P-T0220-3-1
Abstract: 4274V50 TLE4274V50 P-T0252-3-1
Contextual Info: S IE M E N S Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Type Ordering Code
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q67000-a9258q67000-a9257q67000-a9256p-t0220-3-1+5t0220gpt090514274v50tle4274v50p-t0252-3-1
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Q67060-S6505-A3
Abstract: GPT09050 GPT09051 P-TO251-3-1
Contextual Info: HITFET=II.Generation BTS 118 D Smart Lowside Power Switch Features Product Summary Logic Level Input Input Protection ESD Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation
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AN 7274
Abstract: Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11
Contextual Info: 5-V Low Drop Voltage Regulator TLE 7274 Features • • • • • • Output voltage 5 V ±2% Ultra low current consumption: typ. 20µA 300 mA current capability Very low-drop voltage Short-circuit-proof Suitable for use in automotive electronics P-TO252-3-1
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p-to252-3-1p-to263-3-1an 7274q67006-a9728+4aeb03613aep02281aep02512p-to252-3-11
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04N60C3
Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
Contextual Info: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability
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spd04n60c3spu04n60c3p-to251p-to252+5q67040-s441204n60c304n60c04n60sdp06s60
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02N60C3
Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances
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spd02n60c3spu02n60c3p-to251p-to252+5q67040-s442002n60c302n60gpt0905102n6
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PG-TO252-3-11
Abstract: TLE 4276 D-PAK AEB02283 AEP02282 AEP02561 AES02284
Contextual Info: Voltage Regulator TLE 4274 / 3.3V;2.5V Features • • • • • • • • Output voltage: 3.3 V/2.5 V ± 4% Current capability 400 mA Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Green Product RoHS compliant
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p-sot223-4ot223pg-to252-3-11tle 4276 d-pak+4aeb02283aep02282aep02561aes02284
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SPD01N60S5
Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
Contextual Info: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spu01n60s5spd01n60s5p-to252p-to251-3-1+4q67040-s419301n60s501n60q67040-s4188
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smd transistor code 622
Abstract: cq 622 4274 V33 P-SOT-223-4-1 TO252 rthjc P-SOT223-4-1 AES02285 P-TO252-3-1 A928 AEB02283
Contextual Info: Voltage Regulator TLE 4274 Preliminary Data Features • • • • • Output voltage: 3.3 V/2.5 V ± 4 % Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Type Ordering Code Package P-SOT223-4-1
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p-sot223-4-1q67006-a9289q67006-a9348p-to252-3-1+10q67006-a9359ot223smd transistor code 622cq 6224274 v33p-sot-223-4-1to252 rthjcaes02285a928aeb02283
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04n60c2
Abstract: 04N60C SPU04N60C2 Q67040-S4307 SPD04N60C2
Contextual Info: SPD04N60C2 SPU04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • Ultra low effective capacitances
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spd04n60c2spu04n60c2p-to251p-to252+4q67040-s4307q67040-s430604n60c204n60c
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Contextual Info: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spu04n60s5spd04n60s5p-to252p-to251-3-1+2q67040-s4228q67040-s4202
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04n60s5
Contextual Info: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances
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spu04n60s5spd04n60s5p-to252p-to251-3-1+3q67040-s4228q67040-s420204n60s5
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TLE4274V50
Abstract: AEP02512 Q67000-A9256 Q67000-A9257 Q67000-A9258 Q67006-A9259 Q67006-A9260 Q67006-A9261 Q67006-A9331 4274GV50
Contextual Info: Low-Drop Voltage Regulator TLE 4274 Features • • • • • • • • Output voltage 5 V, 8.5 V or 10 V Output voltage tolerance ≤ ± 4% Current capability 400 mA Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof
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q67000-a9258p-to220-3-1q67000-a9257q67000-a9256+9q67006-a9331p-to252-3-1q67006-a9261p-to263-3-1tle4274v50aep02512q67006-a9259q67006-a92604274gv50
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02N60S5
Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252
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spu02n60s5spd02n60s5p-to251-3-1q67040-s4226+5p-to252q67040-s421302n60s5gpt09051transistor 02n60s5
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P-TO252-3-1
Contextual Info: Voltage Regulator TLE 4274 Preliminary Data Features • • • • • Output voltage: 3.3 V/2.5 V ± 4 % Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Type Ordering Code Package P-SOT223-4-1
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p-sot223-4-1q67006-a9289q67006-a9348p-to252-3-1+2q67006-a9359ot223
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AR4100
Abstract: Q67040-S4423
Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated
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spd07n60c3spu07n60c3o-251o-252+4p-to251-3-1p-to252-3-1ar4100q67040-s4423
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Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated
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spd07n60c3spu07n60c3o-251o-252+2p-to251-3-1p-to252-3-1
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TLE4284DV
Abstract: TLE4284DV50
Contextual Info: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V
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p-to252-3-1p-to2523-11tle4284dvtle4284dv50 |
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AES02285
Abstract: AEB02283 AEP02282 AEP02561 AES02284 Q67006-A9348 Q67006-A9289 infineon 4274 smd transistor code 622 TLE 4274
Contextual Info: Voltage Regulator TLE 4274 Features • • • • • • Output voltage: 3.3 V/2.5 V ± 4 % Current capability 400 mA Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Type SOT-223 Ordering Code Package
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ot-223q67006-a9289p-sot223-4-1q67006-a9348+11p-to252-3-1q67006-a9359ot223aes02285aeb02283aep02282aep02561aes02284infineon 4274smd transistor code 622tle 4274
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AEP02817
Abstract: TLE4284DV50 TLE4284DV P-TO252 TLE 4284 DV AEB02813 AEB02814 AEP02821 P-TO252-3-1 Q67000-A9480
Contextual Info: Voltage Regulator TLE 4284 Target Data Sheet Features • • • • • • • • Fixed output voltage regulator 2.5 V, 3.3 V or 5 V Adjustable output down to 1.25 V 800 mA output current 80 dB ripple rejection No output capacitor necessary Suitable for automotive application
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p-to252-3-1q67000-a9480q67000-a9482q67000-a9481+8aep02817tle4284dv50tle4284dvp-to252tle 4284 dvaeb02813aeb02814aep02821
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Contextual Info: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V
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p-to252-3-1p-to2523-11 |
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02n60
Abstract: SPD02N60S5 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spu02n60s5spd02n60s5p-to252p-to251-3-1+3q67040-s4226q67040-s421302n60
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01N60S5
Abstract: 01n60 SPD01N60S5 SPU01N60S5
Contextual Info: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252
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spu01n60s5spd01n60s5spux7n60s5/spdx7n60s5p-to252+4p-to251-3-1q67040-s419301n60s501n60
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04N60C
Contextual Info: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • High peak current capability
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spd04n60c3spu04n60c3p-to251p-to252+3q67040-s441204n60c304n60c
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03n60s5
Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spu03n60s5spd03n60s5p-to252p-to251-3-1+3q67040-s4227q67040-s418703n60s5
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