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    MGF1323 Search Results

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    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


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    MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A PDF

    MGF1323

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


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    MGF1323 MGF1323, 13dBm 30rnA PDF

    MGF1425

    Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
    Contextual Info: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are


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    MGF1423/1425 MGF1323 MGF1923 MGFC1423, MGFC1425 MGF1323, MGF1423, MGF1425, MGF1923 MGF1425 MGFC1423 MGF1425-61-16 MGF1423 mitsubishi application mg series gaas MGF-C MGF1923-01 PDF