MGF1102
Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications. Unit: millimeters inches
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Contextual Info: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25
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mgf1102 |
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MGF1102
Abstract: N-Channel, Dual-Gate FET 251C dual-gate
Contextual Info: bSMSâST D017ÔE3 Sbö MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications.
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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mgf1102mgf1302mgf1303bmgfi323+14mgf1402bmgfi412bmgf1403bmgf1423bmgfi425bmgfi902bmgf1200mgf4310mgf1100mgf1412mgf4301mgf1304mgf7003mgf4305a
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MGF1202
Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
Contextual Info: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)
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mg15c4hm1mg15d4gm1mg15d4hm1mg15d6em1+13mg15g1am1450220abmg30n10e05typo-220abmg30n06elmgf1202mgf1402mgf1102mgf1305mg36n06emgf1302mg35n06e
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Contextual Info: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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mgf431od12ghzmgf4314dmgf4316d+9mgf4317dmgf4318dmgf4s17d-o1mgf43i4e45mgf1802mgf431mgf43180mitsubishi mgfmgf1902b-65
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