MGF1100 Search Results

Contextual Info: MGF1100 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)60m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.10m

3SK242

Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
Contextual Info: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

MGF1100

Abstract: GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET
Contextual Info: MITSUBISHI {DISCRETE SC> "TI DE IbEMTfla11! □□10007 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 2 4 98 29 MITSUBISHI DISCRETE SC 9 ID 10007 D 1-31-2S M GF1100 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TY P E DESCRIPTION The M G F 1 1 0 0 is designed fo r use in the 500 M H z to 4 G H z