0619
Abstract: g720
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li U n it m i l l i m e t e r s i .r ic h e s t
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mgf1423b157min12ghz10rca+20619g720
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MGF1423B
Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression
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mgf1423b13dbm157min12ghz+5fet sm 367ku 612614 104 133 21d094mgf1423
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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mgf1102mgf1302mgf1303bmgfi323+14mgf1402bmgfi412bmgf1403bmgf1423bmgfi425bmgfi902bmgf1200mgf4310mgf1100mgf1412mgf4301mgf1304mgf7003mgf4305a
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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mgf1302mgf1303bmgf1323mgf14+15mgf1412bmgf1403bmgf1423bmgf1425bmgf1902bmgf1903bmgf4919gmgf4919mgf0907b14512hmgf4316gmgfc45v2527mgf1923mgfc38v3642mgf0904a
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2sa11152sa12352sa1235a2sa1282+162sa1282a2sa12832sa12842sa12852sa1285a2sa1286m52777spm54630pm38881m2m5932057704lm38173m6sf15dxzm34236m37204m854630p
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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o-251aao-247aco-220abpowerso-20+10buz90afhv82mgf4919g-01mgf4919gmgf2407a-01buz80af16n60mgf1302-15ssp 50n062n10l
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