G20N120CN Search Results

G20N120CN

Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120
Contextual Info: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: G20N120CN S em iconductor October 1998 Data Sheet 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

G20N120CN

Abstract: HGTG20N120CN HGTG20N120CND LD26
Contextual Info: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

mj122

Abstract: G20N120CN HGTG20N120CN HGTG20N120CND LD26 g20n120
Contextual Info: G20N120CN Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device