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    02N6 Search Results

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    Walsin Technology Corporation 0402N6R8D500CT

    Capacitor: ceramic; MLCC; 6.8pF; 50V; C0G (NP0); ±0.5pF; SMD; 0402
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    TME 0402N6R8D500CT 5,400 100
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    Walsin Technology Corporation 0402N680J500CT

    Capacitor: ceramic; MLCC; 68pF; 50V; C0G (NP0); ±5%; SMD; 0402
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    TME 0402N680J500CT 3,100 100
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    ComSIT USA 0402N680J500CT 70,000
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    IXYS Corporation IXTN102N65X2

    Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTN102N65X2 300
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    Walsin Technology Corporation 0402N680F500CT

    Capacitor: ceramic; MLCC; 68pF; 50V; C0G (NP0); ±1%; SMD; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 0402N680F500CT 10,000
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    Walsin Technology Corporation 0402N681J500CG

    Capacitor: ceramic; MLCC; 680pF; 50V; C0G (NP0); ±5%; SMD; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 0402N681J500CG 50,000
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    02N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    02N60

    Abstract: 02N60J 02N60h 2529V
    Contextual Info: 02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S


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    ap02n60h/j-ho-252ap02n60j-ho-251+402n60j02n6002n60h2529v PDF

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


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    spp02n60s5spb02n60s5p-to263-3-2p-to220-3-1+5q67040-s418102n60s5transistor 02n60s502n60q67040-s4212 PDF

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


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    spd02n60c3spu02n60c3p-to251p-to252+5q67040-s442002n60c302n60gpt0905102n6 PDF

    iw3610

    Contextual Info: iW3610 AC/DC Digital Power Controller for Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 Vac / 230 Vac ●● Line frequency ranges from 47 Hz to 64 Hz ●● Intelligent wall dimmer detection xx Leading-edge xx Trailing-edge xx No-dimmer detected


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    iw3610 PDF

    Contextual Info: iW3614 AC/DC Digital Power Controller for High Power Factor Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 VAC / 230 VAC LED driver ●● Meets harmonic requirements, high power factor power factor > 0.9 without dimmer ●● Line frequency ranges from 45Hz to 66Hz


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    iw3614 PDF

    02n60i

    Contextual Info: 02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power


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    ap02n60i-ao-220cfm02n60i PDF

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


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    spu02n60s5spd02n60s5p-to252p-to251-3-1+3q67040-s422602n60s502n60 PDF

    SPB02N60S5

    Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    spb02n60s5p-to263-3-2q67040-s421202n60s5 PDF

    02N60C3

    Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD
    Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


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    spp02n60c3spb02n60c3p-to263-3-2p-to220-3-1+7q67040-s4392q67040-s439302n60c3smd diode marking 20smd transistor marking 0302n60250td PDF

    02N60

    Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163
    Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


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    spn02n60s5vps05163ot-22302n60s5+3q67040-s420702n60gps05560 PDF

    Contextual Info: Advanced Power Electronics Corp. 02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best


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    ap02n60h/j-h-hf-3ap02n60h-h-hf-3o-252o-251+3ap02n60j-h-hf-3ap02n6002n60j PDF

    V6 marking code

    Abstract: diode marking v6
    Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


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    spp02n60c3spb02n60c3p-to263-3-2p-to220-3-1+4q67040-s4392q67040-s4393v6 marking codediode marking v6 PDF

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


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    spu02n60s5spd02n60s5p-to252p-to251+2q67040-s422602n60s5 PDF

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Contextual Info: 02N60S5 02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


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    spp02n60s5spb02n60s5sppx5n60s5/spbx5n60s5p-to220-3-1+302n60s5q67040-s4181p-to263-3-2 PDF

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


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    spn02n60s5ot-223q67040-s4207vps05163+102n60s5 PDF

    02N60

    Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode
    Contextual Info: 02N60C3 02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


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    spp02n60c3spb02n60c3p-to263-3-2p-to220-3-1+5q67040-s439202n60c302n60sp*02n60marking code v6 diode PDF

    02N60C3

    Abstract: P-TO252 SPD02N60C3 SPU02N60C3
    Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


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    spd02n60c3spu02n60c3p-to251p-to252+2q67040-s442002n60c3 PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    od-80ot-223ot-89stk and str integrated circuits+9transistor smd zg 1estr-z4579turuta6 pin transistor smd code patransistor 5d smdelm85361astk and str integrated circuits, 2011 edition5g smd transistor15d diode smd code PDF

    Q67040-S4181

    Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
    Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


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    spp02n60s5spb02n60s5p-to263-3-2p-to220-3-1+7q67040-s418102n60s502n60q67040s4181q67040-s4212transistor 02n60s5p-to-263-3-2 PDF

    02N60C3

    Abstract: SPP02N60C3 SPB02N60C3 02n60c
    Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated


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    spp02n60c3spb02n60c3p-to263-3-2p-to220-3-1+3q67040-s439202n60c302n60c PDF

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


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    spp02n60s5spb02n60s5p-to263-3-2p-to220-3-1+8sppx5n60s5/spbx5n60s5q67040-s418102n60s5k 117smd diode 44aspbx5n60s502n60transistor 02n60s5 PDF

    Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


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    spn02n60s5vps05163ot-22302n60s5+1q67040-s4207 PDF

    trailing SCHEMATIC dimmer

    Abstract: SCHEMATIC leading edge dimmer trailing edge dimmer SCHEMATIC trailing edge dimmer 220 pwm dimmer 12.0 kw dimmer module Triac 3 kw dimmer schematic diagram IW3614 SCHEMATIC dimmer control dimmer controller ic
    Contextual Info: iW3614 AC/DC Digital Power Controller for High Power Factor Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 VAC / 230 VAC LED driver ●● Meets harmonic requirements, high power factor power factor > 0.9 without dimmer ●● Line frequency ranges from 45 Hz to 66 Hz


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    iw3614trailing schematic dimmerschematic leading edge dimmertrailing edge dimmer+6schematic trailing edge dimmer220 pwm dimmer12.0 kw dimmer moduletriac 3 kw dimmer schematic diagramschematic dimmer controldimmer controller ic PDF

    DD35

    Abstract: 02N60C3
    Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


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    spd02n60c3spu02n60c3p-to251p-to252+3q67040-s442002n60c3dd35 PDF