2SC3355 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES 1 * Low Noise and High Gain * High Power Gain  TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B

2SC3355

Abstract: transistor 2sc3355 and application PA33 marking PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS

2SC3355

Abstract: 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR
Contextual Info: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING

Contextual Info: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING

2sc3355

Abstract: NPN transistor to-92 2SC3355L 2sc3355g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92 „ ORDERING INFORMATION Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B

2SC536E

Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB

2Sc3355

Abstract: 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC3355 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER Package: TO-92 DESCRIPTION Low noise amplifier at VHF,UHF and CATV band. It has lange dynamic range and good current characteristic.

transistor NEC D 822 P

Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.

transistor NEC D 822 P

Abstract: transistor NEC B 617
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS in millimeters inches

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR H I GH FREQU EN CY LOW N OI SE AM PLI FI ER ̈ FEAT U RES * Low Noise and High Gain * High Power Gain 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R

2SC752G-TM

Abstract: 2sc945q 2SC3199Y 2SC3355 2SC383TM 2SC458B 2SC458C 2SC458D 2SC460 2SC460A
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC38BAT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB

transistor 2sc3355 and application

Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.

LB 122 transistor To-92

Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA

2SC460B

Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

dc iris driver

Abstract: CXA1310AQ dc iris drive cont QFP-32P-L01 2SC3355 2SK152 2SK300 32PIN PQFP32 sony linear ccd
Contextual Info: CXA1310AQ Single Chip Processing for CCD Monochrome Camera Description The CXA1310AQ is designed to perform the basic signal processing in CCD monochrome cameras with a single chip. This bipolar lC is most suitable for compact usage and low power consumption.

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call