MGF1412 Search Results

MGF1502

Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A

MGF1412

Abstract: MGF1412-11-09 MGFC1412 79S12
Contextual Info: ^M ITSUBISHI Die_ MGFC1412 Package MGF1412 ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC1412 and MGF1412 are low noise GaAs FETs with a N-channel Schottky gare and are designed for use in low noise amplifiers. The MGF1412 features a hermetically sealed

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

mgf1903b

Abstract: MGF1403B MGF1402
Contextual Info: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. GHe NFmin. (dB| M V 11M MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MOF1923 4 4 12 12 12 12 12 12 12 12 12 12 1.4 1.2 1.8 101*1) <*1): P i dB(dBm)

mgf*1412

Abstract: MGF1412 MGF1412B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1412B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ fiers. The hermetically sealed metal-ceramic package as­ sures minimum parasitic losses, and has a configuration

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

MGF1412

Abstract: mgf*1412 2SK275 MGF14
Contextual Info: 001DDBÖ 1 f MITSUBISHI {DISCRETE SC> MITSUBISHI SEMICONDUCTOR <GaAs FET> - •_ M G F 1 4 1 2 "«>49829 M I T S U B I S H I D I S C R E T E SC ( 2 S K 2 7 5 ) . 9 ID 10038 D f"3l"25 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE