MGF2415 Search Results

MGF1502

Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION T he M G F 2 4 1 5 A , power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High power gain

MGF2415

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 1 5 A , power GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High o u tp ut power • High power gain

MGF2415A

Abstract: MGF2415
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 1 5 A , power GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High ou tp ut power • High power gain

MGF2415A

Abstract: MGF2430A
Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

MGF2415

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2415A, power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band ampli­ fiers. FEATURES • High output power P1dB = 27.5 dBm TYP. @ 14.5 GHz

564 fet

Abstract: MGF2415 MGF2415A ku Band Power GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 1 5 A , power GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High power gain

MGF2415

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

MGFC2415

Abstract: MGF2415A-11 MGF2415A 0/MGF2415A
Contextual Info: A Die_ MGFC2415 Package MG F2415A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2415 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power