G H z . ■50 250 ■N/A ■- 6 5 ° c TO -1-165 D c

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,

IRS540

Abstract: MP 3389 IEI-1213 IRS540-1 RL 782 relay 1202 smd diode ic337 IEI-1207 RADEOn equlpment transistor
Contextual Info: DESCRIPTION The~rPAl6MlIcMor~allthicN-channel power in 8 circult# and Gate Protection Dio4e Thermal ryQ skI;l 4ffay )If#krrffl c@sigl)tlg [HI fb\#. f%#~v Head, and 8~ on. FEATURES Direct driving is poooible by standarq (4 V driving II) possible) * Output voltage: Vo = 30 V MAX.

2N5458 equivalent

Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent
Contextual Info: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10

NEC uPA 63 H

Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’