02N60 Search Results

02N60 Price and Stock

Filter by Manufacturer

Select Manufacturer


Torex Semiconductor LTD XC6902N601MR-G IC: voltage regulator; linear,fixed; -6V; 200mA; SOT23-3; SMD; Ch: 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	XC6902N601MR-G				1	1 $0.81 10 $0.81 100 $0.53 1000 $0.48 10000 $0.45	Get Quote
Avnet Americas	XC6902N601MR-G	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Avnet Silica	XC6902N601MR-G			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NDD02N60Z-1G - Rail/Tube (Alt: NDD02N60Z-1G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NDD02N60Z-1G	Tube			3,375	1 - 10 - 100 - 1000 - 10000 $0.15	Get Quote
RS	NDD02N60Z-1G	Bulk			5	1 - 10 $0.56 100 $0.49 1000 $0.49 10000 $0.49	Get Quote
Rochester Electronics	NDD02N60Z-1G		369,185		1	1 - 10 - 100 $0.34 1000 $0.28 10000 $0.25	Buy Now
Flip Electronics	NDD02N60Z-1G		1,050			1 $0.15 10 $0.15 100 $0.15 1000 $0.15 10000 $0.15	Get Quote
Torex Semiconductor LTD XC6902N601ER-G Linear Voltage Regulator, Fixed, 1 Output, -6V, -16 V to -2.4 V, 200mA, USP-6C, 6 Pins - Tape and Reel (Alt: XC6902N601ER-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XC6902N601ER-G	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Infineon Technologies AG SPP02N60C3HKSA1 Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP02N60C3HKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP02N60C3HKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIPC02N60C3X1SA1 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC02N60C3X1SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIPC02N60C3X1SA1	Waffle Pack			2,335	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 02N60 price and stock on Findchips.com

02N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
02N60 Abstract: 02N60J 02N60h 2529V Contextual Info: 02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S	Original	ap02n60h/j-h o-252 ap02n60j-h o-251 +402n60j 02n60 02n60h 2529v	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +5q67040-s4181 02n60s5 transistor 02n60s5 02n60 q67040-s4212	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 gpt09051 02n6	PDF
02n60i Contextual Info: 02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power	Original	ap02n60i-a o-220cfm 02n60i	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 02n60s5 02n60	PDF
SPB02N60S5 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	spb02n60s5 p-to263-3-2 q67040-s4212 02n60s5	PDF
02N60C3 Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +7q67040-s4392 q67040-s4393 02n60c3 smd diode marking 20 smd transistor marking 03 02n60 250td	PDF
02N60 Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163 Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors	Original	spn02n60s5 vps05163 ot-223 02n60s5 +3q67040-s4207 02n60 gps05560	PDF
Contextual Info: Advanced Power Electronics Corp. 02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best	Original	ap02n60h/j-h-hf-3 ap02n60h-h-hf-3 o-252 o-251 +3ap02n60j-h-hf-3 ap02n60 02n60j	PDF
V6 marking code Abstract: diode marking v6 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +4q67040-s4392 q67040-s4393 v6 marking code diode marking v6	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251 +2q67040-s4226 02n60s5	PDF
02N60S5 Abstract: SPB02N60S5 SPP02N60S5 Contextual Info: 02N60S5 02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +302n60s5 q67040-s4181 p-to263-3-2	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu02n60s5 spd02n60s5 p-to251-3-1 q67040-s4226 +5p-to252 q67040-s4213 02n60s5 gpt09051 transistor 02n60s5	PDF
02N60S5 Abstract: SPN02N60S5 VPS05163 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3	Original	spn02n60s5 ot-223 q67040-s4207 vps05163 +102n60s5	PDF

02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	od-80 ot-223 ot-89 stk and str integrated circuits +9transistor smd zg 1e str-z4579 turuta 6 pin transistor smd code pa transistor 5d smd elm85361a stk and str integrated circuits, 2011 edition 5g smd transistor 15d diode smd code	PDF
Q67040-S4181 Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +7q67040-s4181 02n60s5 02n60 q67040s4181 q67040-s4212 transistor 02n60s5 p-to-263-3-2	PDF
02N60C3 Abstract: SPP02N60C3 SPB02N60C3 02n60c Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 02n60c3 02n60c	PDF
SPP02N60S5 Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +8sppx5n60s5/spbx5n60s5 q67040-s4181 02n60s5 k 117 smd diode 44a spbx5n60s5 02n60 transistor 02n60s5	PDF
Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors	Original	spn02n60s5 vps05163 ot-223 02n60s5 +1q67040-s4207	PDF
DD35 Abstract: 02N60C3 Contextual Info: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 dd35	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +5p-to252 02n60s5 q67040-s4226 q67040-s4213 02n60	PDF
02N60C3 Contextual Info: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	spp02n60c3 spb02n60c3 p-to263-3-2 p-to220-3-1 +3q67040-s4392 q67040-s4393 02n60c3	PDF

02N60 Search Results

02N60 Price and Stock

Torex Semiconductor LTD XC6902N601MR-G

onsemi NDD02N60Z-1G

Torex Semiconductor LTD XC6902N601ER-G

Infineon Technologies AG SPP02N60C3HKSA1

Infineon Technologies AG SIPC02N60C3X1SA1

02N60 Datasheets Context Search

02N60

02n60s5

02N60C3

02n60i

02N60S5

SPB02N60S5

02N60C3

02N60

V6 marking code

SPD02N60S5

02N60S5

02N60S5

02N60S5

02N60C3

STK and STR integrated circuits

Q67040-S4181

02N60C3

SPP02N60S5

DD35

02N60

02N60S5

02N60C3