2SC460B
Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y
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2SC458D
Abstract: 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC3199Y 2SC458B
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) 'c (W) (A) @Tc=25"< 'cBO ^CE V @ Ic & (mA) *^CE ^BE(SAT) 'c (V) Max @ (mA) c* \ 'c (mA) nf @ Freq c „ (MHz) (PF) Max CDIL
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2sc3199yo-92-12sc33552sc383tm+122sc38bath2sc7632sc90222sc458d2sc460b2sc945p2sc536g2sc536f2sc458c2sc752g-tm2sc536e2sc458b
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2SC536E
Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter
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enn676d2sb808/2sd10122sb8082sc536e+82sc536e,fsanyo 2sc536er18202sa602sd1012itr08383itr08384itr08385
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2SC536E
Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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ls 2027 audio ampecg transistor replacement guide book free2sb337transistor replacement guide+6980510s95102sb508c248507722n339bc149c
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2SC536E
Abstract: 2SC536F 2SC536G 2SC945P 2SC752G-TM 2SC945-P
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type V EBO (V) Mm ' (MAI e (V) (mA) ^CB Max Max oES ^CE hF£ !C X •'.Al ^CE ^CE(SAT) (V) (V) Max ^BE(SAT) : 0 (mA) Co, (pF Typ Max 'c
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2SC536E
Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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2SC752G-TM
Abstract: 2sc945q 2SC3199Y 2SC3355 2SC383TM 2SC458B 2SC458C 2SC458D 2SC460 2SC460A
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC38BAT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB
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2SD808
Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter
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2SD439E
Abstract: 2SC536E 2SC536E,F zkb transformer 2SD439 2SC536EF sirio 2SC536 sanyo 2SC536e b559
Contextual Info: SANYO SEMICONDUCTOR CORP lfiE D I ? cn ? G 7 t . □ □□ M 'i lS T~33- 2SD439 N P N / pnp Epitaxial P lan a r 2 00 9 A S ilic o n T ra n sisto rs Low Frequency Power Amp, Medium Speed Switching Applications 2SB559 372E Features . Large allowable collector dissipation and wide ASO.
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mc11s2sb5592sd439e2sc536e+82sc536e,fzkb transformer2sd4392sc536efsirio2sc536sanyo 2sc536eb559
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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