11N60S Search Results

11N60S5

Abstract: SPI11N60S5
Contextual Info: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1

11N60S5 equivalent

Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
Contextual Info: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

SPW11N60S5

Abstract: 06161L 11N60S5 equivalent 11N60S5
Contextual Info: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38

11N60S5

Abstract: SPW11N60S5
Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

AR1010

Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

11N60S5 equivalent

Abstract: 11N60S5 SPW11N60S5
Contextual Info: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

11N60S5

Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
Contextual Info: 11N60S5 11N60S5, 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances

11n60s

Abstract: 11n60 SMD CASE footprint
Contextual Info: 11N60S5 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

IXAN0040

Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
Contextual Info: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power

Contextual Info: SIEMENS 11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:

Contextual Info: 11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS 0n Available Screened To MIL-S-19500, TX, TXV And S

Contextual Info: 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID

Contextual Info: 11N60S5, 11N60S5 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

11N60

Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
Contextual Info: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1

11N60S5

Abstract: SPI11N60S5 SPP11N60S5
Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances

11N60S5 equivalent

Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
Contextual Info: 11N60S5 Preliminary data 11N60S5, 11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·

TRANSISTOR SMD MARKING CODE 7A

Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06
Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances

siemens 350 98

Abstract: 11N60S5 SPW11N60S5
Contextual Info: 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity

Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated • Ultra low effective capacitances

TRANSISTOR SMD MARKING CODE 7A

Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
Contextual Info: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

CTX16-16926

Abstract: FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components
Contextual Info: UCC28600 120-W Evaluation Module User's Guide October 2006 Power Supply MAN SLUU256A UCC28600 120-W Evaluation Module User's Guide Literature Number: SLUU256A August 2006 – Revised October 2006 User's Guide SLUU256A – August 2006 – Revised October 2006

11n60s5

Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262-3 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances

Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances