MGF1403B Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed m etal-ceram ic package as­

MGF1403B

Abstract: GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

mgf1903b

Abstract: MGF1403B MGF1402
Contextual Info: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. GHe NFmin. (dB| M V 11M MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MOF1923 4 4 12 12 12 12 12 12 12 12 12 12 1.4 1.2 1.8 101*1) <*1): P i dB(dBm)

0g18

Abstract: 0G66
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli­ fiers. The hermetically sealed metal-ceram ic package as­

MGF1403B

Abstract: GSO 69 fet K 727
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E SC R IP T IO N T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku ban d a m p li­ fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ac k a g e as­

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mitsubishi mgf

Abstract: transistor mgf
Contextual Info: M itsubishi High F re q u e n c y D e v ic e s L in e-u p High frequency devices Si RF Module for Tranceportable radio equipment FM SSB A n te n n a s w itc h S w itc h in g Small-signal diode— High power transistor G aAsFET G aA s - For low-noise amplifier

MGF1403B

Abstract: ku 611
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1403B LOW NOISE GaAs FET DESCRIPTION T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku band a m p li­ fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ackage as­

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

BUZ90af

Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi