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    X-BAND POWER TRANSISTOR 50W Search Results

    X-BAND POWER TRANSISTOR 50W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    X-BAND POWER TRANSISTOR 50W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pHEMT transistor 360

    Abstract: "RF Power Transistor" T1P3005028-SP
    Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across


    Original     		PDF T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"

    80w audio amplifier circuit diagram

    Abstract: NTE7103 50W TRANSISTOR AUDIO AMPLIFIER
    Text: NTE7103 Integrated Circuit 50W to 80W Power Amplifier, Driver Description: The NTE7103 is an integrated monolithic circuit in a 14−Lead SIP type package designed for use in 50W to 80W class HiFi audio power amplifier applications. This device consists of an input differential


    Original     		PDF NTE7103 NTE7103 14-Lead 20kHz, 100Hz, 80w audio amplifier circuit diagram 50W TRANSISTOR AUDIO AMPLIFIER

    NTE7103

    Abstract: 80w audio amplifier circuit diagram 50w audio amplifier circuit diagram 50W TRANSISTOR AUDIO AMPLIFIER 80W AUDIO AMPLIFIER DIAGRAM
    Text: NTE7103 Integrated Circuit 50W to 80W Power Amplifier, Driver Description: The NTE7103 is an integrated monolithic circuit in a 14–Lead SIP type package designed for use in 50W to 80W class HiFi audio power amplifier applications. This device consists of an input differential


    Original     		PDF NTE7103 NTE7103 20kHz, 100Hz, 80w audio amplifier circuit diagram 50w audio amplifier circuit diagram 50W TRANSISTOR AUDIO AMPLIFIER 80W AUDIO AMPLIFIER DIAGRAM

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    TMPA8891

    Abstract: TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879
    Text: ASSPs Audio & Video Equipment ICs z 66 Communications Equipment ICs z 78 Radio-Frequency Power Amp ICs z 81 Automotive ICs z 82 Display Driver ICs z 83 Network & Interface ICs z 86 Peripheral Equipment LSIs z 87 Other Consumer Product ICs z 88 65 Audio & Video Equipment ICs


    Original     		PDF TMPA8873CxCNG TMPA8879CxCNG TMPA8891CxCNG TMPA8893CxCNG TMPA8897CxCNG TMPA8899CxCNG TMPA8863CxNG TMPA8869CxNG TMPA8873PSCNG TMPA8879PSCNG TMPA8891 TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    TB1238AN

    Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
    Text: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98


    Original     		PDF TMPA8812CxDNG TMPA8821CxNG TMPA8823CxNG TMPA8827CxNG TMPA8829CxNG TMPA8857CxNG TMPA8859CxNG TMPA8812PSNG P-SDIP56-600-1 TMPA8821PSNG TB1238AN IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF

    STK401-140

    Abstract: STK401-000
    Text: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same


    Original     		PDF ENN4898 STK401-140 STK401-140 STK401-000

    stk401-140

    Abstract: No abstract text available
    Text: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same


    Original     		PDF ENN4898 STK401-140 stk401-140

    D2694

    Abstract: STK401-130
    Text: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same


    Original     		PDF ENN4897 STK401-130 D2694 STK401-130

    STK401-130

    Abstract: power amplifier 100w diagram sanyo electrolytic capacitors
    Text: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same


    Original     		PDF ENN4897 STK401-130 STK401-130 power amplifier 100w diagram sanyo electrolytic capacitors

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    TB1334FG

    Abstract: TC90517FG TB1334 TB2926 tc94a92fg TC90517 tc90517fg toshiba tb31224cf tc94a34fg TB31371
    Text: SEMICONDUCTOR GENERAL CATALOG ASSPs Audio & Video Equipment ICs Communications Equipment ICs Radio-Frequency Power Amp ICs Automotive ICs Display Driver ICs Peripheral Equipment LSIs Other Consumer Product ICs 1 2009-8 SCE0004I Audio & Video Equipment ICs


    Original     		PDF SCE0004I TB1334FG HQFP64-P-1010-0 TC90196AFG LQFP208-P-2828-0 TC90192FG TC90192XBG P-FBGA265-1515-0 TB1334FG TC90517FG TB1334 TB2926 tc94a92fg TC90517 tc90517fg toshiba tb31224cf tc94a34fg TB31371

    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


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    TRANSISTOR Z4

    Abstract: Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces
    Text: 0912-45 45 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-45 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes


    Original     		PDF 25oC2 100mil) 68mfd, TRANSISTOR Z4 Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    transistor z5

    Abstract: 027w TRANSISTOR Z4 Transistor z1 10KW
    Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance


    Original     		PDF 25oC2 12mfd, transistor z5 027w TRANSISTOR Z4 Transistor z1 10KW

    CHIP SM 4108

    Abstract: PCB 3d SURROUND sound system circuit Sanyo STK4144 surround amplifier stk4144 STK4205 STK4159 STK4209 MG-200 STK4199MK2
    Text: SA NY O S E M I C O N D U C T O R CORP b3E D • T T T T D V b D 0 1 2 7 2 7 252 ■ TSA J Ordering num ber: EN4218I Thick-film Hybrid Integrated Circuit H IC STK4199MK2 No. 4218 SA\YO i 3-channel AF Power Amplifier (± Dual Power Supply) 25W + 50W + 25W


    OCR Scan     		PDF D01E727 EN4218I STK4199MK2 STK4199MK2 CHIP SM 4108 PCB 3d SURROUND sound system circuit Sanyo STK4144 surround amplifier stk4144 STK4205 STK4159 STK4209 MG-200

    TRANSISTOR 1P

    Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, T-40E Tc-25^ 520MHz TRANSISTOR 1P 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 1P RF uhf power transistor 50W

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)


    OCR Scan     		PDF 2SC3147 175MHz, 156pF 39pFX 132pF 33pFX