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    COOLMOS Search Results

    COOLMOS Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CoolMOS
    		Infineon Technologies CoolMOS Brochure Original PDF 709.64KB 6
    CoolMOS
    		Infineon Technologies CoolMOS C2 Advertisement Original PDF 63.33KB 1
    CoolMOS
    		Infineon Technologies Cross Reference - CoolMOS Original PDF 24.85KB 8
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    COOLMOS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB60R125CPATMA1 (COOLMOS SERIES)

    Mosfet, N Ch, 650V, 25A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPB60R125CPATMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPB60R125CPATMA1 (COOLMOS SERIES) Bulk 3,549 1
    • 1 $3.14
    • 10 $3.14
    • 100 $3.14
    • 1000 $3.14
    • 10000 $3.14
    		Buy Now

    Infineon Technologies AG IPN60R360P7SATMA1 (COOLMOS P7)

    Mosfet, N-Ch, 600V, 9A, 150Deg C, 7W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPN60R360P7SATMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPN60R360P7SATMA1 (COOLMOS P7) Cut Tape 2,835 1
    • 1 $0.30
    • 10 $0.30
    • 100 $0.30
    • 1000 $0.30
    • 10000 $0.30
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    Infineon Technologies AG IPD60R600PFD7SAUMA1 (COOLMOSPFD7 SJ)

    Mosfet, N-Ch, 600V, 6A, To-252 Rohs Compliant: Yes |Infineon IPD60R600PFD7SAUMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPD60R600PFD7SAUMA1 (COOLMOSPFD7 SJ) Cut Tape 2,500 1
    • 1 $1.49
    • 10 $1.00
    • 100 $0.73
    • 1000 $0.56
    • 10000 $0.56
    		Buy Now

    Infineon Technologies AG IPD60R210PFD7SAUMA1 (COOLMOS PFD7 SJ)

    Mosfet, N-Ch, 600V, 16A, To-252/Dpak Rohs Compliant: Yes |Infineon IPD60R210PFD7SAUMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPD60R210PFD7SAUMA1 (COOLMOS PFD7 SJ) Cut Tape 2,398 1
    • 1 $1.34
    • 10 $1.27
    • 100 $1.27
    • 1000 $1.27
    • 10000 $1.27
    		Buy Now

    Infineon Technologies AG IPP60R125C6XKSA1 (COOLMOS C6)

    Mosfet, N-Ch, 600V, 30A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPP60R125C6XKSA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPP60R125C6XKSA1 (COOLMOS C6) Bulk 1,909 1
    • 1 $6.37
    • 10 $5.54
    • 100 $3.65
    • 1000 $3.23
    • 10000 $3.23
    		Buy Now
    Find more COOLMOS price and stock on Findchips.com

    COOLMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT77N60JC3

    Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


    Original     		APT77N60JC3 OT-227 APT77N60JC3 PDF

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 PDF

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Contextual Info: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


    Original     		75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions PDF

    APT0406

    Abstract: APT0502 solar converter
    Contextual Info: APTCV60TLM70T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		APTCV60TLM70T3G APT0406 APT0502 solar converter PDF

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C PDF

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Contextual Info: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 PDF

    SIPC69N60C2

    Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2


    Original     		SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2 PDF

    tda4864

    Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
    Contextual Info: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1


    Original     		ICE1PD165G P-DSO-16-10 0-150V 1N4937 MUR115 TDA4864 tda4864 zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test PDF

    diode IN 34A

    Abstract: APT34N80B2C3 APT34N80LC3
    Contextual Info: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


    Original     		APT34N80B2C3 APT34N80LC3 O-264 O-264 APT34N80B2C3 O-247 diode IN 34A APT34N80LC3 PDF

    c9015

    Abstract: mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015
    Contextual Info: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg


    Original     		APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* O-247 c9015 mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015 PDF

    infineon 6r045

    Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
    Contextual Info: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CS PG-TO247-3 Q67045A5061 6R045 infineon 6r045 mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045 PDF

    SIPC26N60C2

    Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2


    Original     		SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2 PDF

    SIPC10N60S5

    Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


    Original     		SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5 PDF

    SIPC06N60S5

    Abstract: Infineon CoolMOS
    Contextual Info: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


    Original     		SIPC06N60S5 5423N, SIPC06N60S5 Infineon CoolMOS PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Contextual Info: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    85N60C

    Abstract: UPS SIEMENS E72873 ID100
    Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		85N60C O-264 E72873 ID100 20100315c 85N60C UPS SIEMENS E72873 ID100 PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    9R120C

    Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
    Contextual Info: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 260 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22 PDF

    coolsettm-f2

    Abstract: ICE2A380 ICE2A380P2 coolsettmf2 K X365
    Contextual Info: D a t a s h e e t V e r s i o n 0 .0 , 2 3 S e p 2 00 4 CoolSET -F2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F2 ICE2A380P2 Revision History:


    Original     		ICE2A380P2 coolsettm-f2 ICE2A380 ICE2A380P2 coolsettmf2 K X365 PDF

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125 PDF

    6r165p

    Abstract: 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483
    Contextual Info: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R165CP PG-TO247-3-1 SP000095483 6R165P 6r165p 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483 PDF

    6r385P

    Abstract: 6r385p infineon 6r385 IPA60R385CP JESD22 PG-TO220-3-31 SP000089316 IPA60R385 D-52
    Contextual Info: IPA60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x QG 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R385CP PG-TO220-3-31 SP000089316 6R385P 6r385P 6r385p infineon 6r385 IPA60R385CP JESD22 PG-TO220-3-31 SP000089316 IPA60R385 D-52 PDF