MGF0921A Search Results

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

SMD GP 113

Abstract: MGF0921A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF0921A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

MGF0921A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

idq04

Abstract: 60Ghz MGF0921A
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 24 th Mar. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm

MGF0921A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0921A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=33dBm TYP. @ f=1,9GHz,Pin=17dBm

diode gp 429

Abstract: MGF0921A 9014 SMD gp 429 pin smd diode ID 80 C 1541
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF0921A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

9014 SMD

Abstract: diode gp 429 gp 429 pin smd diode MGF0921A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety