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    MGF4319E Datasheets Context Search

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    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		spp02n60spp03n60spp04n60spp07n60+13spp11n60spp20n60spw11n60spw20n60spw47n60spp02n80mgf4919gsp*02n60spp11n80to-220 smdmgf1601mgf0905aspw11n80 PDF

    MGF4310

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .


    OCR Scan     		4310ef4319emgf4310emgf4314e+3mgf4318egf4319emgf4310 PDF