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Intersil Corporation G12N60C3D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	G12N60C3D		126			1 $5.85 10 $5.85 100 $3.61 1000 $3.61 10000 $3.61	Buy Now
Fairchild Semiconductor Corporation HGTG12N60C3D IGBT-Single 600V 24A 104W TO247-3 Tube
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Rochester Electronics	HGTG12N60C3D		36		1	1 - 10 - 100 $3.93 1000 $3.52 10000 $3.31	Buy Now
Harris Semiconductor HGTG12N60C3D IGBT-Single 600V 24A 104W TO247-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG12N60C3D		236		1	1 - 10 - 100 $3.93 1000 $3.52 10000 $3.31	Buy Now

G12N60C3D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
g12n60c3d Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 Contextual Info: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	hgtg12n60c3d 150oc ta49123 ta49061 +4210ns g12n60c3d ld26 rhrp1560	PDF
TG12N60C3D Abstract: g12n60c3d TG12N60 g12n G12N60 Contextual Info: G12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .	OCR Scan	hgtg12n60c3d 210ns tg12n60c3d g12n60c3d +3tg12n60 g12n g12n60	PDF
Contextual Info: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	hgtg12n60c3d 150oc ta49123 ta49061 +1210ns	PDF
Contextual Info: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss	Original	hgtg12n60c3d 210ns 150oc o-247 +2ta49123 1-800-4-harris	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
g12n60c3d Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C Contextual Info: G12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	OCR Scan	hgtg12n60c3d ta49123 ta49061 ta49117 +5g12n60c3d transistor no c110 c110 rhrp1560 g12n60c	PDF
G12N60C3D Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061 Contextual Info: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	hgtg12n60c3d 150oc ta49123 ta49061 +6210ns g12n60c3d g12n60 g12n60c g12n60c3 rhrp1560	PDF
G12N60C3D Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60 Contextual Info: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating	Original	hgtg12n60c3d 210ns 150oc o-247 +91-800-4-harris g12n60c3d ta49123 igbt 100a 150v ld26 rhrp1560 ta49061 g12n60c3 g12n60	PDF
g12n60c3d Abstract: hyperfast diode reference guide HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 g12n60c3 Contextual Info: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	hgtg12n60c3d 150oc ta49123 ta49061 +6210ns g12n60c3d hyperfast diode reference guide ld26 rhrp1560 g12n60c3	PDF