0619
Abstract: g720
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li U n it m i l l i m e t e r s i .r ic h e s t
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mgf1423b157min12ghz10rca+20619g720
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MGF1502
Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A
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mgf1403mgf1404mgf1405mgf1412+11mgf141312ghzmgf211735mhzmgf2124mgf1502mgf1601mgf2116mgf1802mgf1902mgf1501
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MGF1423B
Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression
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mgf1423b13dbm157min12ghz+5fet sm 367ku 612614 104 133 21d094mgf1423
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MGF1425
Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
Contextual Info: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are
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mgf1423/1425mgf1323mgf1923mgfc1423+7mgfc1425mgf1423mgf1425mgf1425-61-16mitsubishi application mg series gaasmgf-cmgf1923-01
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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mgf1102mgf1302mgf1303bmgfi323+14mgf1402bmgfi412bmgf1403bmgf1423bmgfi425bmgfi902bmgf1200mgf4310mgf1100mgf1412mgf4301mgf1304mgf7003mgf4305a
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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mgf1302mgf1303bmgf1323mgf14+15mgf1412bmgf1403bmgf1423bmgf1425bmgf1902bmgf1903bmgf4919gmgf4919mgf0907b14512hmgf4316gmgfc45v2527mgf1923mgfc38v3642mgf0904a
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2sa11152sa12352sa1235a2sa1282+162sa1282a2sa12832sa12842sa12852sa1285a2sa1286m52777spm54630pm38881m2m5932057704lm38173m6sf15dxzm34236m37204m854630p
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MGF1423
Abstract: sc 3467
Contextual Info: MITSUBISHI {DISCRETE SC> TI DE | ¿24105=1 0010055 1 1~D T.3,.a5 MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 1 4 2 3 ££• i—““"" FOR MICROWAVE LOW-NOISE A M P LIF IE R S N-CHANNEL SCH O TTK Y-BA RRIER-G A TE T Y P E DESCRIPTION OUTLINE DRAWING Unit"millimeters inches
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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o-251aao-247aco-220abpowerso-20+10buz90afhv82mgf4919g-01mgf4919gmgf2407a-01buz80af16n60mgf1302-15ssp 50n062n10l
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