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    4310E Search Results

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    4310E Price and Stock

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    Flex Ltd PKU4310EPI

    - Trays (Alt: PKU4310EPI)
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    Avnet Americas PKU4310EPI Tray 150
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    TE Connectivity 254310-E

    Conn Circular Insert M12 SKT 8 POS Solder Bulk - Bag (Alt: 254310-E)
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    Avnet Americas 254310-E Bag 25 Weeks, 1 Days 100
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    Mouser Electronics 254310-E
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    Interstate Connecting Components 254310-E
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    Master Electronics 254310-E
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    Microchip Technology Inc MAX24310EXG2

    PLL Clock Synthesizer, 1 Hz to 750 MHz, 10 Outputs, 3.135 V to 3.465 V, 81 Pins, CSBGA - Trays (Alt: MAX24310EXG2)
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    Microchip Technology Inc MAX24310EXG2 Tray 16 Weeks
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    Avnet Silica MAX24310EXG2 7 Weeks 240
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    Master Electronics MAX24310EXG2
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    Vyrian MAX24310EXG2 4,917
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    LEDIL CA14310_EVA-WW

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    Avnet Americas CA14310_EVA-WW Tray 10 Weeks 90
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    Avnet Silica CA14310_EVA-WW 7 Weeks 90
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    EBV Elektronik CA14310_EVA-WW 7 Weeks 90
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    TE Connectivity 354310-E

    Conn Adapter 50 Position Board to Board to 50 Position Board to Board Plug to Plug Straight Tray - Bulk (Alt: 354310-E)
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    Avnet Americas 354310-E Bulk 35 Weeks, 1 Days 26
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    Mouser Electronics 354310-E 35
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    Newark 354310-E Bulk 1
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    Avnet Abacus 354310-E 32 Weeks 26
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    Avnet Asia 354310-E 70 34 Weeks, 3 Days 26
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    Master Electronics 354310-E
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    4310E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGF4310

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .


    OCR Scan
    4310ef4319emgf4310emgf4314e+3mgf4318egf4319emgf4310 PDF

    Contextual Info: PRODUCT DATASHEET 1-800-383-7323 / USA USA/CAN 1-800-383-7323 1-800-383-7323 / CANADA www.energizer.com ENERGIZER 329 SILVER OXIDE Specifications Industry Standard Dimensions mm inches Chemical System: Silver Oxide (Zn/Ag2O) Nominal Voltage: Typical Capacity:


    Original
    4310e PDF

    4310E

    Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S Alex ESLUOAN Luo Approved 1 (1) (4) No. Checked PKU 4000E seriesEriksson] Direct Converters EAB/FAC/P SEC/S ESLUOAN [Susanne Input 36-72 V, Output up to 10 A / 33 W


    Original
    1/1301-bmr6601100152-bmr66011uen4310e PDF

    F4310E

    Abstract: F4314E mitsubishi application mg series gaas
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G 4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan
    f4310e4310ef4314emgf4318e+1mitsubishi application mg series gaas PDF

    9834E

    Abstract: 863A1 4a14c 3AA1 431A1
    Contextual Info: 1 Datasheet CCCC9CF !C "#$C%EFC&'!CC 9C"'FC  A *8C 1 1 ●&'FC%!'C ●8!EC • ;B67!19CED1C914686818412. B1 ■A1 2. 1 6D9A1 C91 AEA38A51 'C81 8A1 )!1 9CED1 4/1 1


    Original
    -1c912/43f1a18a3e6d9a1c91+9c5a5184174e834d91/3a36ae734ec5a519834e863a14a14c3aa1431a1 PDF

    MGF4314E

    Abstract: MGF4319E MGF4318E low noise x band hemt transistor MGF4310E gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd
    Contextual Info: bSLHaaT O G l T f l ? 1} S O I • MITSUBISHI SEMICONDUCTOR <GaAs FET> M 4310E Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 3 1 0E OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan
    mgf4310e12ghzmgf4314emgf4318e+8mgf4319eunit132dd17flflslow noise x band hemt transistorgd 361 transistorgs 431 transistormgf431transistor 132-gd PDF