SPP02N60 Search Results

SPP02N60 Datasheets (12)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPP02N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF	285.21KB	12
SPP02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=3.00 ?, 1.8A	Original	PDF	160.19KB	11
SPP02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	142.26KB	13
SPP02N60C3HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A TO-220AB	Original	PDF	484.26KB
SPP02N60C3IN	Infineon Technologies	N-CHANNEL POWER MOSFET	Original	PDF	434.09KB
SPP02N60C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY	Original	PDF	484.26KB
SPP02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	309KB	10
SPP02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	251.22KB	10
SPP02N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=3.00 ?, 1.8A	Original	PDF	116.74KB	9
SPP02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	119.01KB	9
SPP02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPP02N60S5HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-220	Original	PDF	465.81KB

SPP02N60 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPP02N60C3XKSA1 Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPP02N60C3XKSA1		64,250		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		48,500		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		16,000		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		13,500		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		3,614		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		1,500		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
	SPP02N60C3XKSA1		850		597	1 - 10 - 100 - 1000 $0.58 10000 $0.52	Buy Now
Rochester Electronics	SPP02N60C3XKSA1		148,734		1	1 - 10 - 100 $0.56 1000 $0.46 10000 $0.41	Buy Now
Chip 1 Exchange	SPP02N60C3XKSA1		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP02N60C3XKSA1		8,202			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP02N60S5 Trans MOSFET N-CH 600V 1.8A Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPP02N60S5		4,500		493	1 - 10 - 100 - 1000 $0.63 10000 $0.56	Buy Now
	SPP02N60S5		500		493	1 - 10 - 100 - 1000 $0.63 10000 $0.56	Buy Now
Rochester Electronics	SPP02N60S5		5,264		1	1 - 10 - 100 $0.61 1000 $0.51 10000 $0.45	Buy Now
Infineon Technologies AG SPP02N60C3HKSA1 Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP02N60C3HKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP02N60C3HKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP02N60C3HKSA1		4,880			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP02N60C3 Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-220C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPP02N60C3		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SPP02N60C3		404			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP02N60C3IN MOSFET N-Channel 600V 1.8A (Tc) TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPP02N60C3IN		505		1	1 - 10 - 100 $0.63 1000 $0.53 10000 $0.47	Buy Now

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SPP02N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 Contextual Info: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +5q67040-s4181 02n60s5 transistor 02n60s5 02n60 q67040-s4212	PDF
02N60C3 Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +7q67040-s4392 q67040-s4393 02n60c3 smd diode marking 20 smd transistor marking 03 02n60 250td	PDF
V6 marking code Abstract: diode marking v6 Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +4q67040-s4392 q67040-s4393 v6 marking code diode marking v6	PDF
02N60S5 Abstract: SPB02N60S5 SPP02N60S5 Contextual Info: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +302n60s5 q67040-s4181 p-to263-3-2	PDF
02N60 Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +5q67040-s4392 02n60c3 02n60 sp*02n60 marking code v6 diode	PDF
Q67040-S4181 Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2 Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +7q67040-s4181 02n60s5 02n60 q67040s4181 q67040-s4212 transistor 02n60s5 p-to-263-3-2	PDF
02N60C3 Abstract: SPP02N60C3 SPB02N60C3 02n60c Contextual Info: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 02n60c3 02n60c	PDF
SPP02N60S5 Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +8sppx5n60s5/spbx5n60s5 q67040-s4181 02n60s5 k 117 smd diode 44a spbx5n60s5 02n60 transistor 02n60s5	PDF
02N60C3 Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 q67040-s4393 02n60c3	PDF
SPB02N60S5 Abstract: SPP02N60S5 02N60S5 siemens 230 98 O Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +4p-to263-3-2 02n60s5 q67040-s4181 siemens 230 98 o	PDF
SPP02N60S5 Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp02n60s5 p-to220-3-1 pg-to220-3-1 q67040-s4181 +102n60s5	PDF
SPB02N60S5 Abstract: SPP02N60S5 02N60 02N60S5 02n60s Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +502n60s5 q67040-s4181 p-to263-3-2 02n60 02n60s	PDF
SPB02N60S5 Abstract: SPP02N60S5 Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4181 q67040-s4212	PDF
02N60C3 Abstract: SPB02N60C3 SPP02N60C3 Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +2q67040-s4392 02n60c3	PDF

SPP02N60S5 Abstract: 02N60S5 Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1	Original	spp02n60s5 pg-to220 p-to220-3-1 q67040-s4181 +102n60s5	PDF
02N60C3 Abstract: SPB02N60C3 SPP02N60C3 02N60 Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 02n60c3 02n60	PDF
Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-t0220-3-1 +302n60s5 q67040-s4181 p-t0263-3-2	PDF
Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1	Original	spp02n60s5 pg-to220 p-to220-3-1 q67040-s4181 +102n60s5	PDF
SPB02N60S5 Abstract: SPP02N60S5 Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO263-3-2	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4181 q67040-s4212	PDF
SMD Diode V6 marking code Abstract: SPP02N60C3 Contextual Info: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 q67040-s4393 smd diode v6 marking code	PDF
P-TO263-3-2 Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5 Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4181 q67040-s4212	PDF
SPP02N60S5 Abstract: 02n60s5 Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1	Original	spp02n60s5 pg-to220 p-to220-3-1 q67040-s4181 +102n60s5	PDF
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	spp02n60 spp03n60 spp04n60 spp07n60 +13spp11n60 spp20n60 spw11n60 spw20n60 spw47n60 spp02n80 mgf4919g sp*02n60 spp11n80 to-220 smd mgf1601 mgf0905a spw11n80	PDF
ZVT full bridge Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5 Contextual Info: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.	Original	zvt full bridge spp20n60 two transistor forward smd transistor infineon +6spp07n60c2 infineon coolmos spp20n60s5 coolmos a boost dc to ac converter "380 spp02n60s5	PDF

SPP02N60 Search Results

SPP02N60 Datasheets (12)

SPP02N60 Price and Stock

Infineon Technologies AG SPP02N60C3XKSA1

Infineon Technologies AG SPP02N60S5

Infineon Technologies AG SPP02N60C3HKSA1

Infineon Technologies AG SPP02N60C3

Infineon Technologies AG SPP02N60C3IN

SPP02N60 Datasheets Context Search

02n60s5

02N60C3

V6 marking code

02N60S5

02N60

Q67040-S4181

02N60C3

SPP02N60S5

02N60C3

SPB02N60S5

SPP02N60S5

SPB02N60S5

SPB02N60S5

02N60C3

SPP02N60S5

02N60C3

SPB02N60S5

SMD Diode V6 marking code

P-TO263-3-2

SPP02N60S5

MGF4919G

ZVT full bridge