2SC383TM Search Results

2SC536E

Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB

2sc383TM

Contextual Info: T O SH IB A 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC383TM, 2SC388ATM TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of h/pE* ib .IM A X . MAXIMUM RATINGS (Ta = 2 5°C) 0.45

Contextual Info: TOSHIBA 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC383TM, 2SC388ATM Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . • High Gain : Gpe = 33dB Typ. (f = 45MHz) Good Linearity of hpg. MAXIMUM RATINGS (Ta = 25°C) SYMBOL

2SC383TM

Abstract: 2SC388ATM 2SC388A 2sc388 K1568
Contextual Info: TOSHIBA 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC383TM, 2SC388ATM Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . • High Gain : Gpe = 33dB Typ. (f = 45MHz) Good Linearity of hEE. MAXIMUM RATINGS (Ta = 25°C) SYMBOL

2SC383TM

Abstract: 2SC388ATM 2SC388A S100 transistor 025-12S
Contextual Info: TO SH IB A 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 8 3 T M , TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hjrE ' 2 S C 3 8 8 A T M U nit in mm MAXIMUM RATINGS (Ta = 25°C)

2SC752G-TM

Abstract: 2sc945q 2SC3199Y 2SC3355 2SC383TM 2SC458B 2SC458C 2SC458D 2SC460 2SC460A
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC38BAT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

2SC460B

Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y

2SC458D

Abstract: 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC3199Y 2SC458B
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) 'c (W) (A) @Tc=25"< 'cBO ^CE V @ Ic & (mA) *^CE ^BE(SAT) 'c (V) Max @ (mA) c* \ 'c (mA) nf @ Freq c „ (MHz) (PF) Max CDIL

2SC137

Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135

2SC1634

Abstract: 2SC510 TM 1298 2SC2258 2SC828 2SC4455 2SC3419 1279S 2SC752G-TM 2SC2204
Contextual Info: 110 - m tt « 2SC 1267 2SC 1271 2SC 1272 2SC 1273 2SC 1274 2SC 1276 2 SC 1277 2 SC 1278 2SC 1278S 2SC 1279S 2SC 1280 2SC 12 80AS 2SC 1280S 2SC 1281 2SC1236 2SC1236 / a s s a a a a a a a a a a * s v h n # 2SC641 K 2SC752( G ) TM 2SC3581 2SC2362K 2SC1515(K)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SC710

Abstract: 2SC1815 2SC696 2SC2320 2SC1398 2sc1740 2SC380TM 2SC945 2SC2410 2SC1687
Contextual Info: - 88 - s « Type No. tt 2SC 439 H * 2SC 440 = m * 2SC 441 * 2SC 442 * 2SC 447 * 2SC 448 £ ^ H $ 2SC 448 — * 2SC 450 h * 2SC 451 * 2SC 452 h m m m * 2SC 453 H Ü / h •<’ ' *£ « NEC m h MITSUBISHI □ — A ROHM 2SC461 2SC1687 2SC2410 2SC461 2SC1687

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2SC1855

Abstract: 2SC945 2sc2805 2SC2058 2SC2999 2SC1275 2SC380Y 2SC2348 2sc2655 2SC1740
Contextual Info: - 86 - S! tt € Type No. £ Manuf. * 2SC 373 ^ * 2SC 374 * SC S SC =£ 2SC 375 M 2E * 2SC 376 SC * 2SC 377 ^ j = * SANYO 2SC4641 2SC2999 SC 3Ê TOSHIBA e m NEC ÏL HITACHI H dr S FUJITSU fé T MATSUSHITA □ MITSUBISHI — A ROHM 2SC1815 2SC945 2SC828 2SC1740

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or