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    SPW47N60 Datasheets (13)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPW47N60
    		Infineon Technologies TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,47A I(D),TO-247VAR Original PDF 132.83KB 13
    SPW47N60C2
    		Infineon Technologies Cool MOS Power Transistor Original PDF 122.25KB 11
    SPW47N60C2
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07Ohm, 47.0A Original PDF 146.76KB 12
    SPW47N60C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF 245.08KB 13
    SPW47N60C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF 118.46KB 13
    SPW47N60C3
    		Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 70.0 mOhm; ID(max) @ TC=25°C: 47.0 A; IDpuls (max): 141.0 A; Original PDF 843.99KB 14
    SPW47N60C3
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07, 47.0A Original PDF 79.83KB 6
    SPW47N60C3FKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 47A TO-247 Original PDF 829.02KB
    SPW47N60CFD
    		Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 83.0 mOhm; ID(max) @ TC=25°C: 46.0 A; IDpuls (max): 118.0 A; Original PDF 553.54KB 13
    SPW47N60CFD
    		Infineon Technologies CoolMOS Power Transistor Original PDF 386.73KB 12
    SPW47N60CFDFKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 46A TO-247 Original PDF 617.61KB
    SPW47N60S5
    		Infineon Technologies Cool MOS Power Transistor Original PDF 237.31KB 11
    SPW47N60S5
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07Ohm, 47.0A Original PDF 104.6KB 9
    SF Impression Pixel

    SPW47N60 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPW47N60C3

    Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPW47N60C3 123 1
    • 1 $11.32
    • 10 $10.93
    • 100 $10.42
    • 1000 $8.11
    • 10000 $8.11
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    Mouser Electronics SPW47N60C3 7,861
    • 1 $13.70
    • 10 $7.64
    • 100 $7.27
    • 1000 $7.27
    • 10000 $7.27
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    Bristol Electronics SPW47N60C3 525
    • 1 -
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    Quest Components () SPW47N60C3 1,246
    • 1 $17.27
    • 10 $17.27
    • 100 $17.27
    • 1000 $11.52
    • 10000 $11.52
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    SPW47N60C3 10
    • 1 $14.54
    • 10 $10.90
    • 100 $10.90
    • 1000 $10.90
    • 10000 $10.90
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    SPW47N60C3 2
    • 1 $14.63
    • 10 $13.65
    • 100 $13.65
    • 1000 $13.65
    • 10000 $13.65
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    ComSIT USA SPW47N60C3 250
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    Win Source Electronics SPW47N60C3 32,081
    • 1 -
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    • 100 $3.44
    • 1000 $3.44
    • 10000 $3.44
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    Infineon Technologies AG SPW47N60C3FKSA1

    Transistor: N-MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPW47N60C3FKSA1 30
    • 1 -
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    • 100 $7.98
    • 1000 $7.98
    • 10000 $7.98
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    Avnet Americas () SPW47N60C3FKSA1 Tube 42,181 13 Weeks 1
    • 1 $11.03
    • 10 $7.31
    • 100 $6.98
    • 1000 $6.98
    • 10000 $6.98
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    SPW47N60C3FKSA1 Bulk 1
    • 1 $14.80
    • 10 $12.85
    • 100 $8.24
    • 1000 $7.51
    • 10000 $7.51
    		Get Quote
    Newark SPW47N60C3FKSA1 Bulk 2,832 1
    • 1 $14.80
    • 10 $12.85
    • 100 $8.24
    • 1000 $7.51
    • 10000 $7.51
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    EBV Elektronik SPW47N60C3FKSA1 31,200 14 Weeks 240
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    Win Source Electronics SPW47N60C3FKSA1 29,490
    • 1 -
    • 10 -
    • 100 $3.44
    • 1000 $3.44
    • 10000 $3.44
    		Buy Now

    Infineon Technologies AG SPW47N60CFDFKSA1

    Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPW47N60CFDFKSA1 1
    • 1 $14.76
    • 10 $11.76
    • 100 $10.52
    • 1000 $10.52
    • 10000 $10.52
    		Get Quote
    Avnet Americas SPW47N60CFDFKSA1 Tube 11 Weeks 240
    • 1 -
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    • 1000 $7.72
    • 10000 $7.59
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    EBV Elektronik SPW47N60CFDFKSA1 16 Weeks 240
    • 1 -
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    Infineon Technologies AG SPW47N60CFD

    MOSFETs N-Ch 600V 46A TO247-3 CoolMOS CFD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPW47N60CFD 528
    • 1 $14.97
    • 10 $11.40
    • 100 $9.50
    • 1000 $8.47
    • 10000 $8.47
    		Buy Now
    Quest Components SPW47N60CFD 2
    • 1 $17.57
    • 10 $17.57
    • 100 $17.57
    • 1000 $17.57
    • 10000 $17.57
    		Buy Now

    Infineon Technologies AG SPW47N60C3FKSA1.

    Pwr Mosfet, N Channel, 650V, 47A; |Infineon Technologies SPW47N60C3FKSA1.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SPW47N60C3FKSA1. Bulk 1
    • 1 $13.70
    • 10 $11.89
    • 100 $7.63
    • 1000 $6.95
    • 10000 $6.95
    		Buy Now
    Find more SPW47N60 price and stock on Findchips.com

    SPW47N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SPW47N60C3

    Abstract: 47n60c3
    Contextual Info: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		spw47n60c3p-to247q67040-s449147n60c3 PDF

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60s5p-to247q67040-s424047n60s5+147n60 PDF

    47n60cfd

    Abstract: 47N60 SPW47N60CFD marking code s46 47N60C
    Contextual Info: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		spw47n60cfdpg-to247q67045a505147n60cfd+347n60marking code s4647n60c PDF

    47N60S5

    Abstract: SPW47N60S5
    Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60s5p-to247q67040-s424047n60s5 PDF

    47N60C2

    Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
    Contextual Info: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		spw47n60c2p-to247q67040-s432347n60c2+42002-08-1247n60sdp06s60tid10 PDF

    47n60cfd

    Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
    Contextual Info: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		spw47n60cfdpg-to247q67045a505147n60cfd+4s47a47n60cjesd2247n60 PDF

    47n60c3

    Abstract: SPW47N60C3 SDP06S60 617 300
    Contextual Info: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60c3p-to247q67040-s449147n60c3+2sdp06s60617 300 PDF

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Contextual Info: SPW47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		spw47n60s5p-to247spwx0n60s5q67040-s4240+447n60s547n60s5 to24747n6047n60s PDF

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
    Contextual Info: SPW47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		spw47n60cfdpg-to247q67045a505147n60cfd+347n60jesd22marking code s46 PDF

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Contextual Info: SPW47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		spw47n60s5spwx0n60s5p-to24747n60s5+5q67040-s424047n60f47adt 9447n60s5 to247 PDF

    47n60s5

    Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
    Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated


    Original     		spw47n60s5p-to247q67040-s424047n60s5+347n60spw47n6047n60s PDF

    47N60S5

    Abstract: 47n60 SPW47N60S5
    Contextual Info: SPW47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances


    Original     		spw47n60s5spwx0n60s5p-to24747n60s5+2q67040-s414047n60 PDF

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60c3p-to247q67040-s449147n60c3+247n60csdp06s60 PDF

    47N60C2

    Abstract: SPW47N60C2 SDP06S60
    Contextual Info: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		spw47n60c2p-to247q67040-s432347n60c2+1sdp06s60 PDF

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
    Contextual Info: SPW47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances


    Original     		spw47n60c3p-to247q67040-s449147n60c3+447n60sdp06s60tp 2116pulse-10 PDF

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
    Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60c3p-to247q67040-s449147n60c3+347n60sdp06s6047n60c PDF

    47N60S5

    Abstract: 47N60 SPW47N60S5 spw47n60
    Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60s5p-to247q67040-s424047n60s5+247n60spw47n60 PDF

    47n60c3

    Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
    Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		spw47n60c3p-to247q67040-s449147n60c3+347n6047n60c47n60c3 infineon PDF

    47n60c3

    Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
    Contextual Info: SPW47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω


    Original     		spw47n60c3p-to24747n60c347n60c+3p-to-24747n60c3 infineon2449 PDF

    47N60C2

    Abstract: SPW47N60C2 47N60C SDP06S60 W47A
    Contextual Info: Preliminary data SPW47N60C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • Product Summary New revolutionary high voltage technology · Worldwide best RDS on in TO 247 VDS 600 V 0.07 W 47 A · Ultra low gate charge R DS(on) · Periodic avalanche rated


    Original     		spw47n60c2p-to247q67040-s432347n60c2+347n60csdp06s60w47a PDF

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051
    Contextual Info: SPW47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		spw47n60cfdpg-to247q67045a505147n60cfd+4009-134-ao-24747n60jesd22 PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		spp02n60spp03n60spp04n60spp07n60+13spp11n60spp20n60spw11n60spw20n60spw47n60spp02n80mgf4919gsp*02n60spp11n80to-220 smdmgf1601mgf0905aspw11n80 PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Contextual Info: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		zvt full bridgespp20n60two transistor forwardsmd transistor infineon+6spp07n60c2infineon coolmosspp20n60s5coolmosa boost dc to ac converter "380spp02n60s5 PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		an-coolmos-07room14j1room1101an-coolmos-01+9an-coolmos-04spw17n80c2irfp450 mosfet full bridgetransistor smd v1 mosfetsiemens semiconductor 1988 ledsmps* zvt47n60s5 to247spn04n60c2spn01n60s5 PDF