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    6R125 Search Results

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    Bourns Inc 4116R-1-250

    Res Thick Film NET 25 Ohm 1 Ohm 2.25W ±250ppm/°C ISOL Molded 16-Pin DIP Pin Thru-Hole
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    ITT Interconnect Solutions MS3106R12-5P

    Circular MIL Spec Connector ER 1C 1#12 SKT PLUG
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    Master Electronics MS3106R12-5P
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    PEI Genesis MS3106R12-5P
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    Bourns Inc 4116R-1-253F

    Res Array 25K Ohm 8 Res 16-DIP
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    Master Electronics 4116R-1-253F
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    Bourns Inc 4116R-1-251

    Res Thick Film NET 250 Ohm 2% 2.25W ±100ppm/C ISOL Molded 16-Pin DIP Pin Thru-Hole
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    Master Electronics 4116R-1-251
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    Bourns Inc 4116R-1-253

    Res Thick Film NET 25K Ohm 2% 2.25W ±100ppm/C ISOL Molded 16-Pin DIP Pin Thru-Hole
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    Master Electronics 4116R-1-253
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    Avnet Americas 4116R-1-253 Tube 8 Weeks 2,000
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    6R125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipa60r125cppg-to220-3-31sp0000952756r125p+6transistor 6r125pdf 331 transistortransistor df 331ca82jesd226r125 PDF

    6r125p

    Abstract: transistor 6R125P PG-TO-247-3-1
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r125cppg-to247-3-1sp0000884896r125p+2transistor 6r125ppg-to-247-3-1 PDF

    6R125

    Abstract: 6R125C6
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


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    ipx60r125c6ipa60r125c6ipb60r125c6ipp60r125c6+3ipw60r125c66r1256r125c6 PDF

    6r125c6

    Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6


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    ipx60r125c6ipa60r125c6ipb60r125c6ipp60r125c6+7ipw60r125c66r125c6mosfet transistor smd marking code a1infineon to-220 date code markingmosfet transistor smd marking code 11to247 pcb footprintjesd22 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82
    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipp60r125cppg-to220sp0000884886r125p+4transistor 6r125p6r125jesd22ca82 PDF

    6r125p

    Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r125cppg-to247-3-1sp0000884896r125p+5transistor 6r125pbr a 708jesd22ca826r125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
    Contextual Info: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability


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    ipa60r125cppg-to220sp0000952756r125p+7transistor 6r125p6r1256r125p transistorjesd22c25 diode to220d16 marking code transistoripa60r125 PDF

    6r125p

    Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r125cppg-to247-3-1sp0000884896r125p+4transistor 6r125pjesd22ca826r125 PDF

    6r125p

    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipp60r125cppg-to220sp0000884886r125p PDF

    6r125c6

    Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


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    ipx60r125c6ipa60r125c6ipb60r125c6ipp60r125c6+6ipw60r125c66r125c66r125marking code br smd transistortransistor 600vjesd22 PDF

    IPB60R125CP

    Abstract: 6r125p
    Contextual Info: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipb60r125cppg-to263sp0000884886r125p PDF

    6r125p

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description


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    ipx60r125p6ipw60r125p6ipp60r125p6ipa60r125p6+3o-247o-2206r125p PDF

    6r125p

    Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP
    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipp60r125cppg-to220-3-1sp0000884886r125p+5transistor 6r125p6r1250380rmosfet marking code 7vipp60r125cp 6r125p PDF

    6r125c6

    Abstract: IPP60R125C6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


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    ipx60r125c6ipa60r125c6ipb60r125c6ipp60r125c6+6ipw60r125c66r125c66r125c6 transistortransistor smd marking codejesd22 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82
    Contextual Info: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipi60r125cppg-to220pg-to2626r125p+4transistor 6r125p6r125jesd22ca82 PDF

    6R125

    Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R
    Contextual Info: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipb60r125cppg-to263ipp60r125cppg-to220+8sp0000884886r125p6r125transistor 6r125psmd marking code f16jesd22ca82ipp60r PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode
    Contextual Info: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r125cppg-to247-3-1sp0000884896r125p+4transistor 6r125p6r125jesd22p diode PDF

    DF 331 TRANSISTOR

    Abstract: 6r125p 6R125 transistor df 331 transistor 6R125P
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipa60r125cppg-to220-3-31sp0000952756r125p+4df 331 transistor6r125transistor df 331transistor 6r125p PDF

    6r125p

    Abstract: 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82
    Contextual Info: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    ipw60r125cppg-to247-3-1sp0000884896r125p+6009-134-ao-2476r125transistor 6r125pjesd22ca82 PDF