15N120C3 Search Results

15N120C3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
15N120C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1

15N120C3 Price and Stock

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Rochester Electronics LLC HGTG15N120C3 IGBT 1200V 35A TO-247
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DigiKey	HGTG15N120C3	Bulk			74	1 - 10 - 100 $4.08 1000 $4.08 10000 $4.08	Buy Now
Rochester Electronics LLC HGT1S15N120C3 IGBT 1200V 35A TO-262
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DigiKey	HGT1S15N120C3	Bulk			80	1 - 10 - 100 $3.80 1000 $3.80 10000 $3.80	Buy Now
Rochester Electronics LLC HGT1S15N120C3S IGBT 1200V 35A TO-263AB
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DigiKey	HGT1S15N120C3S	Bulk			80	1 - 10 - 100 $3.80 1000 $3.80 10000 $3.80	Buy Now
Harris Semiconductor HGT1S15N120C3 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S15N120C3		3,604		1	1 - 10 - 100 $3.47 1000 $3.10 10000 $2.92	Buy Now
Harris Semiconductor HGT1S15N120C3S Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S15N120C3S		695		1	1 - 10 - 100 $3.47 1000 $3.10 10000 $2.92	Buy Now

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15N120C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
15N120C3 Contextual Info: 15N120C3, 15N120C3, 15N120C3, 15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	OCR Scan	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3	PDF
HGT1S15N120C3 Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C Contextual Info: 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	Original	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C	PDF
15N120C3D Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C Contextual Info: 15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance	Original	HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C	PDF
15N120C3D Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C Contextual Info: 15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 1-800-4-HARRIS 15N120C3D 15N120C3 LD26 RHRP15120 15N120C	PDF
15N120C3 Abstract: HGT1S15N120C3 HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG Contextual Info: S E M I C O N D U C T O R 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	Original	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns 15N120C3 HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG	PDF
Contextual Info: 15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The 15N120C3D is a MOS gated high voltage switch ing device combining the best features of MOSFETs and	OCR Scan	HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS	PDF
247EH Contextual Info: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h	OCR Scan		PDF
15N120C3 Abstract: TP15N120 15n120 Contextual Info: HAFRRIS 15N120C3, 15N120C3, 15N120C3, 15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	OCR Scan	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGTG15N120G3, HGT1S15N120C3 HGT1S15N120C3S 1-800-4-HARRIS 15N120C3 TP15N120 15n120	PDF