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    SPP11N60 Search Results

    SPP11N60 Datasheets (15)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPP11N60C2
    Infineon Technologies Cool MOS Power Transistor Original PDF 161.93KB 14
    SPP11N60C2
    Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A Original PDF 164.09KB 12
    SPP11N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 156.67KB 15
    SPP11N60C3
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF 664.86KB 16
    SPP11N60C3
    Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A Original PDF 195.57KB 14
    SPP11N60C3
    Infineon Technologies Cool MOS Power Amp., 650V 11A 125W, MOS-FET N-Channel enhanced Original PDF 357.22KB 14
    SPP11N60C3XKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220AB Original PDF 648.98KB
    SPP11N60CFD
    Infineon Technologies Cool MOS Power Transistor Original PDF 152.07KB 12
    SPP11N60CFDHKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-220 Original PDF 641.37KB
    SPP11N60CFDXKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220 Original PDF 641.37KB
    SPP11N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 278.26KB 12
    SPP11N60S5
    Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A Original PDF 142.04KB 10
    SPP11N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 139.62KB 10
    SPP11N60S5HKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220AB Original PDF 472.89KB
    SPP11N60S5XKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF 472.89KB
    SF Impression Pixel

    SPP11N60 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPP11N60CFDXKSA1

    Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
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    Verical SPP11N60CFDXKSA1 300 300
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    TME SPP11N60CFDXKSA1 500
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    EBV Elektronik SPP11N60CFDXKSA1 9 Weeks 500
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    Vyrian SPP11N60CFDXKSA1 3,927
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    Infineon Technologies AG SPP11N60C3XKSA1

    Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
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    Verical SPP11N60C3XKSA1 240 194
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    Avnet Americas SPP11N60C3XKSA1 Tube 450 500
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    Newark SPP11N60C3XKSA1 Bulk 228 1
    • 1 $4.00
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    • 100 $2.09
    • 1000 $1.85
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    Rochester Electronics SPP11N60C3XKSA1 240 1
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    TME SPP11N60C3XKSA1 1
    • 1 $3.24
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    Ameya Holding Limited SPP11N60C3XKSA1 7,500
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    EBV Elektronik SPP11N60C3XKSA1 51 Weeks 500
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    Vyrian SPP11N60C3XKSA1 7,672
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    Infineon Technologies AG SPP11N60C3HKSA1

    Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP11N60C3HKSA1)
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    Infineon Technologies AG SPP11N60CFDHKSA1

    Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP11N60CFDHKSA1)
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    Vyrian SPP11N60CFDHKSA1 6,805
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    Infineon Technologies AG SPP11N60S5HKSA1

    Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP11N60S5HKSA1)
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    Vyrian SPP11N60S5HKSA1 3,876
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    SPP11N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original
    spp11n60c3spb11n60c3spi11n60c3spa11n60c3+10p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-111n60c3transistor 11n60c311n60c11n60q67040-s4395q67040-s4396 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original
    spp11n60s5spb11n60s5spi11n60s5p-to262+7p-to263-3-2p-to220-3-1q67040-s419811n60s5 equivalent11n60s5transistor smd marking code 7adsa003760 PDF

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original
    spp11n60c3spi11n60c3spa11n60c3e8185+8p-to220-3-31pg-to220fppg-to262pg-to220pg-to-220-3-3111n60c3transistor 11n60c3spa11n60c3e8185 PDF

    Contextual Info: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original
    spp11n60cfdpg-to220-3-111n60cfdq67040-s4618 PDF

    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original
    spp11n60c3spb11n60c3spi11n60c3p-to262-3-1+2p-to263-3-2p-to220-3-1 PDF

    11n60cfd

    Abstract: PG-TO-220-3-1 SPP11N60CFD
    Contextual Info: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original
    spp11n60cfdpg-to220q67040-s461811n60cfd+1pg-to-220-3-1 PDF

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original
    spp11n60c3spi11n60c3spa11n60c3e8185+12pg-to220fppg-to262pg-to220p-to220-3-31pg-to-220-3-3111n60c311n60cspa11n60c3 equivalentspa11n60c3e818511n60spd06s60transistor 11n60c3 PDF

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Contextual Info: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original
    spi11n60s5spp11n60s5spb11n60s5p-to262+9p-to263-3-2p-to220-3-1q67040-s419811n60s511n60s5 equivalenttransistor smd marking code 7atransistor smd 2x yq67040-s4338transistor 11n60s5 PDF

    11N60C

    Abstract: 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1
    Contextual Info: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original
    spp11n60cfdpg-to220q67040-s461811n60cfd+311n60c11n60pg-to-220-3-1 PDF

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original
    spp11n60c3spi11n60c3spa11n60c3e8185+12pg-to220fppg-to262pg-to220p-to220-3-31pg-to-220-3-3111n60c3spa11n60c3e818511n60cspa11n60c3 equivalent11n60transistor 11n60c3q67040-s4395 PDF

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Contextual Info: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5p-to220-3-1+6p-to263-3-211n60s5q67040-s419811n60s11n60smd case footprint PDF

    Contextual Info: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original
    spp11n60cfdpg-to220q67040-s461811n60cfd PDF

    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original
    spp11n60c3spb11n60c3spi11n60c3spa11n60c3+4p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original
    spp11n60c2spb11n60c2spa11n60c2p-to220-3-31+5p-to263-3-2p-to220-3-111n60c2transistor 11n60c2spa 11n60c2 PDF

    Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original
    spp11n60s5spb11n60s5spi11n60s5p-to262+2p-to263-3-2p-to220-3-1 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original
    spp11n60c3spb11n60c3spi11n60c3spa11n60c3+6p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-111n60c3transistor 11n60c3 PDF

    SP000216312

    Abstract: 11N6
    Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original
    spp11n60c3spi11n60c3spa11n60c3p-to220-3-31+6pg-to220-3-31pg-to262-3pg-to220pg-to-220-3-31sp00021631211n6 PDF

    transistor 11n60c3

    Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C
    Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original
    spp11n60c3spi11n60c3spa11n60c3p-to220-3-31+8pg-to220-3-31pg-to262-3-1pg-to220-3-1pg-to-220-3-31transistor 11n60c3q67040-s440811n60c311n60c PDF

    11N60S5

    Abstract: SPI11N60S5 SPP11N60S5
    Contextual Info: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    spp11n60s5spi11n60s5pg-to262pg-to220+3p-to220-3-1q67040-s419811n60s5 PDF

    11N60S5 equivalent

    Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
    Contextual Info: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original
    spi11n60s5spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5+10p-to220-3-111n60s5q67040-s4198p-to263-3-211n60s5 equivalent171311n60smd marking code 10transistor smd marking code 7af11a 095 PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original
    spp11n60c3spb11n60c3spi11n60c3p-to262-3-1+9p-to263-3-2p-to220-3-1q67040-s439511n60c311n60c11n60q67042-s4403transistor smd marking code 7aq67040-s4396 PDF

    68w Transistor smd

    Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent
    Contextual Info: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated


    Original
    spp11n60c2spb11n60c2p-to263-3-2p-to220-3-1+11q67040-s429511n60c2q67040-s429868w transistor smdtransistor smd 68wmarking code 68w68w smdsmd 68wtransistor 68wtransistor 68w smd11n60c2 equivalent PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06
    Contextual Info: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    spp11n60s5spi11n60s5pg-to262pg-to220+6p-to220-3-1q67040-s419811n60s5transistor smd marking code 7a20tpar06 PDF

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    spp11n60c3spb11n60c3spi11n60c3spa11n60c3+10p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3111n60c3transistor 11n60c311n60cq67040-s439511n60 PDF