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    X-BAND MMIC LNA Search Results

    X-BAND MMIC LNA Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    X-BAND MMIC LNA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


    Original     		PDF FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509

    Untitled

    Abstract: No abstract text available
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


    Original     		PDF FMA219 FMA219 14dBm FMA219-000 FMA219-000SQ FMA219-000S3 DS121119

    X-band Gan Hemt

    Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


    Original     		PDF FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509 X-band Gan Hemt x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER

    GAAS FET AMPLIFIER x-band 10w

    Abstract: x-band mmic lna radar block diagram MMIC X-band amplifier diagram radar circuit x-band limiter LNA x-band Three MMIC Solution for an X-band RF Front End radar system with circuit diagram x-band mmic
    Text: May 2006 A Three MMIC Solution for an X-band RF Front End by M/A-COM Introduction /A-COM has developed new MMICs for X-band radar applications that condense the RF front end into a set of only 3 MMICs. An equivalent set of single function MMICs might require 9 to 11 MMICs. Reducing


    Original     		PDF 10W0079-DIE GAAS FET AMPLIFIER x-band 10w x-band mmic lna radar block diagram MMIC X-band amplifier diagram radar circuit x-band limiter LNA x-band Three MMIC Solution for an X-band RF Front End radar system with circuit diagram x-band mmic

    Untitled

    Abstract: No abstract text available
    Text: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for


    Original     		PDF NJG1800NB2 NJG1800NB2 10-pin EPCSP10-B2

    Untitled

    Abstract: No abstract text available
    Text: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for


    Original     		PDF NJG1800NB2 NJG1800NB2 10-pin EPCSP10-B2

    x-band mmic core chip

    Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
    Text: Product Feature T/R Module Solution for X-band Phasedarray Radar U nited Monolithic Semiconductors UMS has a considerable heritage in the design and production of MMIC solutions for space and defense programs. This extensive experience has been used to design


    Original     		PDF com/28495-74 x-band mmic core chip CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy

    UM 9515

    Abstract: x-band mmic lna FMA219 LNA 9GHz Z 8607
    Text: FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:


    Original     		PDF FMA219 FMA219 35-38g. UM 9515 x-band mmic lna LNA 9GHz Z 8607

    UM 9515

    Abstract: Filtronic
    Text: FMA219 Datasheet v2.3 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:


    Original     		PDF FMA219 FMA219 MIL-STD-1686 MIL-HDBK-263. UM 9515 Filtronic

    x-band mmic lna

    Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
    Text: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC


    Original     		PDF FMA219 FMA219 x-band mmic lna x-band mmic LNA x-band FMA219BF MIL-HDBK-263 bc 408 equivalent LNA 9GHz

    X-band lna

    Abstract: x-band mmic lna FMA219 LNA 9GHz
    Text: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC


    Original     		PDF FMA219 FMA219 11GHz X-band lna x-band mmic lna LNA 9GHz

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8

    Infineon CMH192 GaAs

    Abstract: CMH192 mmic MIXER 210
    Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm


    Original     		PDF CMH192 VQFN-20 CMH192 Infineon CMH192 GaAs mmic MIXER 210

    PG311

    Abstract: No abstract text available
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH192 Q62705-K608 VQFN-20 PG311

    MAALGM0002-DIE

    Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
    Text: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V


    Original     		PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic

    x-band limiter

    Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
    Text: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3003 MA01503D MA01503D x-band limiter x-band mmic LNA x-band MMIC limiter band Limiter

    x-band limiter

    Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
    Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w

    x-band limiter

    Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
    Text: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND

    RO-P-DS-3061

    Abstract: X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
    Text: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V


    Original     		PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE PAD1504I BVA80UM BVA80UM RO-P-DS-3061 X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE

    x-band limiter

    Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
    Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w

    CMH0819

    Abstract: VQFN-24
    Text: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 CMH0819 VQFN-24

    mmic c8

    Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH192 Q62705-K608 VQFN-20 10ability CMH192 mmic c8 mmic MIXER 210 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608

    Untitled

    Abstract: No abstract text available
    Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING


    OCR Scan     		PDF MGF7134P 90GHz MGF7134P 55dBc 240MHz)

    gaas fet marking D

    Abstract: No abstract text available
    Text: Infineon *ai hnciogicsä GaAs MMIC CMH 0819 Preliminary Data Sheet • High-Linearity, Dual-Band LNA/Mixer 1C for use in CDMA Mobile Phones • integrated bypass switch for LNAs • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package • • LO - Input power down to: - 7.0 dBm


    OCR Scan     		PDF P-VQFN-24-3 gaas fet marking D