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Infineon Technologies AG


Infineon Technologies AG SPU01N60S5 COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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01N60S5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
01N60S5 Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Contextual Info: 01N60S5 01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spu01n60s5 spd01n60s5 p-to252 p-to251-3-1 +5spux7n60s5/spdx7n60s5 q67040-s4193 01n60s5 01n60 q67040-s4188	PDF
SPD01N60S5 Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Contextual Info: 01N60S5 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60s5 spd01n60s5 p-to252 p-to251-3-1 +4q67040-s4193 01n60s5 01n60 q67040-s4188	PDF
01N60S5 Abstract: SPD01N60S5 SPU01N60S5 Contextual Info: 01N60S5 01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu01n60s5 spd01n60s5 spux7n60s5/spdx7n60s5 p-to251-3-1 +3p-to252 01n60s5 q67040-s4193	PDF
Contextual Info: 01N60S5 Preliminary data Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology D,2/4 • Ultra low gate charge 4 • Extreme dv/dt rated 3 •=Optimized capacitances G,1 2 S,3 •=Improved noise immunity	Original	spn01n60s5 ot-223 01n60s5 vps05163 +1q67040-s4208	PDF
SPN01N60S5 Abstract: 01n60 01N60S5 GPS05560 VPS05163 Contextual Info: 01N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors	Original	spn01n60s5 vps05163 ot-223 01n60s5 +3q67040-s4208 01n60 gps05560	PDF
01N60S5 Abstract: 01n60 SPD01N60S5 SPU01N60S5 Contextual Info: 01N60S5 01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu01n60s5 spd01n60s5 spux7n60s5/spdx7n60s5 p-to252 +4p-to251-3-1 q67040-s4193 01n60s5 01n60	PDF
SPN01N60S5 Contextual Info: 01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3	Original	spn01n60s5 ot-223 vps05163 q67040-s4208 +101n60s5	PDF
V4680 Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A Contextual Info: 01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity	Original	spn01n60s5 ot-223 q67040-s4208 vps05163 +501n60s5 v4680 smd diode code 03a gps05560 smd diode marking 03a	PDF
SPD01N60S5 Abstract: SPU01N60S5 01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Contextual Info: 01N60S5 01N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity	Original	spu01n60s5 spd01n60s5 spux7n60s5/spdx7n60s5 p-to251-3-1 +4p-to252 01n60s5 q67040-s4193 q67040-s4188	PDF
SPN01N60S5 Abstract: 01N60S5 VPS05163 smd diode MARKING 03A Contextual Info: 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity	Original	spn01n60s5 ot-223 q67040-s4208 vps05163 +201n60s5 smd diode marking 03a	PDF