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    COOLMOS Search Results

    COOLMOS Datasheets (3)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CoolMOS
    Infineon Technologies CoolMOS Brochure Original PDF 709.64KB 6
    CoolMOS
    Infineon Technologies CoolMOS C2 Advertisement Original PDF 63.33KB 1
    CoolMOS
    Infineon Technologies Cross Reference - CoolMOS Original PDF 24.85KB 8
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    COOLMOS Price and Stock

    IXYS Corporation

    IXYS Corporation IXKH35N60C5

    MOSFETs 35 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKH35N60C5 Tube 30
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    IXYS Corporation IXKC20N60C

    MOSFETs 14 Amps 600V 0.19 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKC20N60C Box 50
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    IXYS Corporation IXKH70N60C5

    MOSFETs 70 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKH70N60C5 Tube 300
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    IXYS Corporation IXKR47N60C5

    MOSFETs 47 Amps 600V 0.045 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKR47N60C5 Tube 300
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    IXYS Corporation IXKR40N60C

    MOSFETs 40 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKR40N60C Tube 300
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    COOLMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT77N60JC3

    Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


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    apt77n60jc3ot-227 PDF

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


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    40n60cisoplus247tm247tme153432+4to247adto247ad packagecoolmos power transistorisoplus247 PDF

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Contextual Info: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


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    75n60cot-227e72873sot-227 heatsink+475n60sot-227 package335absot-227 b" dimensions PDF

    APT0406

    Abstract: APT0502 solar converter
    Contextual Info: APTCV60TLM70T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    aptcv60tlm70t3gapt0406apt0502solar converter PDF

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    isoplus220tm25n80ce153432065b1+5728b1123b1coolmos power transistorpower mosfet 4600ups siemens PDF

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Contextual Info: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


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    spu01n60s5spd01n60s5p-to252p-to251-3-1+5spux7n60s5/spdx7n60s5q67040-s419301n60s501n60q67040-s4188 PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


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    spp02n60spp03n60spp04n60spp07n60+13spp11n60spp20n60spw11n60spw20n60spw47n60spp02n80mgf4919gsp*02n60spp11n80to-220 smdmgf1601mgf0905aspw11n80 PDF

    SIPC69N60C2

    Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2


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    sipc69n60c2q67050a4073-a0015443-n PDF

    tda4864

    Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
    Contextual Info: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1


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    ice1pd165gp-dso-16-100-150v1n4937+6mur115tda4864zero crossing detector mosfetiec555active harmonic filterinfineon mosfet parameter test PDF

    diode IN 34A

    Abstract: APT34N80B2C3 APT34N80LC3
    Contextual Info: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


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    apt34n80b2c3apt34n80lc3o-264o-247+1diode in 34a PDF

    c9015

    Abstract: mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015
    Contextual Info: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg


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    apt31n60bcsapt31n60scsapt31n60bcsgapt31n60scsg+6o-247c9015mosfet l 3055apt15d18a100r6015 PDF

    infineon 6r045

    Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
    Contextual Info: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r045cspg-to247-3q67045a50616r045+6infineon 6r045mosfet 6r0456r045 infineonpg-to-247-3jesd22ipw60r045 PDF

    SIPC26N60C2

    Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2


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    sipc26n60c2q67050a4087-a0015433n PDF

    SIPC10N60S5

    Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


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    sipc10n60s5q67050a4072-a0015353-n PDF

    SIPC06N60S5

    Abstract: Infineon CoolMOS
    Contextual Info: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


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    sipc06n60s55423ninfineon coolmos PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Contextual Info: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


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    zvt full bridgespp20n60two transistor forwardsmd transistor infineon+6spp07n60c2infineon coolmosspp20n60s5coolmosa boost dc to ac converter "380spp02n60s5 PDF

    85N60C

    Abstract: UPS SIEMENS E72873 ID100
    Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


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    85n60co-264e72873id100+220100315cups siemens PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


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    an-coolmos-07room14j1room1101an-coolmos-01+9an-coolmos-04spw17n80c2irfp450 mosfet full bridgetransistor smd v1 mosfetsiemens semiconductor 1988 ledsmps* zvt47n60s5 to247spn04n60c2spn01n60s5 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312 PDF

    9R120C

    Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
    Contextual Info: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 260 nC • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw90r120c3pg-to2479r120c9r120+4coolmos power transistoripw90r120c3 infineon900 v 36 a ipw90r120c3 infineonjesd22 PDF

    coolsettm-f2

    Abstract: ICE2A380 ICE2A380P2 coolsettmf2 K X365
    Contextual Info: D a t a s h e e t V e r s i o n 0 .0 , 2 3 S e p 2 00 4 CoolSET -F2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F2 ICE2A380P2 Revision History:


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    ice2a380p2coolsettm-f2ice2a380coolsettmf2+1k x365 PDF

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipa60r125cppg-to220-3-31sp0000952756r125p+6transistor 6r125pdf 331 transistortransistor df 331ca82jesd226r125 PDF

    6r165p

    Abstract: 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483
    Contextual Info: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r165cppg-to247-3-1sp0000954836r165p+36r165pg-to247jesd22 PDF

    6r385P

    Abstract: 6r385p infineon 6r385 IPA60R385CP JESD22 PG-TO220-3-31 SP000089316 IPA60R385 D-52
    Contextual Info: IPA60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x QG 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipa60r385cppg-to220-3-31sp0000893166r385p+56r385p infineon6r385jesd22ipa60r385d-52 PDF