02N60C Search Results

02N60C Price and Stock

Filter by Manufacturer

Infineon Technologies AG


Infineon Technologies AG SPU02N60C3BKMA1 - Rail/Tube (Alt: SPU02N60C3BKMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPU02N60C3BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	SPU02N60C3BKMA1	Bulk			1	1 $1.43 10 $1.25 100 $1.00 1000 $0.82 10000 $0.68	Buy Now
EBV Elektronik	SPU02N60C3BKMA1			40 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPU02N60C3BKMA1		6,263			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPU02N60C3BKMA1		8,740			1 - 10 - 100 $0.81 1000 $0.54 10000 $0.54	Buy Now
Infineon Technologies AG SPP02N60C3HKSA1 Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP02N60C3HKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP02N60C3HKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP02N60C3HKSA1		4,880			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIPC02N60C3X1SA1 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC02N60C3X1SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIPC02N60C3X1SA1	Waffle Pack			2,335	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD02N60C3 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPD02N60C3		1,253			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	SPD02N60C3		445			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD02N60C3		47,320			1 - 10 - 100 - 1000 $0.41 10000 $0.37	Buy Now
Infineon Technologies AG SPP02N60C3 Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-220C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPP02N60C3		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 02N60C price and stock on Findchips.com

02N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 gpt09051 02n6	PDF
02N60C3 Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +7q67040-s4392 q67040-s4393 02n60c3 smd diode marking 20 smd transistor marking 03 02n60 250td	PDF
V6 marking code Abstract: diode marking v6 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +4q67040-s4392 q67040-s4393 v6 marking code diode marking v6	PDF
02N60 Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode Contextual Info: 02N60C3 02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +5q67040-s4392 02n60c3 02n60 sp*02n60 marking code v6 diode	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	od-80 ot-223 ot-89 stk and str integrated circuits +9transistor smd zg 1e str-z4579 turuta 6 pin transistor smd code pa transistor 5d smd elm85361a stk and str integrated circuits, 2011 edition 5g smd transistor 15d diode smd code	PDF
02N60C3 Abstract: SPP02N60C3 SPB02N60C3 02n60c Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 02n60c3 02n60c	PDF
DD35 Abstract: 02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 dd35	PDF
02N60C3 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 q67040-s4393 02n60c3	PDF
02N60 Abstract: g25 SMD Transistor SMD Transistor g25 02N60C3 SMD MARKING CODE g25 A70 SMD 02n60c smd transistor ds SOT 23 SP*02N60 SPN02N60C3 Contextual Info: 02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type	Original	spn02n60c3 ot223 q67040-s4553 02n60c3 +802n60 g25 smd transistor smd transistor g25 smd marking code g25 a70 smd 02n60c smd transistor ds sot 23 sp*02n60	PDF
SMD Transistor g25 Abstract: g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60 Contextual Info: 02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type	Original	spn02n60c3 ot223 q67040-s4553 02n60c3 +5smd transistor g25 g25 smd transistor sp*02n60 df marking code smd transistor 02n60	PDF
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 eas50 diode marking code 623	PDF
02N60C3 Abstract: SPD02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
02N60 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF

02N60C3 Abstract: marking code V6 DIODE 02N60 DSA003761 DIN 6784 SPN02N60C3 VPS05163 Contextual Info: 02N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 0.4 A • New revolutionary high voltage technology • Ultra low gate charge SOT223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type 02N60C3	Original	spn02n60c3 ot223 q67040-s4553 vps05163 +502n60c3 marking code v6 diode 02n60 dsa003761 din 6784	PDF
02N60C3 Abstract: SPB02N60C3 SPP02N60C3 02N60 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 02n60c3 02n60	PDF
SMD Diode V6 marking code Abstract: SPP02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 q67040-s4393 smd diode v6 marking code	PDF
02N60C3 Abstract: SPN02N60C3 VPS05163 SMD TRANSISTOR MARKING 2c Contextual Info: 02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 0.4 A • New revolutionary high voltage technology • Ultra low gate charge SOT223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type Package	Original	spn02n60c3 ot223 q67040-s4553 vps05163 +202n60c3 smd transistor marking 2c	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 marking code v6 73 diode	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
TDA 16822 Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as	Original	b152-h8202-x-x-7600 tda 16822 04n60c3 equivalent ice1qs01 equivalent +7tda 3050 tda 1040 tda 16846 tda 16888 1qs01 07n60c3 mosfet transistor 04n60c3	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
Contextual Info: 02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type	Original	spn02n60c3 ot223 q67040-s4553 02n60c3	PDF
02N60C3 Abstract: 02n60 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF

02N60C Search Results

02N60C Price and Stock

Infineon Technologies AG SPU02N60C3BKMA1

Infineon Technologies AG SPP02N60C3HKSA1

Infineon Technologies AG SIPC02N60C3X1SA1

Infineon Technologies AG SPD02N60C3

Infineon Technologies AG SPP02N60C3

02N60C Datasheets Context Search

02N60C3

02N60C3

V6 marking code

02N60

02N60C3

STK and STR integrated circuits

02N60C3

DD35

02N60C3

02N60

SMD Transistor g25

02N60c3

02N60C3

02N60

02N60C3

02N60C3

SMD Diode V6 marking code

02N60C3

02N60C3

PEF 24628

TDA 16822

BCM 4336

02N60C3